US4680963A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor flow velocity sensor
Assignee: Toyota Central R&D Labs Inc
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Filing: 1986-01-21
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Granted: 1987-07-21
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Expires: 2006-01-21
Abstract
Abstract A semiconductor flow velocity sensor having a semiconductor substrate and an electrical heating unit arranged on the substrate. The sensor located in the fluid flow to be measured can electrically detect the radiation from the heating unit which varies depending on the velocity of fluid flow. Thermal insulator is provided between the semiconductor (silicon) substrate and the heating unit so as to thermally shield the substrate from the heating unit. On the thermally isolated area of the substrate is provided an external sensor circuit so as to enable to increase the integration of the sensor.
Inventors
- 👤 Osamu Tabata
- 👤 Hazime Inagaki
- 👤 Tomoyuki Kitano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 00:07
CPC Classifications
G; G01; G01F; G01F1/00; G01F1/68; G01F1/684; G01F1/6845; G01P; G01P5/00; G01P5/10; G01P5/12
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
193 words
A semiconductor flow velocity sensor comprising: a semiconductor substrate; a thermal insulation means which is formed by selectively making a portion of said semiconductor substrate porous and oxidizing said portion to form an oxidized porous silicon layer in such a manner that the surface of said thermal insulation means is exposed substantially flush with the surface of said semiconductor substrate; an electrically energized heating unit formed of a part of the inner portion of said thermal insulation means, which has selectively been left when forming said thermal insulation means, in such a manner that the surface of said electrically energized heating unit is exposed substantially flush with the surface of said semiconductor substrate; and peripheral sensor circuit means provided on said semiconductor substrate at the portion at which the heat transfer from said electrically energized heating unit is prevented by said thermal insulation means; said surface of said semiconductor substrate which is provided with said electrically energized heating unit and said thermal insulation means being made substantially flat, thereby enabling stable detection of flow velocity over a long period of time without disturbing the flow of a fluid while being protected against contamination.
Claim 2
Dependent Claim
193 words
A semiconductor flow velocity sensor comprising: a semiconductor substrate; a thermal insulation means which is formed by selectively making a portion of said semiconductor substrate porous and oxidizing said portion to form an oxidized porous silicon layer in such a manner that the surface of said thermal insulation means is exposed substantially flush with the surface of said semiconductor substrate; an electrically energized heating unit formed of a part of the inner portion of said thermal insulation means, which has selectively been left when forming said thermal insulation means, in such a manner that the surface of said electrically energized heating unit is exposed substantially flush with the surface of said semiconductor substrate; and peripheral sensor circuit means provided on said semiconductor substrate at the portion at which the heat transfer from said electrically energized heating unit is prevented by said thermal insulation means; said surface of said semiconductor substrate which is provided with said electrically energized heating unit and said thermal insulation means being made substantially flat, thereby enabling stable detection of flow velocity over a long period of time without disturbing the flow of a fluid while being protected against contamination.
Claim 3
Dependent Claim
38 words
A semiconductor flow velocity sensor as defined in claim 1 wherein said semiconductor substrate is formed of one selected from P- and N-type silicon and wherein said thermal insulation means is formed of an oxidized porous silicon layer.
Claim 4
Dependent Claim
41 words
A semiconductor flow velocity sensor as defined in claim 2 wherein the surface of said semiconductor substrate is covered with a protective insulation layer, whereby measurement of flow velocity can be made even in the flow of an electrically conductive fluid.
Claim 5
Dependent Claim
64 words
A semiconductor flow velocity sensor as defined in claim 2 wherein said thermal insulation means is formed by selectively processing a portion of a silicon semiconductor substrate to make said portion porous and then oxidizing said portion to form an oxidized porous silicon layer thereon and wherein said heating unit is formed by leaving a portion of said substrate within said thermal insulation means.
Claim 6
Dependent Claim
20 words
A semiconductor flow velocity sensor as defined in claim 4 wherein said heating unit is then subjected to impurity diffusion.
Claim 7
Dependent Claim
18 words
A semiconductor flow velocity sensor as defined in claim 2, wherein said heating unit is a film-like resistor.
Claim 8
Dependent Claim
28 words
A semiconductor flow velocity sensor as defined in claim 1, wherein a portion of said semiconductor susbstrate under said thermally insulation means is removed for efficient heat radiation.
Claim 9
Dependent Claim
17 words
A semiconductor flow velocity sensor as defined in claim 7, wherein said portion is removed by etching.
Claim 10
Dependent Claim
22 words
A semiconductor flow velocity sensor as defined in claim 1 wherein said peripheral sensor circuit means is a fluid temperature compensating circuit.
Claim 11
Dependent Claim
56 words
A semiconductor flow velocity sensor as defined in claim 9 wherein said fluid temperature compensating circuit is formed of a silicon resistor, the resistance of said silicon resistor being sufficiently higher than that of said heating unit, and further the resistance temperature coefficient of said silicon resistor being substantially equal to that of said heating unit.
Claim 12
Dependent Claim
35 words
A semiconductor flow velocity sensor as defined in claim 1 wherein said peripheral sensor circuit means includes a drive circuit for said heating unit, a sensor output linearizing circuit and a fluid pressure compensating circuit.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-07-20 | 1991-01-19 | 1991-07-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-07-20 | 1995-01-19 | 1995-07-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-07-20 | 1999-01-19 | 1999-07-21 | $7700.00 | Window Closed / Lapsed |