Process for manufacturing isolated semi conductor components in a semi conductor wafer

Claim 2

A process for manufacturing isolated semiconductor components on a semiconductor wafer of the type used in bipolar technology comprising a substrate of a first type of conductivity on which is formed an epitaxied layer of a second type of conductivity, this process comprising the following steps: partially hollowing out or recessing the epitaxied layer in zones of chosen perimeter defined by means of a first insulating masking layer; depositing a second insulating layer on the epitaxied layer; opening locally a window in said second insulating layer at the bottom of said recess zone; depositing polycrystalline silicon in said recessed zone; epitaxying said polycrystalline silicon from its contact zone with the underlying silicon at the position of said window; locally oxidizing said epitaxied polycrystalline silicon layer over the whole of its thickness opposite said window; and forming the desired components in said epitaxied zones.

Claim 3

The process for manufacturing isolated semi conductor components on a semiconductor wafer of the type used in bipolar technology comprising a substrate of a first type of conductivity on which is formed an epitaxied layer of the second type of conductivity, buried layers of the second type of conductivity being possibly provided in chosen positions at the interface between the substrate and the epitaxied layer, this process comprising the following steps: partially hollowing out or recessing said epitaxied layer in zones defined by means of appropriate masks. depositing a silicon nitride layer on the epitaxied layer, masking the bottom of the recessed zones except for the periphery of these zone with resin mask, irradiating with ions conferring distinct etching speeds on the irradiated and non irradiated nitride layer portions, said irradiation acting over a depth at most equal to that of the nitride layer, proceeding with chemical etching of the silicon nitride layer so as to remove a thickness corresponding to that of the nitride layer so that, at the bottom of the recessed zones, the masked part of the second nitride layer is not affected, whereas at the periphery the underlying semi-conductor is bared and so that, on the sides of the recessed zones, a thinned portion of said nitride layer remains, oxidizing the visible silicon at least until the boundary between the substrate and the epitaxied layer is reached, locally opening the nitride layer in the form of a window at the bottom of said recessed zones, depositing polycrystalline silicon from its contact zone with the underlying silicon at the position of said windows, epitaxying said polycrystalline silicon from its contact zone with the underlying silicon at the position of said windows, and forming the desired components in said epitaxied zones.

Claim 4

The process for manufacturing isolated semi conductor components on a semiconductor wafer of the type used in bipolar technology comprising a substrate of a first type of conductivity on which is formed an epitaxied layer of the second type of conductivity, buried layers of the second type of conductivity being possibly provided in chosen positions at the interface between the substrate and the epitaxied layer, this process comprising the following steps: partially hollowing out or recessing said epitaxied layer in zones defined by means of appropriate masks. depositing a silicon nitride layer on the epitaxied layer, masking the bottom of the recessed zones except for the periphery of these zone with resin mask, irradiating with ions conferring distinct etching speeds on the irradiated and non irradiated nitride layer portions, said irradiation acting over a depth at most equal to that of the nitride layer, proceeding with chemical etching of the silicon nitride layer so as to remove a thickness corresponding to that of the nitride layer so that, at the bottom of the recessed zones, the masked part of the second nitride layer is not affected, whereas at the periphery the underlying semi-conductor is bared and so that, on the sides of the recessed zones, a thinned portion of said nitride layer remains, oxidizing the visible silicon at least until the boundary between the substrate and the epitaxied layer is reached, locally opening the nitride layer in the form of a window at the bottom of said recessed zones, depositing polycrystalline silicon from its contact zone with the underlying silicon at the position of said windows, epitaxying said polycrystalline silicon from its contact zone with the underlying silicon at the position of said windows, and forming the desired components in said epitaxied zones.

Claim 5

The process as claimed in claim 2, further comprising, after the epitaxying step, the following step; locally oxidizing said epitaxied polycrystalline silicon layer over the whole of its thickness opposite said windows.