Method and apparatus for controlling thickness of a layer of an optical data storage device by measuring an optical property of the layer

Claim 1

A method of manufacturing an optical data storage device having a reversible, chalcogenide, optical data storage medium layer comprising tellurium and a cross-linking agent, said layer being encapsulated between dielectric layers and supported by a device substrate, said optical data storage device being manufactured by a method comprising the steps of: (a) providing rotational motion to the device substrate; (b) providing precursor of the dielectric from a source thereof; (c) depositing the dielectric precursor to form a first dielectric film thereon; (d) periodically measuring an optical property of the first dielectric film whereby to substantially continuously monitor the optical property of the first dielectric film; (e) comparing the measured optical property of the first dielectric film to a predetermined value thereof; (f) terminating deposition of the dielectric material and the build-up of the first dielectric film when the measured value of the optical property of the first dielectric film substantially equals the predetermined value thereof; (g) providing a chalcogen and cross-linking agent precursor of the chalcogenide optical data storage medium layer from a source thereof; (h) depositing the chalcogen and cross-linking agent atop the first dielectric film to form a layer of reversible chalcogenide optical data storage medium material atop the first dielectric film; (i) periodically measuring an optical property of the layer of reversible chalcogenide optical data storage medium material atop the first dielectric film whereby to substantially continuously monitor the optical property of the reversible chalcogenide optical data storage medium material; (j) comparing the measured optical property of the layer of reversible chalcogenide optical data storage medium material to a predetermined value thereof; (k) terminating deposition of the reversible chalcogenide optical data storage medium material and the build-up of the layer when the measured value of the optical property of the layer substantially equals the predetermined value thereof; (l) resuming deposition of the dielectric precursor to form a second dielectric film atop the reversible chalcogenide optical data storage medium material layer; (m) periodically measuring an optical property of the second dielectric film whereby to substantially continuously monitor the optical property of the second dielectric film; (n) comparing the measured optical property of the second dielectric film to a predetermined value thereof; and (o) terminating deposition of the dielectric material and the build-up of the second dielectric film when the measured value of the optical property of the second dielectric film substantially equals the predetermined value thereof.

Claim 2

A method of manufacturing an optical data storage device having a reversible, chalcogenide, optical data storage medium layer comprising tellurium and a cross-linking agent, said layer being encapsulated between dielectric layers and supported by a device substrate, said optical data storage device being manufactured by a method comprising the steps of: (a) providing rotational motion to the device substrate; (b) providing precursor of the dielectric from a source thereof; (c) depositing the dielectric precursor to form a first dielectric film thereon; (d) periodically measuring an optical property of the first dielectric film whereby to substantially continuously monitor the optical property of the first dielectric film; (e) comparing the measured optical property of the first dielectric film to a predetermined value thereof; (f) terminating deposition of the dielectric material and the build-up of the first dielectric film when the measured value of the optical property of the first dielectric film substantially equals the predetermined value thereof; (g) providing a chalcogen and cross-linking agent precursor of the chalcogenide optical data storage medium layer from a source thereof; (h) depositing the chalcogen and cross-linking agent atop the first dielectric film to form a layer of reversible chalcogenide optical data storage medium material atop the first dielectric film; (i) periodically measuring an optical property of the layer of reversible chalcogenide optical data storage medium material atop the first dielectric film whereby to substantially continuously monitor the optical property of the reversible chalcogenide optical data storage medium material; (j) comparing the measured optical property of the layer of reversible chalcogenide optical data storage medium material to a predetermined value thereof; (k) terminating deposition of the reversible chalcogenide optical data storage medium material and the build-up of the layer when the measured value of the optical property of the layer substantially equals the predetermined value thereof; (l) resuming deposition of the dielectric precursor to form a second dielectric film atop the reversible chalcogenide optical data storage medium material layer; (m) periodically measuring an optical property of the second dielectric film whereby to substantially continuously monitor the optical property of the second dielectric film; (n) comparing the measured optical property of the second dielectric film to a predetermined value thereof; and (o) terminating deposition of the dielectric material and the build-up of the second dielectric film when the measured value of the optical property of the second dielectric film substantially equals the predetermined value thereof.

Claim 9

A method of manufacturing an optical data storage device having a reversible, germanium telluride, optical data storage medium layer, said germanium telluride layer being encapsulated between germanium oxide dielectric layers and supported by a device substrate, said optical data storage device being manufactured by a method comprising the steps of: (a) providing rotational motion to the device substrate; (b) providing germanium oxide vapor from a source thereof; (c) depositing the germanium oxide to form a first germanium oxide dielectric film thereon; (d) periodically measuring the reflectivity of the first germanium oxide dielectric film whereby to substantially continuously monitor the reflectivity thereof; (e) comparing the measured reflectivity of the first dielectric film to a predetermined value thereof; (f) terminating deposition of the germanium oxide and the build-up of the first germanium oxide dielectric film when the measured value of the reflectivity of the first germanium oxide dielectric film substantially equals the predetermined value thereof; (g) providing vapor precursors of the germanium telluride optical data storage medium layer from sources thereof; (h) depositing germanium and tellurium atop the first germanium oxide dielectric film to form a layer of germanium telluride reversible, phase change optical data storage medium material atop the first germanium oxide dielectric film; (i) periodically measuring the reflectivity of the layer of germanium telluride reversible, phase change optical data storage medium material atop the first germanium oxide dielectric film whereby to substantially continuously monitor the reflectivity of the germainium telluride, reversible phase change, optical data storage medium material; (j) comparing the measured reflectivity of the layer of germanium telluride, reversible, optical data storage medium material to the minimum value thereof; (k) terminating deposition of the reversible chalcogenide optical data storage medium material layer and the build-up of the layer when the measured value of the reflectivity of the layer substantially equals the minimum value thereof; (l) resuming deposition of the germanium oxide precursor to form a germanium oxide second dielectric film atop the germanium telluride, reversible optical data storage medium material layer; (m) periodically measuring the reflectivity of the second germanium oxide dielectric film whereby to substantially continuously monitor the feflectivity of the second germanium oxide dielectric film; (n) comparing the reflectivity of the second germanium oxide dielectric film to a predetermined value thereof; and (o) terminating deposition of the germanium oxide dielectric material and the build-up of the second germanium oxide dielectric film when the measured value of the optical property of the second dielectric film substantially equals the predetermined value thereof.

Claim 10

A method of manufacturing an optical data storage device having a reversible, germanium telluride, optical data storage medium layer, said germanium telluride layer being encapsulated between germanium oxide dielectric layers and supported by a device substrate, said optical data storage device being manufactured by a method comprising the steps of: (a) providing rotational motion to the device substrate; (b) providing germanium oxide vapor from a source thereof; (c) depositing the germanium oxide to form a first germanium oxide dielectric film thereon; (d) periodically measuring the reflectivity of the first germanium oxide dielectric film whereby to substantially continuously monitor the reflectivity thereof; (e) comparing the measured reflectivity of the first dielectric film to a predetermined value thereof; (f) terminating deposition of the germanium oxide and the build-up of the first germanium oxide dielectric film when the measured value of the reflectivity of the first germanium oxide dielectric film substantially equals the predetermined value thereof; (g) providing vapor precursors of the germanium telluride optical data storage medium layer from sources thereof; (h) depositing germanium and tellurium atop the first germanium oxide dielectric film to form a layer of germanium telluride reversible, phase change optical data storage medium material atop the first germanium oxide dielectric film; (i) periodically measuring the reflectivity of the layer of germanium telluride reversible, phase change optical data storage medium material atop the first germanium oxide dielectric film whereby to substantially continuously monitor the reflectivity of the germainium telluride, reversible phase change, optical data storage medium material; (j) comparing the measured reflectivity of the layer of germanium telluride, reversible, optical data storage medium material to the minimum value thereof; (k) terminating deposition of the reversible chalcogenide optical data storage medium material layer and the build-up of the layer when the measured value of the reflectivity of the layer substantially equals the minimum value thereof; (l) resuming deposition of the germanium oxide precursor to form a germanium oxide second dielectric film atop the germanium telluride, reversible optical data storage medium material layer; (m) periodically measuring the reflectivity of the second germanium oxide dielectric film whereby to substantially continuously monitor the feflectivity of the second germanium oxide dielectric film; (n) comparing the reflectivity of the second germanium oxide dielectric film to a predetermined value thereof; and (o) terminating deposition of the germanium oxide dielectric material and the build-up of the second germanium oxide dielectric film when the measured value of the optical property of the second dielectric film substantially equals the predetermined value thereof.

Claim 11

A system for manufacturing an optical data storage device, and device having a reversible, chalcogenide, optical data storage medium layer comprising tellurium and a cross-linking agent, said layer being encapsulated between dielectric layers and supported by a substrate, said manufacturing system comprising: (a) means for supporting the optical data storage device; (b) source means for controllably providing (i) telluride optical data storage medium layer precursor vapor and (ii) dielectric layer precursor vapor for deposit in a condensed state to form the optical data storage device; (c) means for providing rotational motion to the optical data storage device with respect to the source means; (d) means for substantially continuously measuring the reflectivities of the condensed deposits of dielectric encapsulating layers and optical data storage medium layer on the optical storage device; and (e) means for (1) comparing the measured reflectivity of a layer to a predetermined value thereof, and (2) controlling the evolution of vapor from the source means with respect thereto whereby to control the thickness of the layer.

Claim 12

A system for manufacturing an optical data storage device, and device having a reversible, chalcogenide, optical data storage medium layer comprising tellurium and a cross-linking agent, said layer being encapsulated between dielectric layers and supported by a substrate, said manufacturing system comprising: (a) means for supporting the optical data storage device; (b) source means for controllably providing (i) telluride optical data storage medium layer precursor vapor and (ii) dielectric layer precursor vapor for deposit in a condensed state to form the optical data storage device; (c) means for providing rotational motion to the optical data storage device with respect to the source means; (d) means for substantially continuously measuring the reflectivities of the condensed deposits of dielectric encapsulating layers and optical data storage medium layer on the optical storage device; and (e) means for (1) comparing the measured reflectivity of a layer to a predetermined value thereof, and (2) controlling the evolution of vapor from the source means with respect thereto whereby to control the thickness of the layer.