US4675887A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state imaging device and method with row-by-row charge transfer
Assignee: Hitachi Ltd
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Filing: 1985-05-21
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Granted: 1987-06-23
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Expires: 2005-05-21
Abstract
Abstract A solid stage imaging device, in which photodiodes each capable of converting incident light into a electric charge and accumulating the electric charge are arranged regularly in a matrix, e.g. in horizontal and vertical directions, and electric charges of the photodiodes are sent to the outside by means of CCD's, includes a scanning circuit which scans switching MOS transistors for transferring the electric charges of the photodiodes to vertical CCD's, in a vertical direction so that switching MOS transistors in a row parallel to a horizontal direction can be driven independently of switching MOS transistors in another row. When the solid state imaging device is driven, an operation for transferring an electric charge in each vertical CCD and an operation for driving switching MOS transistors in the next row with the aid of the scanning circuit are alternately performed, to reduce the amount of smear and to increase the dynamic range of each vertical CCD, without increasing the number of CCD's used.
Inventors
- 👤 Toshiyuki Akiyama
- 👤 Norio Koike
- 👤 Kenji Ito
- 👤 Takeshi Ogino
- 👤 Shuusaku Nagahara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:50
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/221; H04; H04N; H04N25/00; H04N25/60; H04N25/62; H04N25/625; H10D62/00; H10D62/10; H10D62/17; H10D62/177
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
227 words
A solid state imaging device formed in a semiconductor substrate, comprising: a plurality of photoelectric conversion elements formed in a surface of said semiconductor substrate for storing photoexcited charge carriers, and arranged regularly in a twodimensional matrix of rows and columns respectively aligned parallel to horizontal and vertical directions; a plurality of vertical charge transfer means for successively transferring charge carrier packets in the vertical direction, said vertical charge transfer means being respectively associated with the columns of said matrix; a plurality of switching means respectively associated with said plurality of photoelectric conversion elements for controllably transferring the photoexcited charge stored in said photoelectric conversion elements to associated locations in said plurality of vertical charge transfer means; at least one horizontal charge transfer means coupled to said plurality of vertical charge transfer means and including means for receiving the charge carriers from said plurality of vertical charge transfer means, for transferring said charge carrier packets in the horizontal direction and for outputting said charge carrier packets; and scanning means for successively driving said plurality of switching means in the vertical direction so as to successively transfer the charge carriers in the photoelectric conversion elements to the associated vertical charge transfer means at such timing that the charge carrier packets from the photoelectric conversion elements are separated with gaps and successively transferred in the vertical charge transfer means.
Claim 2
Dependent Claim
227 words
A solid state imaging device formed in a semiconductor substrate, comprising: a plurality of photoelectric conversion elements formed in a surface of said semiconductor substrate for storing photoexcited charge carriers, and arranged regularly in a twodimensional matrix of rows and columns respectively aligned parallel to horizontal and vertical directions; a plurality of vertical charge transfer means for successively transferring charge carrier packets in the vertical direction, said vertical charge transfer means being respectively associated with the columns of said matrix; a plurality of switching means respectively associated with said plurality of photoelectric conversion elements for controllably transferring the photoexcited charge stored in said photoelectric conversion elements to associated locations in said plurality of vertical charge transfer means; at least one horizontal charge transfer means coupled to said plurality of vertical charge transfer means and including means for receiving the charge carriers from said plurality of vertical charge transfer means, for transferring said charge carrier packets in the horizontal direction and for outputting said charge carrier packets; and scanning means for successively driving said plurality of switching means in the vertical direction so as to successively transfer the charge carriers in the photoelectric conversion elements to the associated vertical charge transfer means at such timing that the charge carrier packets from the photoelectric conversion elements are separated with gaps and successively transferred in the vertical charge transfer means.
Claim 3
Dependent Claim
40 words
A solid state imaging device according to claim 1, wherein a wiring pattern for driving said plurality of switching means is formed in a layer which exists above a wiring pattern for driving said plurality of vertical charge transfer means.
Claim 4
Dependent Claim
19 words
A solid state imaging device according to claim 1, wherein at least two horizontal charge transfer means are provided.
Claim 5
Dependent Claim
52 words
A solid state imaging device according to claim 1, further comprising a switching transistor formed of an MOS field effect transistor disposed between said vertical charge transfer means and said horizontal charge transfer means for draining additional charge carriers disposed between said charge carrier packets which additional charge carriers correspond to noise.
Claim 6
Dependent Claim
267 words
A solid state imaging device formed in a semiconductor substrate, comprising: a plurality of photoelectric conversion elements formed in a surface of said semiconductor substrate for storing photoexcited charge carriers, and arranged regularly in a two-dimensional matrix of rows and columns respectively aligned parallel to horizontal and vertical directions; a plurality of vertical charge transfer means for successively transferring charge carrier packets in the vertical direction, said vertical charge transfer means being respectively associated with the columns of said matrix; a plurality of switching means respectively associated with said plurality of photoelectric conversion elements for controllably transferring the photoexcited charge carriers stored in said photoelectric conversion elements to associated locations in said plurality of vertical charge transfer means; at least one horizontal charge transfer means coupled to said plurality of vertical charge transfer means and including means for receiving the charge carriers from said plurality of vertical charge transfer means, for transferring said charge carrier packets in the horizontal direction and for outputting said charge carrier packets; and scanning means for successively driving said plurality of switching means in the vertical direction so as to successively transfer the charge carriers in the photoelectric conversion elements to the associated vertical charge transfer means at such timing that the charge carrier packets from the photoelectric conversion elements are separated with gaps and successively transferred in the vertical charge transfer means, said method comprising the steps of: specifying a row by said scanning means; and transferring a charge carrier packet in each vertical charge transfer means by at least one stage in a period, during which said row is specified.
Claim 7
Dependent Claim
267 words
A solid state imaging device formed in a semiconductor substrate, comprising: a plurality of photoelectric conversion elements formed in a surface of said semiconductor substrate for storing photoexcited charge carriers, and arranged regularly in a two-dimensional matrix of rows and columns respectively aligned parallel to horizontal and vertical directions; a plurality of vertical charge transfer means for successively transferring charge carrier packets in the vertical direction, said vertical charge transfer means being respectively associated with the columns of said matrix; a plurality of switching means respectively associated with said plurality of photoelectric conversion elements for controllably transferring the photoexcited charge carriers stored in said photoelectric conversion elements to associated locations in said plurality of vertical charge transfer means; at least one horizontal charge transfer means coupled to said plurality of vertical charge transfer means and including means for receiving the charge carriers from said plurality of vertical charge transfer means, for transferring said charge carrier packets in the horizontal direction and for outputting said charge carrier packets; and scanning means for successively driving said plurality of switching means in the vertical direction so as to successively transfer the charge carriers in the photoelectric conversion elements to the associated vertical charge transfer means at such timing that the charge carrier packets from the photoelectric conversion elements are separated with gaps and successively transferred in the vertical charge transfer means, said method comprising the steps of: specifying a row by said scanning means; and transferring a charge carrier packet in each vertical charge transfer means by at least one stage in a period, during which said row is specified.
Claim 8
Dependent Claim
44 words
A driving method according to claim 5, wherein a charge carrier packet in each vertical charge transfer means is transferred in a direction from bottom to top, and said scanning means scans said plurality of switching means in a direction from top to bottom.
Claim 9
Dependent Claim
44 words
A driving method according to claim 5, wherein a charge carrier packet in each vertical charge transfer means is transferred in a direction from top to bottom, and said scanning means scans said plurality of switching means in a direction from top to bottom.
Claim 10
Dependent Claim
41 words
A driving method according to claim 5, wherein a charge carrier packet and additional charge carriers that are disposed between said charge carrier packets and which correspond to noise are transferred in each vertical charge transfer means separately from each other.
Claim 11
Dependent Claim
37 words
A driving method according to claim 8, wherein said scanning means scans said plurality of switching means in such a manner that switching means in two adjacent rows parallel to a horizontal direction can be simultaneously driven.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-06-22 | 1990-12-22 | 1991-06-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-06-22 | 1994-12-22 | 1995-06-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-06-22 | 1998-12-22 | 1999-06-23 | $7700.00 | Window Closed / Lapsed |