US4673629A
Expired / Lapsed
US
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Photoreceptor having amorphous silicon layers
Assignee: Konica Minolta Inc
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Filing: 1985-12-26
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Granted: 1987-06-16
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Expires: 2005-12-26
Abstract
Abstract A photoreceptor comprising a support bearing thereon a charge transport layer comprising one selected from the group consisting of a--SiC:H, a--SiC:F and a--SiC:H:F, a charge generating layer comprising one selected from the group consisting of a--SiH, a--SiF and a SiH:F, an a--Si type surface modifying layer containing one selected from the group consisting of N, O and C, and an a--Si type interlayer containing at least one selected from the group consisting of N, O and C, the content of said at least one of N, O and C in said interlayer being less than in said surface modifying layer, said interlayer being interposed between said charge generating layer and said surface modifying layer.
Inventors
- 👤 Toshinori Yamazaki
- 👤 Tatsuo Nakanishi
- 👤 Yuji Marukawa
- 👤 Shigeki Takenouchi
- 👤 Hiroyuki Nomori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:17
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/0825; G03G5/08235
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
105 words
A photoreceptor comprising a support bearing thereon a charge transport layer comprising one selected from the group consisting of a-SiC:H, a-SiC:F and a-SiC:H:F, a charge generating layer comprising one selected from the group consisting of a-SiH, a-SiF and a SiH:F, an a-Si type surface modifying layer containing one selected from the group consisting of N, O and C, and an a-Si type consisting of N, O and C, the content of said at least one of N, O and C in said interlayer being less than in said surface modifying layer, said interlayer being interposed between said charge generating layer and said surface modifying layer.
Claim 2
Dependent Claim
105 words
A photoreceptor comprising a support bearing thereon a charge transport layer comprising one selected from the group consisting of a-SiC:H, a-SiC:F and a-SiC:H:F, a charge generating layer comprising one selected from the group consisting of a-SiH, a-SiF and a SiH:F, an a-Si type surface modifying layer containing one selected from the group consisting of N, O and C, and an a-Si type consisting of N, O and C, the content of said at least one of N, O and C in said interlayer being less than in said surface modifying layer, said interlayer being interposed between said charge generating layer and said surface modifying layer.
Claim 3
Dependent Claim
24 words
The photoreceptor as claimed in claim 1, wherein said surface modifying layer comprises one selected from the group consisting of a-SiC:H, a-SiC:F and a-SiC:H:F.
Claim 4
Dependent Claim
22 words
The photoreceptor as claimed in claim 2, wherein said interlayer comprises one selected from the group consisting of a-SiC:H, a-SiC:F and a-SiC:H:F.
Claim 5
Dependent Claim
50 words
The photoreceptor as claimed in claim 3, wherein said surface modifying layer contains C in an amount of not less than 50 atomic% based on the total number of silicon and carbon atoms being 100 atomic%, and said interlayer contains C in an amount of not more than 50 atomic%.
Claim 6
Dependent Claim
24 words
The photoreceptor as claimed in claim 1, wherein said interlayer contains at least two selected from the group consisting of C, N and O.
Claim 7
Dependent Claim
42 words
The photoreceptor as claimed in claim 2, wherein the C content of said surface modifying layer is substantially more than in said interlayer and each of said layers contains at least two selected from the group consisting of C, N and O.
Claim 8
Dependent Claim
35 words
The photoreceptor as claimed in claim 6, wherein the C content of said surface modifying layer is from 50 to 80 atomic% based on the total number of Si and C atoms being 100 atomic%.
Claim 9
Dependent Claim
24 words
The photoreceptor as claimed in claim 1, wherein said surface modifying layer comprises one selected from the group consisting of a-SiN:H, a-SiN:F and a-SiN:H:F.
Claim 10
Dependent Claim
31 words
The photoreceptor as claimed in claim 8, wherein the N content of said surface modifying layer is substantially more than the total content of C, N and O in said interlayer.
Claim 11
Dependent Claim
35 words
The photoreceptor as claimed in claim 8, wherein the N content of said surface modifying layer is from 50 to 80 atomic% based on the total number of Si and N atoms being 100 atomic%.
Claim 12
Dependent Claim
24 words
The photoreceptor as claimed in claim 1, wherein said surface modifying layer comprises one selected from the group consisting of a-SiO:H, a-SiO:F and a-SiO:H:F.
Claim 13
Dependent Claim
30 words
The photoreceptor as claimed in claim 1, wherein the O content said surface modifying layer is substantially more than the total content of C, N and O in said interlayer.
Claim 14
Dependent Claim
35 words
The photoreceptor as claimed in claim 12, wherein the O content of said surface modifying layer is from 50 to 80 atomic% based on the total number of Si and O atoms being 100 atomic%.
Claim 15
Dependent Claim
21 words
The photoreceptor as claimed in claim 1, wherein the thickness of said surface modifying layer is from 400 to 5000 Å.
Claim 16
Dependent Claim
19 words
The photoreceptor as claimed in claim 1, wherein the thickness of said interlayer is not more than 5000 Å.
Claim 17
Dependent Claim
21 words
The photoreceptor as claimed in claim 1, wherein the thickness of said charge generating layer is from 4 to 8 μm.
Claim 18
Dependent Claim
21 words
The photoreceptor as claimed in claim 16, wherein the thickness of said charge generating layer is from 5 to 7 μm.
Claim 19
Dependent Claim
35 words
The photoreceptor as claimed in claim 1, wherein the C content of said charge transport layer is from 5 to 30 atomic% based on the total number of Si and C atoms being 100 atomic%.
Claim 20
Dependent Claim
21 words
The photoreceptor as claimed in claim 18, wherein the content in said charge transport layer is from 10 to 20 atomic%.
Claim 21
Dependent Claim
21 words
The photoreceptor as claimed in claim 1, wherein the thickness of said charge transport layer is from 10 to 30 μm.
Claim 22
Dependent Claim
34 words
The photoreceptor as claimed in claim 1, wherein a charge blocking layer comprising one selected from the group consisting of a-SiC:H, a-SiC:F and a-SiC:H:F is interposed between said charge transport layer and said support.
Claim 23
Dependent Claim
31 words
The photoreceptor as claimed in claim 21, wherein the C content of said charge blocking layer is from 5 to 30 atomic% and thickness is from 500 Å to 2 μm.
Claim 24
Dependent Claim
20 words
The photoreceptor as claimed in claim 22, wherein said charge blocking layer is heavily doped with a IIIa group element.
Claim 25
Dependent Claim
19 words
The photoreceptor as claimed in claim 1, wherein said charge transport layer is doped with a IIIa group element.
Claim 26
Dependent Claim
15 words
The photoreceptor as claimed in claim 1, wherein a plurality of said interlayers are provided.
Claim 27
Dependent Claim
120 words
The photoreceptor as claimed in claim 7, wherein the thickness of said surface modifying layer is from 400 to 5000 Å, the thickness of said interlayer is not more than 5000 Å, the thickness of said charge generating layer is from 5 to 7 μm, said charge transport layer contains from 10 to 20 atomic % or C based on the total number of Si and C atoms being 100 atomic %, the thickness of said charge transport layer is from 10 to 30 μm, and a charge blocking layer from 500 Å to 2 μm thick and comprising one selected from the group consisting of a-SiC:H, a-SiC:F and a-SiC:H:F is interposed between said charge transport layer and said support.
Claim 28
Dependent Claim
120 words
The photoreceptor as claimed in claim 10, wherein the thickness of said surface modifying layer is from 400 to 5000 Å, the thickness of said interlayer is not more than 5000 Å, the thickness of said charge generating layer is from 5 to 7 μm, said charge transport layer contains from 10 to 20 atomic % of C based on the total number of Si and C atoms being 100 atomic %, the thickness of said charge transport layer is from 10 to 30 μm, and a charge blocking layer from 500 Å to 2 μm thick and comprising one selected from the group consisting of a-SiC:H, a-SiC:F and a-SiC:H:F is interposed between said charge transport layer and said support.
Claim 29
Dependent Claim
119 words
The photoreceptor as claimed in claim 12, wherein the thickness of said surface modifying layer is from 400 to 5000 Å, the thickness of said interlayer is not more than 5000 Å, the thickness of said charge generating layer is from 5 to 7 μm, said charge transport layer contains from 10 to 20 atomic % of C based on the total number of Si and C atoms being 100 atomic %, the thickness of said charge transport layer is from 10 to 30 μm, and a charge blocking layer from 500 Åto 2 μm thick and comprising one selected from the group consisting of a-SiC:H, a-SiC:F and a-SiC:H:F is interposed between said charge transport layer and said support.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-06-15 | 1990-12-15 | 1991-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-06-15 | 1994-12-15 | 1995-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-06-15 | 1998-12-15 | 1999-06-16 | $7700.00 | Window Closed / Lapsed |