US4670064A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Generating high purity ions by non-thermal excimer laser processing
Assignee: Mid-America Commercialization Corp
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Filing: 1985-04-10
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Granted: 1987-06-02
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Expires: 2005-04-10
Abstract
Abstract A semiconductor ion implantation processing technique is disclosed for implanting high purity, high flux density ions in a semiconductor wafer substrate. A reactant gas is irradiated with excimer pulsed ultraviolet laser radiation at a discrete designated pulsed wavelength corresponding to a discrete designated ionization excitation energy of the gas photochemically breaking bonds of the gas to nonthermally photolytically ionize the gas. The ions are then accelerated by an electric field for subsequent implantation into a surface.
Inventors
- 👤 Steven R. Schachameyer
- 👤 James A. Benjamin
- 👤 John B. Pardee
- 👤 Lyle O. Hoppie
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 11:37
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3171; H01J27/00; H01J27/02; H01J27/24; H01J37/02; H01J37/04; H01J37/08; Y; Y10; Y10S; Y10S148/00; Y10S148/083
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
111 words
A semiconductor ion implantation processing technique including a method for generating high purity ions for implantation, comprising: providing a processing chamber; introducing a gas into said chamber; providing an excimer pulsed ultraviolet laser and introducing radiation therefrom into said chamber at a discrete designated wavelength to photolytically react with said gas at a discrete designated excitation energy photochemically breaking bonds of said gas to nonthermally activate and ionize said gas, without thermally driven pyrolytic reaction; providing a second processing chamber; placing a semiconductor wafer substrate in said second chamber; and providing a transer passage between said chambers for communicating ions from said first to said second chamber to implant said substrate.
Claim 2
Dependent Claim
111 words
A semiconductor ion implantation processing technique including a method for generating high purity ions for implantation, comprising: providing a processing chamber; introducing a gas into said chamber; providing an excimer pulsed ultraviolet laser and introducing radiation therefrom into said chamber at a discrete designated wavelength to photolytically react with said gas at a discrete designated excitation energy photochemically breaking bonds of said gas to nonthermally activate and ionize said gas, without thermally driven pyrolytic reaction; providing a second processing chamber; placing a semiconductor wafer substrate in said second chamber; and providing a transer passage between said chambers for communicating ions from said first to said second chamber to implant said substrate.
Claim 3
Dependent Claim
17 words
The invention according to claim 1, comprising providing acceleration means and accelerating said ions toward said substrate.
Claim 4
Dependent Claim
37 words
The invention according to claim 2 comprising providing boron trifluoride said gas and activating said boron trifluoride with said discrete designated pulsed wavelength excimer ultraviolet laser radiation to yield a boron +3 ion and three fluorine atoms.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-06-01 | 1990-12-01 | 1991-06-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-06-01 | 1994-12-01 | 1995-06-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-06-01 | 1998-12-01 | 1999-06-02 | $7700.00 | Window Closed / Lapsed |