Patent US6313019B1 successfully refreshed from Google Patents.
US4667218A
Expired / Lapsed
US
⏱️ 0.0 years remaining
NPN transistor with base double doped with arsenic and boron
Assignee: Toshiba Corp
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Filing: 1980-11-19
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Granted: 1987-05-19
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Expires: 2000-11-19
Abstract
Abstract A semiconductor device comprising an N type collector layer formed in an N type semiconductor wafer, a P type base layer which is in contact with the N type collector layer at a PN junction that extends to the surface and which contains an N type impurity material of which the energy of combination with vacancies is great and boron which is a P type impurity material, and an N type emitter layer which is so formed as to be surrounded by this P type base layer and forms a transistor together with the N type collector layer and the P type base layer and which contains the N type impurity materials phosphorus and arsenic. Arsenic or antimony or the like, which are N type impurity materials of which the energy of combination with vacancies is great are diffused in the P type base layer.
Inventors
- 👤 Kouichi Takahashi
- 👤 Hidekuni Ishida
- 👤 Toshio Yonezawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:28
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/834; H10D10/00; H10D10/40; H10D10/421; H10D62/10; H10D62/13; H10D62/133; H10D62/17; H10D62/177; H10P; H10P32/00; Y; Y10; Y10S; Y10S438/00; Y10S438/965
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
122 words
A semiconductor device comprising: an N type collector layer formed in a semiconductor wafer having a substantially flat surface; a P type base layer contacting said N type collector layer at a first PN junction extending to said surface and containing an N type impurity having a high energy of combination with vacancies and a P type impurity; and an N type emitter layer contacting said P type base layer at a second PN junction extending to said surface, said N type emitter layer being surrounded by said P type base layer, said n type emitter layer forming a transistor together with said N type collector layer and said P type base layer, said N type emitter layer containing at least phosphorus.
Claim 2
Dependent Claim
122 words
A semiconductor device comprising: an N type collector layer formed in a semiconductor wafer having a substantially flat surface; a P type base layer contacting said N type collector layer at a first PN junction extending to said surface and containing an N type impurity having a high energy of combination with vacancies and a P type impurity; and an N type emitter layer contacting said P type base layer at a second PN junction extending to said surface, said N type emitter layer being surrounded by said P type base layer, said n type emitter layer forming a transistor together with said N type collector layer and said P type base layer, said N type emitter layer containing at least phosphorus.
Claim 3
Dependent Claim
57 words
The semiconductor device according to claim 1, wherein: the P type impurity concentration in the direction of the depth of said P type base layer containing said N type impurity having a high energy of combination with vacancies is made substantially uniform by the concentration distribution of said N type impurity in the direction of the depth.
Claim 4
Dependent Claim
22 words
The semiconductor device according to claim 1, wherein: said N type impurity having a high energy of combination with vacancies is arsenic.
Claim 5
Dependent Claim
22 words
The semiconductor device according to claim 1, wherein: said N type impurity having a high energy of combination with vacancies is antimony.
Claim 6
Dependent Claim
125 words
A semiconductor device comprising: an N type collector layer formed in a semiconductor wafer having a substantially flat surface; a P type base layer contacting said N type collector layer at a first PN junction extending to said surface and containing an N type impurity having a high energy of combination with vacancies and boron as a P type impurity material; and an N type emitter layer contacting said P type base layer at a second PN junction extending to said surface, said N type emitter layer being surrounded by said P type base layer, said N type emitter layer forming a transistor together with said N type collector layer and said P type base layer, said N type emitter layer containing phosphorus and arsenic.
Claim 7
Dependent Claim
125 words
A semiconductor device comprising: an N type collector layer formed in a semiconductor wafer having a substantially flat surface; a P type base layer contacting said N type collector layer at a first PN junction extending to said surface and containing an N type impurity having a high energy of combination with vacancies and boron as a P type impurity material; and an N type emitter layer contacting said P type base layer at a second PN junction extending to said surface, said N type emitter layer being surrounded by said P type base layer, said N type emitter layer forming a transistor together with said N type collector layer and said P type base layer, said N type emitter layer containing phosphorus and arsenic.
References Cited (Backward Citations)
US3834953A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-05-18 | 1990-11-17 | 1991-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-05-18 | 1994-11-17 | 1995-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-05-18 | 1998-11-17 | 1999-05-19 | $7700.00 | Window Closed / Lapsed |