Abstract A sapphire wafer-grinding method which can minimize the warp of a plane ground sapphire wafer. A sapphire wafer used with a semiconductor device is so fabricated that its surface is constituted by an R plane {1102}. A plurality of C planes or atomic net planes (0001) extend in parallel crosswise of the sapphire wafer at an inclination angle of about 57.6° to the surface or R plane {1102} of the sapphire wafer. The particles of a rotating grindstone are moved in the normal inclination direction of the C planes (0001) of the sapphire wafer to grind the surface or R plane {1102} of the sapphire wafer. The normal inclination direction of the C planes (0001) of the sapphire wafer includes the directions which are deflected on the R plane from the projection of the C axis [0001] of the sapphire wafer to an extent of ±35°.
A method of grinding a sapphire wafer the main surface of which is the R plane {1102} and which has a plurality of parallel C planes (0001) intersecting said R plane {1102} at an angle of 57.6° C., said method comprising the steps of: (a) holding said sapphire wafer in position to grind the main surface of said sapphire wafer and (b) grinding the main surface of said sapphire wafer with a grindstone such that the working surface of said grindstone moves in a direction which: (i) is perpendicular to the parallel lines defined by the intersection of said C planes (0001) with said R plane {1102} with an accuracy of I 35° lateral deflection in said R plane {1102} and (ii) is from the acute angle side to the obtuse angle side of the angles formed at the intersections between said C planes (0001) and said R plane {1102}.
Claim 2
Independent Claim
150 words
A method of grinding a sapphire wafer the main surface of which is the R plane {1102} and which has a plurality of parallel C planes (0001) intersecting said R plane {1102} at an angle of 57.6° C., said method comprising the steps of: (a) holding said sapphire wafer in position to grind the main surface of said sapphire wafer and (b) grinding the main surface of said sapphire wafer with a grindstone such that the working surface of said grindstone moves in a direction which: (i) is perpendicular to the parallel lines defined by the intersection of said C planes (0001) with said R plane {1102} with an accuracy of I 35° lateral deflection in said R plane {1102} and (ii) is from the acute angle side to the obtuse angle side of the angles formed at the intersections between said C planes (0001) and said R plane {1102}.
Claim 3
Dependent Claim
20 words
A method as recited in claim 1 wherein the working surface of said grindstone moves perpendicularly to said parallel lines.