US4660177A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dual port complementary memory
Assignee: Nokia Bell Labs
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Filing: 1985-01-14
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Granted: 1987-04-21
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Expires: 2005-01-14
Abstract
Abstract A dual port memory is implemented in complementary (e.g., CMOS) technology so as to allow simultaneous uncontested read operations to the same memory cell. This is achieved by accessing one node of a bistable static cell through a n-channel and a p-channel access transistor. The opposite node is typically left unconnected to external access means. This technique also reduces the area required to implement the memory cell as compared to prior art NMOS techniques. If desired, an arbitration circuit can be included to arbitrate between simultaneous read/read or read/write operations on the same cell from the two ports.
Inventors
- 👤 Kevin J. O'Connor
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 10:57
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/412; G11C8/00; G11C8/16
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
121 words
An integrated circuit comprising at least one information memory cell adapted to being accessed from a first port and a second port, and wherein said cell comprises a bistable circuit having a first node and a second node that are stable in opposite voltage levels, and switchable between said levels in response to an information signal, characterized in that said first node is coupled to said first port through an access transistor of a first conductivity type when the votage on the control electrode thereof is at low level, and said first node is coupled to said second port through an access transistor of a second conductivity type when the voltage on the control electrode thereof is at a high level.
Claim 2
Dependent Claim
121 words
An integrated circuit comprising at least one information memory cell adapted to being accessed from a first port and a second port, and wherein said cell comprises a bistable circuit having a first node and a second node that are stable in opposite voltage levels, and switchable between said levels in response to an information signal, characterized in that said first node is coupled to said first port through an access transistor of a first conductivity type when the votage on the control electrode thereof is at low level, and said first node is coupled to said second port through an access transistor of a second conductivity type when the voltage on the control electrode thereof is at a high level.
Claim 3
Dependent Claim
23 words
The integrated circuit of claim 1 wherein said bistable circuit comprises a first complementary inverter that is cross-coupled with a second complementary inverter.
Claim 4
Dependent Claim
35 words
The integrated circuit of claim 1 further comprising arbitration means for determining which of said first and second ports accesses said cell prior to the other during a write operation from either of said ports.
Claim 5
Dependent Claim
30 words
The integrated circuit of claim 1 wherein said ports are adapted to communicate binary information between said cell and a source of information that is external to said integrated circuit.
Claim 6
Dependent Claim
33 words
The integrated circuit of claim 1 further comprising computation means for performing logical operations on binary data, wherein said ports are adapted to communicate binary information between said cell and said computation means.
Claim 7
Dependent Claim
37 words
The integrated circuit of claim 1 further comprising an inverter coupled between one of said ports and the access transistor coupled thereto, whereby the logic level at said port is inverted with respect to said first node.
Claim 8
Dependent Claim
45 words
The integrated circuit of claim 1 wherein said access transistor of a first conductivity type is a p-channel field effect transistor, and said access transistor of a second conductivity type is a n-channel field effect transistor, and wherein said control electrode is the gate thereof.
Claim 9
Dependent Claim
45 words
The integrated circuit of claim 7 wherein at least during a portion of a write operation into said cell the voltage on the gate of said p-channel field effect transistor is boosted more negative then the negative power supply voltage applied to said bistable circuit.
Claim 10
Dependent Claim
45 words
The integrated circuit of claim 7 wherein at least during a portion of a write operation into said cell the voltage on the gate of said n-channel field effect transistor is boosted more positive than the positive power supply voltage applied to said bistable circuit.
Claim 11
Dependent Claim
25 words
The integrated circuit of claim 7 wherein a write operation may be performed into said memory cell from either of said first and second ports.
Claim 12
Dependent Claim
37 words
The integrated circuit of claim 7 wherein a write operation may be performed into said memory cell only from said second port due to the presence of a diode between said first port and said first node.
Claim 13
Dependent Claim
34 words
The integrated circuit of claim 1 wherein said access transistor of a first conductivity type is a pnp bipolar transistor, and said access transistor of a second conductivity type is a npn bipolar transistor.
References Cited (Backward Citations)
US4447891A
Cited
US4541076A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-04-20 | 1990-10-20 | 1991-04-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-04-20 | 1994-10-20 | 1995-04-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-04-20 | 1998-10-20 | 1999-04-21 | $7700.00 | Window Closed / Lapsed |