US4658233A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Strain gauge
Assignee: Fuji Electric Co Ltd
•
Filing: 1985-03-18
•
Granted: 1987-04-14
•
Expires: 2005-03-18
Abstract
Abstract A strain gauge includes a flexible substrate and film of microfine grains of amorphous silicon connected between electrodes. A strain gauge assembly comprises a substrate, a first electrode formed on the substrate, a semiconductor body connected at a first end to the first wire and including a plurality of layers of different semiconductor materials forming a blocking diode and a resistance, and a second electrode connected to a second end of the semiconductor body such that the diode and resistance are between the first and second electrodes.
Inventors
- 👤 Yoshiyuki Uchida
- 👤 Masaharu Nishiura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:56
CPC Classifications
G; G01; G01L; G01L1/00; G01L1/20; G01L1/22; G01L1/2287; G01L1/2293; G01L1/225; G01L1/2262; G01L5/00; G01L5/22; G01L5/226; G01L5/228
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
68 words
A strain gauge comprising: a substrate; an amorphous semiconductor film formed on said substrate, said amorphous semiconductor film comprising microfine grains and having a resistivity in a range of 1 to 10 ohms/cm; an electrode pair coupled to said amorphous semiconductor film to sense changes in the resistance of said film responsive to strain applied to said film and to determine the amount and direction of the strain.
Claim 2
Dependent Claim
68 words
A strain gauge comprising: a substrate; an amorphous semiconductor film formed on said substrate, said amorphous semiconductor film comprising microfine grains and having a resistivity in a range of 1 to 10 ohms/cm; an electrode pair coupled to said amorphous semiconductor film to sense changes in the resistance of said film responsive to strain applied to said film and to determine the amount and direction of the strain.
Claim 3
Dependent Claim
18 words
A strain gauge according to claim 1, wherein said semiconductor film comprises amorphous silicon formed by glow discharge.
Claim 4
Dependent Claim
36 words
A strain gauge according to claim 1, wherein said semiconductor film includes a p-type semiconductor film formed on said substrate and an n-type semiconductor film formed on said substrate in parallel to said p-type semiconductor film.
Claim 5
Dependent Claim
86 words
A strain gauge comprising: a substrate; first, second and third electrodes formed on said substrate; a first semiconductor film formed on said substrate to connect said first and second electrodes; and a second semiconductor film formed on said substrate to connect said second and third electrodes, said first and second semiconductor films comprising amorphous silicon having microfine grains and a resistivity in a range of 1 to 10 ohms/cm, wherein said electrodes are used to determine amount and direction of strain exerted on said semiconductor films.
Claim 6
Dependent Claim
86 words
A strain gauge comprising: a substrate; first, second and third electrodes formed on said substrate; a first semiconductor film formed on said substrate to connect said first and second electrodes; and a second semiconductor film formed on said substrate to connect said second and third electrodes, said first and second semiconductor films comprising amorphous silicon having microfine grains and a resistivity in a range of 1 to 10 ohms/cm, wherein said electrodes are used to determine amount and direction of strain exerted on said semiconductor films.
Claim 7
Dependent Claim
19 words
A strain gauge according to claim 4, wherein said first semiconductor film is perpendicular to said second semiconductor film.
Claim 8
Dependent Claim
20 words
A strain gauge according to claim 5, wherein said first and second semiconductor film are of the same conductivity type.
Claim 9
Dependent Claim
19 words
A strain gauge according to claim 4, wherein said first semiconductor film is parallel to said second semiconductor film.
Claim 10
Dependent Claim
19 words
A strain gauge according to claim 7, wherein said first and second semiconductor films are of opposite conductivity types.
Claim 11
Dependent Claim
120 words
A strain gauge comprising: a substrate; first, second, third and fourth electrodes formed on said substrate; a first semiconductor film formed on said substrate to connect said first and second electrodes; a second semiconductor film formed on said substrate to connect said second and third electrodes; a third semiconductor film formed on said substrate to connect said third and fourth electrodes; and a fourth semiconductor film formed on said substrate to connect said first and fourth electrodes, said first, second, third and fourth semiconductor films comprising amorphous silicon material having microfine grains and a resistivity in a range of 1 to 10 ohms/cm, wherein said electrodes are used to determine amount and direction of strain exerted on said semiconductor films.
Claim 12
Dependent Claim
120 words
A strain gauge comprising: a substrate; first, second, third and fourth electrodes formed on said substrate; a first semiconductor film formed on said substrate to connect said first and second electrodes; a second semiconductor film formed on said substrate to connect said second and third electrodes; a third semiconductor film formed on said substrate to connect said third and fourth electrodes; and a fourth semiconductor film formed on said substrate to connect said first and fourth electrodes, said first, second, third and fourth semiconductor films comprising amorphous silicon material having microfine grains and a resistivity in a range of 1 to 10 ohms/cm, wherein said electrodes are used to determine amount and direction of strain exerted on said semiconductor films.
Claim 13
Dependent Claim
29 words
A strain gauge according to claim 9, wherein said first and third semiconductor films are formed in parallel and said second and fourth semiconductor films are formed in parallel.
Claim 14
Dependent Claim
23 words
A strain gauge according to claim 10, wherein said first and third semiconductor films are perpendicular to said second and fourth semiconductor films.
Claim 15
Dependent Claim
24 words
A strain gauge according to claim 11, further including a fifth semiconductor film formed on said substrate to connect said first and third electrodes.
Claim 16
Dependent Claim
120 words
A strain gauge assembly comprising: a substrate; a first wire formed on said substrate; a semiconductor body formed on said substrate having a first end connected to said first wire and a second end, said semiconductor body including a plurality of layers of different semiconductor materials forming a p-n junction, each of said semiconductor materials being amorphous silicon comprising microfine grains and having a resistivity in a range of 1 to 10 ohms/cm; and a second wire formed on said substrate and insulated from said first wire, said second wire being connected to said second end of said semiconductor body, wherein said first and second wires are used to determine amount and direction of strain exerted on said semiconductor body.
Claim 17
Dependent Claim
120 words
A strain gauge assembly comprising: a substrate; a first wire formed on said substrate; a semiconductor body formed on said substrate having a first end connected to said first wire and a second end, said semiconductor body including a plurality of layers of different semiconductor materials forming a p-n junction, each of said semiconductor materials being amorphous silicon comprising microfine grains and having a resistivity in a range of 1 to 10 ohms/cm; and a second wire formed on said substrate and insulated from said first wire, said second wire being connected to said second end of said semiconductor body, wherein said first and second wires are used to determine amount and direction of strain exerted on said semiconductor body.
Claim 18
Dependent Claim
32 words
A strain gauge according to claim 13, wherein said layers of semiconductor material comprising said semiconductor body form a blocking diode and a resistance between said first wire and said second wire.
References Cited (Backward Citations)
US4411158A
Cited
US4422063A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-04-13 | 1990-10-13 | 1991-04-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-04-13 | 1994-10-13 | 1995-04-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-04-13 | 1998-10-13 | 1999-04-14 | $7700.00 | Window Closed / Lapsed |