US4656419A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Simplified solar cell material tester
Assignee: The AT&T MVPD Group LLC
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Filing: 1984-09-20
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Granted: 1987-04-07
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Expires: 2004-09-20
Abstract
Abstract The quality of photovoltaic semiconductor material for use in solar cells may be determined through the determination of the minority carrier diffusion length, in a simple manner. First, a thick slug or a thin plate or slice of the semiconductor material is polished on the front side, and mechanically finished in a predetermined manner on the back side. Then light at two different wavelengths, is applied to the plate, and the photovoltage and light intensity is measured first with light of one wavelength incident thereon, and then with light of the other wavelength. The ratio of the two intensities required to give the same output photovoltage determines the minority carrier diffusion length. The apparatus includes a light chopper, a photocell or thermocouple for determining relative intensity, and a simple mounting cell, for non-destructively coupling to the semiconductor sample with sensing electrodes, on the opposite sides of the sample. The circuitry may include a digital voltmeter and a microprocessor.
Inventors
- 👤 George F. J. Garlick
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 10:00
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/26; G01R31/2607; G01R31/2632; H; H02; H02S; H02S50/00; H02S50/10; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S136/00; Y10S136/29
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
204 words
A method for testing quality of thin slices of photovoltaic semiconductor material having a thickness of less than one minority carrier diffusion length, by determining the minority carrier diffusion lengths, comprising the steps of: preparing a thin slice of semiconductor material by polishing one side thereof, and preparing the other side thereof with a predetermined surface finish; coupling to both sides of said thin slice of semiconductor material with electrodes; directing light having a predetermined first wavelength onto the polished surface of said slice; measuring a first photovoltage developed at said electrodes while light at said first wavelength is applied to said slice; measuring a first intensity of illumination applied to said slice at said first wavelength; directing light having a different predetermined second wavelength onto said slice; measuring a second photovoltage developed at said electrodes while light at said second wavelength is applied to said slice; measuring a second intensity of illumination applied to said slice at said second wavelength; normalizing said first and second intensities of illumination at said first and second wavelengths; determining the ratio of said second normalized intensity of illumination with respect to said first normalized intensity of illumination; and ascertaining the minority carrier diffusion length from said ratio.
Claim 2
Independent Claim
204 words
A method for testing quality of thin slices of photovoltaic semiconductor material having a thickness of less than one minority carrier diffusion length, by determining the minority carrier diffusion lengths, comprising the steps of: preparing a thin slice of semiconductor material by polishing one side thereof, and preparing the other side thereof with a predetermined surface finish; coupling to both sides of said thin slice of semiconductor material with electrodes; directing light having a predetermined first wavelength onto the polished surface of said slice; measuring a first photovoltage developed at said electrodes while light at said first wavelength is applied to said slice; measuring a first intensity of illumination applied to said slice at said first wavelength; directing light having a different predetermined second wavelength onto said slice; measuring a second photovoltage developed at said electrodes while light at said second wavelength is applied to said slice; measuring a second intensity of illumination applied to said slice at said second wavelength; normalizing said first and second intensities of illumination at said first and second wavelengths; determining the ratio of said second normalized intensity of illumination with respect to said first normalized intensity of illumination; and ascertaining the minority carrier diffusion length from said ratio.
Claim 3
Dependent Claim
26 words
A method as defined in claim 1 including the step of varying the intensity of the light applied to said sample to maintain the photovoltage constant.
Claim 4
Dependent Claim
20 words
A method as defined in claim 1 including the step of interrupting or chopping the illumination applied to said sample.
Claim 5
Dependent Claim
38 words
A method as defined in claim 1 wherein said step of preparing the other side of the sample with a predetermined surface finish includes the step of lapping said other side of said sample to a matte finish.
Claim 6
Independent Claim
204 words
A method for testing quality of photovoltaic semiconductor material having a thickness of less than one minority carrier diffusion length, for use as solar cells, by determining the minority carrier diffusion length, comprising the steps of: preparing a thin slice of semiconductor material by polishing one side thereof, and preparing the other side thereof with a predetermined surface finish; coupling to both sides of said thin slice of semiconductor material with electrodes; directing light having a first predetermined wavelength onto the polished surface of said slice; measuring a first photovoltage developed at said electrodes while light at said first wavelength is applied to said slice; directing light having a second different predetermined wavelength onto said slice; adjusting the light intensity so that the photovoltage developed at said electrodes while light at said second wavelength is applied to said slice is substantially the same as said first photovoltage at said first wavelength; measuring a second intensity of illumination applied to said slice at said second wavelength; determining the ratio of the light intensity at one of said first and second wavelengths relative to the light intensity at the other of said first and second wavelengths; and ascertaining the minority carrier diffusion length from said ratio.
Claim 7
Independent Claim
204 words
A method for testing quality of photovoltaic semiconductor material having a thickness of less than one minority carrier diffusion length, for use as solar cells, by determining the minority carrier diffusion length, comprising the steps of: preparing a thin slice of semiconductor material by polishing one side thereof, and preparing the other side thereof with a predetermined surface finish; coupling to both sides of said thin slice of semiconductor material with electrodes; directing light having a first predetermined wavelength onto the polished surface of said slice; measuring a first photovoltage developed at said electrodes while light at said first wavelength is applied to said slice; directing light having a second different predetermined wavelength onto said slice; adjusting the light intensity so that the photovoltage developed at said electrodes while light at said second wavelength is applied to said slice is substantially the same as said first photovoltage at said first wavelength; measuring a second intensity of illumination applied to said slice at said second wavelength; determining the ratio of the light intensity at one of said first and second wavelengths relative to the light intensity at the other of said first and second wavelengths; and ascertaining the minority carrier diffusion length from said ratio.
Claim 8
Dependent Claim
20 words
A method as defined in claim 5 including the step of interrupting or chopping the illumination applied to said plate.
Claim 9
Dependent Claim
38 words
A method as defined in claim 5 wherein said step of preparing the other side of the sample with a predetermined surface finish includes the step of lapping said other side of said plate to a matte finish.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-04-06 | 1990-10-06 | 1991-04-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-04-06 | 1994-10-06 | 1995-04-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-04-06 | 1998-10-06 | 1999-04-07 | $7700.00 | Window Closed / Lapsed |