Silica-based synthetic materials containing boron in the crystal lattice and processes for their preparation

Claim 1

A synthetic, silica-based crystalline material consisting essentially of crystalline silica modified through the introduction of boron into the crystalline latice as a replacement element for silicon said material being represented by the general formula: aR.sub.2 O·bC.sub.2/n O·B.sub.2 O.sub.3 XSiO.sub.2 wherein R is tetramethylammonium; C is a cation selected from the group consisting of H + and NH 4 + or metal having a valence equal to n; a is 0-1; b is 0-1; x is a number from 8-30 said silica based crystalline material having the following X-ray diffraction lines and relative intensity; ______________________________________ d (A) Relative Intensity ______________________________________ 8.82 M 8.25 S 6.52 M 6.12 M 5.61 MW 5.32 W 4.42 MW 4.27 MW 4.09 MW 4.02 MW 3.92 MW 3.83 M 3.47 W 3.42 W 3.27 MW 2.88 W 2.74 W 2.47 W. ______________________________________

Claim 5

A method for preparing a synthetic, silica-based boron modified material selected from the group consisting of crystalline silica modified through the introduction of boron into the crystalline latice as a replacement element for silicon said material being represented by the general formula: aR.sub.2 O·bC.sub.2/n O·B.sub.2 O.sub.3 XSiO.sub.2 wherein R is tetramethylammonium; C is a cation selected from the group consisting of H + and NH4 + or a metal having a valence equal to n; a is 0-1; b is 0-1; x is a number from 8-30 said silica based crystalline material having the following x-ray diffraction lines and relative intensity; ______________________________________ d (A) Relative Intensity ______________________________________ 8.82 M 8.25 S 6.52 M 6.12 M 5.61 MW 5.32 W 4.42 MW 4.27 MW 4.09 MW 4.02 MW 3.92 MW 3.83 M 3.47 W 3.42 W 3.27 MW 2.88 W 2.74 W 2.47 W. ______________________________________ or by the general formula: aR.sub.2 O·bC.sub.2/n O·B.sub.2 O.sub.3 XSiO.sub.2 wherein R is tetraethylammonium; C is a cation selected from the group consisting of H+ and NH4+ or a metal having a valence equal to n; a is 0-1; b is 0-1; x is a number from 5-50 having the following x-diffraction lines and relative intensity; ______________________________________ d(A) Relative Intensity ______________________________________ 11.23 S 6.52 W 5.98 W 4.08 MW 3.90 S 3.46 MW 3.26 MW 3.05 W 2.98 MW 2.65 W 2.05 W. ______________________________________ said method characterized in that it comprises the steps of reacting, in an aqueous, alcoholic, or hydroalcoholic solution, a derivative of silicon and a derivative of a modifying element selected from the group consisting of the oxides, hydroxides, alkoxy derivatives, salts, and halides of boron with a substance having a clathrating effect that is selected from the group consisting of tetramethylammonium hydroxide and tetraethylammonium, hydroxide, adding one or more mineralizing agents selected from the group consisting of the alkaline metal hydroxides and halides in order to encourage crystalization and crystalizing the mixture in an enclosure for a period of from a few hours to a number of days at a temperature of 145°-150°, cooling the mixture and, upon collection on a filter and thereafter washing, drying and firing in air the resultant composition at a temperature between 300° C. and 700° for a time of from 2 hours to 24 hours, washing with distilled water brought to a boil and containing dissolved therein an ammonium salt, and finally firing again at the same temperature and for the same time specified above.

Claim 6

A method for preparing a synthetic, silica-based boron modified material selected from the group consisting of crystalline silica modified through the introduction of boron into the crystalline latice as a replacement element for silicon said material being represented by the general formula: aR.sub.2 O·bC.sub.2/n O·B.sub.2 O.sub.3 XSiO.sub.2 wherein R is tetramethylammonium; C is a cation selected from the group consisting of H + and NH4 + or a metal having a valence equal to n; a is 0-1; b is 0-1; x is a number from 8-30 said silica based crystalline material having the following x-ray diffraction lines and relative intensity; ______________________________________ d (A) Relative Intensity ______________________________________ 8.82 M 8.25 S 6.52 M 6.12 M 5.61 MW 5.32 W 4.42 MW 4.27 MW 4.09 MW 4.02 MW 3.92 MW 3.83 M 3.47 W 3.42 W 3.27 MW 2.88 W 2.74 W 2.47 W. ______________________________________ or by the general formula: aR.sub.2 O·bC.sub.2/n O·B.sub.2 O.sub.3 XSiO.sub.2 wherein R is tetraethylammonium; C is a cation selected from the group consisting of H+ and NH4+ or a metal having a valence equal to n; a is 0-1; b is 0-1; x is a number from 5-50 having the following x-diffraction lines and relative intensity; ______________________________________ d(A) Relative Intensity ______________________________________ 11.23 S 6.52 W 5.98 W 4.08 MW 3.90 S 3.46 MW 3.26 MW 3.05 W 2.98 MW 2.65 W 2.05 W. ______________________________________ said method characterized in that it comprises the steps of reacting, in an aqueous, alcoholic, or hydroalcoholic solution, a derivative of silicon and a derivative of a modifying element selected from the group consisting of the oxides, hydroxides, alkoxy derivatives, salts, and halides of boron with a substance having a clathrating effect that is selected from the group consisting of tetramethylammonium hydroxide and tetraethylammonium, hydroxide, adding one or more mineralizing agents selected from the group consisting of the alkaline metal hydroxides and halides in order to encourage crystalization and crystalizing the mixture in an enclosure for a period of from a few hours to a number of days at a temperature of 145°-150°, cooling the mixture and, upon collection on a filter and thereafter washing, drying and firing in air the resultant composition at a temperature between 300° C. and 700° for a time of from 2 hours to 24 hours, washing with distilled water brought to a boil and containing dissolved therein an ammonium salt, and finally firing again at the same temperature and for the same time specified above.