US4654115A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for removing contaminant
Assignee: International Business Machines Corp
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Filing: 1986-04-08
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Granted: 1987-03-31
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Expires: 2006-04-08
Abstract
Abstract Contaminant is removed from holes by etching in a gaseous plasma by first removing contaminant from the vicinity of the edges of the hole. Next, a mask is provided in the vicinity of the edges to prevent etching by contacting with a gaseous plasma which is different from the gaseous plasma employed in the first etching step. The holes are then etched in a gaseous plasma to remove contaminant from the interior of the holes in the vicinity of the center of the holes, whereby the mask protects the edges from being etched.
Inventors
- 👤 Frank D. Egitto
- 👤 Francis Emmi
- 👤 Walter E. Mlynko
- 👤 Robin A. Susko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 03:49
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/0011; H05K3/0055; H05K2203/00; H05K2203/09; H05K2203/095
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
217 words
A process for removing contaminant from holes which comprises: (a) etching said holes in a gaseous plasma to remove contaminant from the vicinity of the edges of the hole wherein said gaseous plasma is formed from oxygen and a fluorinated compound and wherein the relative amounts of oxygen and said fluorinated compound are selected so as to remove said contaminant from the vicinity of said edges; (b) next, providing a mask to prevent etching within the vicinity of said edges, but not within the vicinity of the center of said holes by providing a gaseous plasma different from the gaseous plasma employed in step (a) being from a fluorinated compound and wherein the amounts of fluorinated compound are selected so as to form said mask in the vicinity of said edges; and (c) etching said holes in a gaseous plasma to remove contaminant from the interior in the vicinity of the center of said holes wherein said mask protects the vicinity of said edges from being etched and wherein said gaseous plasma is formed from oxygen and a fluorinated compound wherein the relative amounts of oxygen and said fluorinated compound are selected so as to cause etching in the vicinity of the center of said holes and are different from the gaseous plasma employed in step (b).
Claim 2
Dependent Claim
217 words
A process for removing contaminant from holes which comprises: (a) etching said holes in a gaseous plasma to remove contaminant from the vicinity of the edges of the hole wherein said gaseous plasma is formed from oxygen and a fluorinated compound and wherein the relative amounts of oxygen and said fluorinated compound are selected so as to remove said contaminant from the vicinity of said edges; (b) next, providing a mask to prevent etching within the vicinity of said edges, but not within the vicinity of the center of said holes by providing a gaseous plasma different from the gaseous plasma employed in step (a) being from a fluorinated compound and wherein the amounts of fluorinated compound are selected so as to form said mask in the vicinity of said edges; and (c) etching said holes in a gaseous plasma to remove contaminant from the interior in the vicinity of the center of said holes wherein said mask protects the vicinity of said edges from being etched and wherein said gaseous plasma is formed from oxygen and a fluorinated compound wherein the relative amounts of oxygen and said fluorinated compound are selected so as to cause etching in the vicinity of the center of said holes and are different from the gaseous plasma employed in step (b).
Claim 3
Dependent Claim
17 words
The process of claim 1 wherein the aspect ratio of said holes is at least about 3:1.
Claim 4
Dependent Claim
17 words
The process of claim 1 wherein the aspect ratio of said holes is at least about 9:1.
Claim 5
Dependent Claim
41 words
The process of claim 1 wherein the fluorinated compound is selected from the group of CF 4 , C 2 F 6 , CFCl 3 , CF 3 Cl, SF 6 , NF 3 , and CCl 2 F 2 .
Claim 6
Dependent Claim
13 words
The process of claim 1 wherein said fluorinated compound is CF 4 .
Claim 7
Dependent Claim
10 words
The process of claim 1 wherein said dielectric is epoxy.
Claim 8
Dependent Claim
41 words
The process of claim 6 wherein said fluorinated compound is selected from the group of CF 4 , C 2 F 6 , CFCl 3 , CF 3 Cl, SF 6 , NF 3 , and CCl 2 F 2 .
Claim 9
Dependent Claim
13 words
The process of claim 6 wherein said fluorinated compound is CF 4 .
Claim 10
Dependent Claim
42 words
The process of claim 6 wherein said fluorinated compound is CF 4 and the mole ratio of oxygen/CF 4 in steps (a) and (c) is 60 to 90/40 to 10; and the mole ratio of oxygen/CF 4 in step (b) is 0-45/100-55.
Claim 11
Dependent Claim
27 words
The process of claim 6 wherein the fluorinated compound is CF 4 and the mole ratio of oxygen/CF 4 in steps (a) and (c) is about 70/30.
Claim 12
Dependent Claim
18 words
The process of claim 10 wherein the mole ratio of oxygen/CF 4 in step (b) is about 40/60.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-03-30 | 1990-09-29 | 1991-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-03-30 | 1994-09-29 | 1995-03-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-03-30 | 1998-09-29 | 1999-03-31 | $7700.00 | Window Closed / Lapsed |