US4651303A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Non-volatile memory cell
Assignee: STMicroelectronics lnc USA
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Filing: 1985-09-23
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Granted: 1987-03-17
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Expires: 2005-09-23
Abstract
Abstract A volatile/non-volatile integrated circuit memory cell combines a non-volatile cell (110) connected to a volatile cell (105) at a volatile node (118), in which data recall is effected through a DC-stable arrangement of transistor (142), (145) and (146) that does not employ a capacitor to hold down the storage node.
Inventors
- 👤 Donald R. Dias
- 👤 Patrick R. Antaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:43
CPC Classifications
G; G11; G11C; G11C14/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
239 words
A combined memory cell comprising: a volatile memory cell having a volatile node for storing a predetermined voltage level, said volatile node having a volatile node impedance connected to one of a first and second current terminal; a non-volatile memory cell for storing data; a first data transfer transistor, connected to and having a gate electrode controlled by said non-volatile memory cell and connected between said second current terminal and an intermediate node; and a second data transfer transistor connected between said intermediate node and said volatile node and having a gate electrode connected to a recall signal terminal; characterized in that said combined memory cell further comprises a third data transfer transistor connected between said volatile node and said first current terminal, said third data transfer transistor having a gate electrode connected to said recall signal terminal, and further characterized in that each of said first, second and third data transfer transistors has an impendance related by the conditions that, when said first data transistor is turned off by said non-volatile memory cell and said third data transfer transistor is turned on, said third data transfer transistor is able to force said volatile node to the voltage of the said first current terminal and that, when said first, second and third data transfer transistors are turned on, said second and third data transistors are able to force said volatile node to the voltage of said second current terminal.
Claim 2
Dependent Claim
239 words
A combined memory cell comprising: a volatile memory cell having a volatile node for storing a predetermined voltage level, said volatile node having a volatile node impedance connected to one of a first and second current terminal; a non-volatile memory cell for storing data; a first data transfer transistor, connected to and having a gate electrode controlled by said non-volatile memory cell and connected between said second current terminal and an intermediate node; and a second data transfer transistor connected between said intermediate node and said volatile node and having a gate electrode connected to a recall signal terminal; characterized in that said combined memory cell further comprises a third data transfer transistor connected between said volatile node and said first current terminal, said third data transfer transistor having a gate electrode connected to said recall signal terminal, and further characterized in that each of said first, second and third data transfer transistors has an impendance related by the conditions that, when said first data transistor is turned off by said non-volatile memory cell and said third data transfer transistor is turned on, said third data transfer transistor is able to force said volatile node to the voltage of the said first current terminal and that, when said first, second and third data transfer transistors are turned on, said second and third data transistors are able to force said volatile node to the voltage of said second current terminal.
Claim 3
Dependent Claim
28 words
A combined memory cell according to claim 1, in which said first current terminal supplies current at a power supply voltage and said second current terminal is ground.
Claim 4
Dependent Claim
30 words
A combined memory cell according to claim 2, in which said volatile memory cell is a static RAM memory cell and said non-volatile cell is permanently programmed with fixed data.
References Cited (Backward Citations)
US4103348A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-03-16 | 1990-09-15 | 1991-03-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-03-16 | 1994-09-15 | 1995-03-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-03-16 | 1998-09-15 | 1999-03-17 | $7700.00 | Window Closed / Lapsed |