US4649408A
Expired / Lapsed
US
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Charge storage type semiconductor device and method for producing same
Assignee: Toshiba Corp
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Filing: 1983-11-15
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Granted: 1987-03-10
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Expires: 2003-11-15
Abstract
Abstract A charge storage type semiconductor device comprising a semiconductor substrate and means for accumulating charge in those portions of the substrate which are located in the vicinity of one of the major surfaces of the substrate. The substrate has a defect region of a high defect density and at least one defect free region having no crystal defects or a low defect density and formed in the vicinity of at least the major surface of the substrate. The defect region prevents unnecessary minority carriers from flowing into charge storage regions.
Inventors
- 👤 Hirokazu Sekine
- 👤 Katuhiko Morimune
- 👤 Masaharu Watanabe
- 👤 Nobuo Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:13
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/462; H10D44/464; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/386; H10D62/50; H10D62/53; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/158; H10P; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
125 words
A charge storage type semiconductor device comprising: a semiconductor substrate comprised of a single, crystal, said substrate having an interior short carrier diffusion length region with a crystal defect density of from 10 5 /cm 2 to 10 7 /cm 2 , and at least one long carrier diffusion length region, said long carrier diffusion length region being formed in the vicinity of at least one of the major surfaces of the substrate, said long carrier diffusion length region having a thickness of from about 5 to 60 microns; and means for accumlating charge in those portions of the substrate which are located in the vicinity of one of the major surfaces of the substrate, said interior region being separated from said charge accumulating means.
Claim 2
Dependent Claim
125 words
A charge storage type semiconductor device comprising: a semiconductor substrate comprised of a single, crystal, said substrate having an interior short carrier diffusion length region with a crystal defect density of from 10 5 /cm 2 to 10 7 /cm 2 , and at least one long carrier diffusion length region, said long carrier diffusion length region being formed in the vicinity of at least one of the major surfaces of the substrate, said long carrier diffusion length region having a thickness of from about 5 to 60 microns; and means for accumlating charge in those portions of the substrate which are located in the vicinity of one of the major surfaces of the substrate, said interior region being separated from said charge accumulating means.
Claim 3
Dependent Claim
34 words
A charge storage type semiconductor device according to claim 1, wherein the diffusion length of said long carrier diffusion length region is more than twice of that of said short carrier diffusion length region.
Claim 4
Dependent Claim
27 words
A charge storage type semiconductor device according to claim 1 or 2, wherein the diffusion length of said short carrier diffusion length is less than 40 microns.
Claim 5
Dependent Claim
108 words
A charge storage type semiconductor device comprising: a substrate of semiconductor material in the form of a singe crystal, said substrate having an interior portion having a crystal-defect density of from 10 5 /cm 2 to 10 7 /cm 2 , and at least one relatively defect free region adjacent one surface of said substrate, said region having a relatively low defect density with respect to said interior portion and a thickness of about 5 to 60 microns; and means for accumulating charge in locations in said defect-free regions adjacent said surface of said substrate, said interior portion being separated from said location in said defect free regions.
Claim 6
Dependent Claim
108 words
A charge storage type semiconductor device comprising: a substrate of semiconductor material in the form of a singe crystal, said substrate having an interior portion having a crystal-defect density of from 10 5 /cm 2 to 10 7 /cm 2 , and at least one relatively defect free region adjacent one surface of said substrate, said region having a relatively low defect density with respect to said interior portion and a thickness of about 5 to 60 microns; and means for accumulating charge in locations in said defect-free regions adjacent said surface of said substrate, said interior portion being separated from said location in said defect free regions.
Claim 7
Dependent Claim
43 words
A charge storage type semiconductor device according to claim 4, wherein said means for accumulating charge comprises means for forming potential wells in said locations adjacent said surface of said semiconductor substrate and means for generating and transferring charge to said potential wells.
Claim 8
Dependent Claim
82 words
A charge storage type semiconductor device according to claim 4, wherein a narrow defect containing region is formed in that portion of said semiconductor substrate which is located near one of the major surfaces of said substrate, said narrow defect containing region being connected to said interior portion and surrounding said means for accumulating charge; and said defect free region formed in the vicinity of the major surface of said substrate is divided by said narow defect containing region into island-like regions.
Claim 9
Dependent Claim
17 words
A charge storage type semiconducotor device according to claim 4, which is a charge-transfer type image sensor.
Claim 10
Dependent Claim
16 words
A charge storage type semiconductor device according to claim 4, which is an MOS dynamic RAM.
Claim 11
Dependent Claim
15 words
The device of claim 4 wherein said defects in said interior portion are induced thermally.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-03-09 | 1990-09-08 | 1991-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-03-09 | 1994-09-08 | 1995-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-03-09 | 1998-09-08 | 1999-03-10 | $7700.00 | Window Closed / Lapsed |