US4647403A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ion implanted polydiacetylenes
Assignee: Verizon Laboratories Inc
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Filing: 1984-07-13
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Granted: 1987-03-03
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Expires: 2004-07-13
Abstract
Abstract Ion implanted polydiacetylenes prepared by implanting ions into substituted polydiacetylenes at fluence levels from about 1×10 13 ions/cm 2 to about 1×10 17 ions/cm 2 are disclosed. Ion implanted polydiacetylenes exhibit electrical and/or optical properties which are different from those of untreated polydiacetylenes.
Inventors
- 👤 Boris S. Elman
- 👤 Daniel J. Sandman
- 👤 Sukant K. Tripathy
- 👤 Mrinal K. Thakur
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 02:01
CPC Classifications
H; H01; H01B; H01B1/00; H01B1/06; H01B1/12; H01B1/124; H01B1/125; C; C08; C08F; C08F8/00; C08L; C08L49/00; H10; H10K; H10K85/00; H10K85/10; H10K85/141
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
53 words
Ion implanted polydiacetylene prepared by implanting ions of a chemical element into fully conjugated, fully ordered crystalline polydiacetylene at a fluence level from approximately 1×10 13 ions/cm 2 to about 1×10 17 ions/cm 2 , wherein the polydiacetylene is represented by the formula ##STR5## wherein R and R' are carbon containing side groups.
Claim 2
Dependent Claim
53 words
Ion implanted polydiacetylene prepared by implanting ions of a chemical element into fully conjugated, fully ordered crystalline polydiacetylene at a fluence level from approximately 1×10 13 ions/cm 2 to about 1×10 17 ions/cm 2 , wherein the polydiacetylene is represented by the formula ##STR5## wherein R and R' are carbon containing side groups.
Claim 3
Dependent Claim
220 words
Ion implanted polydiacetylene prepared by implanting ions of a chemical element into fully conjugated, fully ordered crystalline polydiacetylene at fluence levels from approximately 1×10 13 ions/cm 2 to about 1×10 17 ions/cm 2 , wherein the polydiacetylene is represented by the formula: ##STR6## wherein the R--R' pairs are selected from the group consisting of: R=--CH 2 OSO 2 C 6 H 4 CH 3 and R'=--CH 2 OSO 2 C 6 H 4 CH 3 ; R=--CH 2 OCONHC 6 H 5 and R'=--CH 2 OCONHC 6 H 5 ; R=--(CH 2 ) 3 OCONHC 6 H 5 and R'=--(CH 2 ) 3 OCONHC 6 H 5 ; R=--(CH 2 ) 4 OCONHC 6 H 5 and R'=--(CH 2 ) 4 OCONHC 6 H 5 ; R=--(CH 2 ) 4 OCONHC 2 H 5 and R'=--(CH 2 ) 4 OCONHC 2 H 5 ; R=--(CH 2 ) 4 OCONHCH(CH 3 ) 2 and R'=--(CH 2 ) 4 OCONHCH(CH 3 ) 2 ; R=--CH 2 NC 12 H 8 and R'=--CH 2 NC 12 H 8 ; R=--(CH 2 ) 2 OH and R'=--(CH 2 ) 2 OH; R=--(CH 2 ) 3 OH and R'=--(CH 2 ) 3 OH; R=--COO(CH 2 ) 8 CH 3 and R'=--COO(CH 2 ) 8 CH 3 ; and R=--CH 2 OH and R'=--CH 3 .
Claim 4
Dependent Claim
220 words
Ion implanted polydiacetylene prepared by implanting ions of a chemical element into fully conjugated, fully ordered crystalline polydiacetylene at fluence levels from approximately 1×10 13 ions/cm 2 to about 1×10 17 ions/cm 2 , wherein the polydiacetylene is represented by the formula: ##STR6## wherein the R--R' pairs are selected from the group consisting of: R=--CH 2 OSO 2 C 6 H 4 CH 3 and R'=--CH 2 OSO 2 C 6 H 4 CH 3 ; R=--CH 2 OCONHC 6 H 5 and R'=--CH 2 OCONHC 6 H 5 ; R=--(CH 2 ) 3 OCONHC 6 H 5 and R'=--(CH 2 ) 3 OCONHC 6 H 5 ; R=--(CH 2 ) 4 OCONHC 6 H 5 and R'=--(CH 2 ) 4 OCONHC 6 H 5 ; R=--(CH 2 ) 4 OCONHC 2 H 5 and R'=--(CH 2 ) 4 OCONHC 2 H 5 ; R=--(CH 2 ) 4 OCONHCH(CH 3 ) 2 and R'=--(CH 2 ) 4 OCONHCH(CH 3 ) 2 ; R=--CH 2 NC 12 H 8 and R'=--CH 2 NC 12 H 8 ; R=--(CH 2 ) 2 OH and R'=--(CH 2 ) 2 OH; R=--(CH 2 ) 3 OH and R'=--(CH 2 ) 3 OH; R=--COO(CH 2 ) 8 CH 3 and R'=--COO(CH 2 ) 8 CH 3 ; and R=--CH 2 OH and R'=--CH 3 .
Claim 5
Dependent Claim
28 words
Electrically conductive ion implanted polydiacetylene in accordance with claim 2 wherein the fluence level is from about 1×10 14 ions/cm 2 to about 1×10 17 ions/cm 2 .
Claim 6
Dependent Claim
22 words
Ion implanted polydiacetylene in accordance with claim 2 wherein said ion implanted polydiacetylene is prepared by implanting arsenic ions into the polydiacetylene.
Claim 7
Dependent Claim
28 words
Electrically conductive ion implanted polydiacetylene in accordance with claim 4 wherein the fluence level is from about 1×10 14 ions/cm 2 to about 1×10 17 ions/cm 2 .
Claim 8
Dependent Claim
35 words
Ion implanted polydiacetylene in accordance with claim 4 wherein the R--R' pair is R=--CH 2 OSO 2 C 6 H 4 CH 3 and R'=--CH 2 OSO 2 C 6 H 4 CH 3 .
Claim 9
Dependent Claim
27 words
Ion implanted polydiacetylene in accordance with claim 4 wherein the R--R' pair is R=--CH 2 NC 12 H 8 and R'=--CH 2 NC 12 H 8 .
Claim 10
Dependent Claim
31 words
Ion implanted polydiacetylene in accordance with claim 4 wherein the R--R' pair is R=--(CH 2 ) 4 OCONHC 6 H 5 and R'=--(CH 2 ) 4 OCONHC 6 H 5 .
References Cited (Backward Citations)
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