Abstract A liquid encapsulation Czockralski method for growing a single crystal of a semiconductor compound which comprises: melting a semiconductor compound in the presence of a B2O3 liquid encapsulant to form a two phase liquid; dipping a semiconductor seed crystal into the compound melt covered with the B2O3 encapsulant; growing the crystal from the compound melt by pulling up and rotating the seed crystal; and, cooling the crystal in a cooling zone above a crucible. The cooling zone is maintained at a substantially uniform temperature distribution with a small temperature gradient by using primarily an independently controlled crystal cooling zone heater H3. In addition, an independently controlled melt heater H1 and an independently controlled crystal growing heater H2 are employed. Also, a crystal cooling zone heat shield 11 can be provided to aid in slowly cooling the grown crystal in the substantially uniform temperature distribution. Preferably, a crystal cooling zone heater H3 is employed to control the temperature distribution in the cooling zone. The semiconductor crystals produced by employing the process and apparatus of the invention are substantially crack-free both before and after grinding and cutting. Also the etch pitch density (EPD) of the semiconductor crystal material is significantly lower than conventionally produced material.
Inventors
👤 Kazuhisa Matsumoto
👤 Hiroshi Morishita
👤 Shinichi Akai
👤 Shintaro Miyazawa
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-11-07 13:18
CPC Classifications
C; C30; C30B; C30B15/00; C30B15/14
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
227 words
A liquid encapsulation method for growing single crystals of GaAs comprising the steps of: melting a semiconductor compound material and a liquid encapsulant material in a melt-heating zone of a crucible by applying heat to form a two-layered liquid, the two-layered liquid comprising a top layer of said liquid encapsulant material and a bottom layer of said semiconductor compound material; dipping a seed crystal into the two-layered liquid; growing a crystal from the semiconductor compound melt in a crystal-growth zone by pulling up and rotating the seed crystal; cooling the crystal in a temperature-controlled cooling zone above the crucible, the cooling zone being kept at a substantially uniform temperature distribution with a small temperature gradient to provide slow cooling; using a first heater to control the temperature in said melt-heating zone; using a second heater to control the temperature in said crystal growth zone; and, using a third temperature control means to control the temperature in said cooling zone and wherein the temperature gradients along the axis of the crystal are such that the temperature gradient between the surface of the liquid encapsulant and the cooling zone is 5° C./cm to 50° C./cm; and, the temperature gradient in the cooling zone is from about 0° C./cm up to 20° C./cm while the cooling zone temperature is controlled by said third temperature control means to 1000° C.-700° C.
Claim 2
Dependent Claim
227 words
A liquid encapsulation method for growing single crystals of GaAs comprising the steps of: melting a semiconductor compound material and a liquid encapsulant material in a melt-heating zone of a crucible by applying heat to form a two-layered liquid, the two-layered liquid comprising a top layer of said liquid encapsulant material and a bottom layer of said semiconductor compound material; dipping a seed crystal into the two-layered liquid; growing a crystal from the semiconductor compound melt in a crystal-growth zone by pulling up and rotating the seed crystal; cooling the crystal in a temperature-controlled cooling zone above the crucible, the cooling zone being kept at a substantially uniform temperature distribution with a small temperature gradient to provide slow cooling; using a first heater to control the temperature in said melt-heating zone; using a second heater to control the temperature in said crystal growth zone; and, using a third temperature control means to control the temperature in said cooling zone and wherein the temperature gradients along the axis of the crystal are such that the temperature gradient between the surface of the liquid encapsulant and the cooling zone is 5° C./cm to 50° C./cm; and, the temperature gradient in the cooling zone is from about 0° C./cm up to 20° C./cm while the cooling zone temperature is controlled by said third temperature control means to 1000° C.-700° C.
Claim 3
Dependent Claim
23 words
The method of claim 1 wherein the step of controlling the temperature of said cooling zone is accomplished by means of a heater.
Claim 4
Dependent Claim
23 words
The method of claim 1 wherein the step of controlling the temperature of said cooling zone is accomplished by means of a heat-shield.