US4644501A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory device with charging circuit
Assignee: Fujitsu Ltd
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Filing: 1984-12-10
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Granted: 1987-02-17
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Expires: 2004-12-10
Abstract
Abstract A semiconductor memory device, such as a mask ROM device, wherein precharge time is controlled by the chargeup level of a dummy bit line. The semiconductor memory device comprises a gate circuit for selecting a desired bit line, a dummy bit line having a chargeup characteristic equivalent to that of each of the bit lines, a dummy bit line chargeup circuit for charging the dummy bit line, and a chargeup circuit for charging up the selected bit line from the time the bit line is selected to the time the chargeup of the dummy bit line is finished, on the basis of the chargeup level of the dummy bit line, thereby enabling chargeup of the selected bit line for the necessary period without the intervention of excess time.
Inventors
- 👤 Masanori Nagasawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:25
CPC Classifications
G; G11; G11C; G11C17/00; G11C17/08; G11C17/10; G11C17/12; G11C7/00; G11C7/12; G11C7/14
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
206 words
A semiconductor memory device comprising: a plurality of bit lines; a gate circuit for selecting a desired bit line; a dummy bit line having a chargeup characteristic equivalent to that of each of said bit lines; a dummy bit line chargeup circuit for charging said dummy bit line; a chargeup circuit for charging up a selected bit line; and means responsive to selection of a desired bit line for starting operation of both said dummy bit line chargeup circuit and said selected bit line chargeup circuit, and for detecting a predetermined charge potential of said dummy bit line, said means comprising a clock generating circuit for generating a clock signal which becomes active from the time said bit line is selected to the time chargeup of said dummy bit line reaches said predetermined charge potential wherein said clock generating circuit comprises a first gate circuit for generating an output signal indicating that any bit line is selected and a second gate circuit which generates said clock signal based on said output signal from said first gate circuit and said predetermined charge potential level of said dummy bit line, to stop operation of both said chargeup circuits, thereby completing a precharge period for the selected bit line.
Claim 2
Dependent Claim
206 words
A semiconductor memory device comprising: a plurality of bit lines; a gate circuit for selecting a desired bit line; a dummy bit line having a chargeup characteristic equivalent to that of each of said bit lines; a dummy bit line chargeup circuit for charging said dummy bit line; a chargeup circuit for charging up a selected bit line; and means responsive to selection of a desired bit line for starting operation of both said dummy bit line chargeup circuit and said selected bit line chargeup circuit, and for detecting a predetermined charge potential of said dummy bit line, said means comprising a clock generating circuit for generating a clock signal which becomes active from the time said bit line is selected to the time chargeup of said dummy bit line reaches said predetermined charge potential wherein said clock generating circuit comprises a first gate circuit for generating an output signal indicating that any bit line is selected and a second gate circuit which generates said clock signal based on said output signal from said first gate circuit and said predetermined charge potential level of said dummy bit line, to stop operation of both said chargeup circuits, thereby completing a precharge period for the selected bit line.
Claim 3
Dependent Claim
37 words
A semiconductor memory device according to claim 1, wherein said first gate circuit is a NOR gate circuit and said second gate circuit includes a second NOR gate and an inverter connected to said second NOR gate.
Claim 4
Dependent Claim
39 words
A semiconductor memory device according to claim 1, wherein said gate circuit for selecting a desired bit line comprises a plurality of transfer gate transistors each connected between a bit line and an output terminal of said gate circuit.
Claim 5
Dependent Claim
68 words
A semiconductor memory device according to claim 1, wherein said gate circuit for selecting a desired bit line comprises a plurality of first groups of transfer gate transistors each group selecting a bit line among a group of bit lines, and a second group of transfer gate transistors for selecting a bit line among a plurality of bit lines selected by said first groups of transfer gate transistors.
Claim 6
Dependent Claim
79 words
A semiconductor memory device according to claim 1, wherein said chargeup circuit comprises a series connection of first and second transistors connected between first and second power terminals of a power source, the common connection point of said first and second transistors being connected to the output terminal of said gate circuit for selecting a desired bit line, said first transistor being turned on by said clock signal, and said second transistor being controlled by a chip enable signal.
Claim 7
Dependent Claim
31 words
A semiconductor memory device according to claim 5, wherein said chargeup circuit further comprises a third transistor connected in parallel to said first transistor and controlled by said chip enable signal.
Claim 8
Dependent Claim
37 words
A semiconductor memory device according to claim 1, wherein a plurality of memory cells are connected to each of said bit lines, and the same number of dummy memory cells are connected to said dummy bit line.
Claim 9
Dependent Claim
38 words
A semiconductor memory device according to claim 7, wherein said memory cells and said dummy memory cells are comprised of MOS transistors, said MOS transistors of said dummy memory cells are always kept in a turned off condition.
Claim 10
Dependent Claim
35 words
A semiconductor memory device according to claim 8, wherein thickness of gate insulation film of each of said MOS transistors of said memory cells is changed in accordance with data stored in said memory cell.
Claim 11
Dependent Claim
38 words
A semiconductor memory device according to claim 8, wherein an impurity concentration of a channel region of each of said MOS transistors of said memory cells is changed in accordance with the data stored in said memory cell.
Claim 12
Dependent Claim
182 words
A semiconductor memory device comprising: a plurality of bit lines; a gate circuit for selecting a desired bit line; a dummy bit line having a chargeup characteristic equivalent to that of said bit lines; a dummy bit line chargeup circuit for charging said dummy bit lines; a chargeup circuit for charging a selected bit line; and means responsive to selection of a desired bit line for starting operation of both said dummy bit line chargeup circuit and said selected bit line chargeup circuit, and for detecting a predetermined charge potential of said dummy bit line to stop operation of both said chargeup circuits, thereby completing a precharge period for said selected bit line; wherein said dummy bit line chargeup circuit comprises a series connection of first and second transistors connected between first and second power terminals of a power source, the common connection point of said first and second transistors being connected to said dummy bit line, said first transistor being turned on after the time said bit line is selected, and said second transistor being controlled by a chip enable signal.
Claim 13
Dependent Claim
182 words
A semiconductor memory device comprising: a plurality of bit lines; a gate circuit for selecting a desired bit line; a dummy bit line having a chargeup characteristic equivalent to that of said bit lines; a dummy bit line chargeup circuit for charging said dummy bit lines; a chargeup circuit for charging a selected bit line; and means responsive to selection of a desired bit line for starting operation of both said dummy bit line chargeup circuit and said selected bit line chargeup circuit, and for detecting a predetermined charge potential of said dummy bit line to stop operation of both said chargeup circuits, thereby completing a precharge period for said selected bit line; wherein said dummy bit line chargeup circuit comprises a series connection of first and second transistors connected between first and second power terminals of a power source, the common connection point of said first and second transistors being connected to said dummy bit line, said first transistor being turned on after the time said bit line is selected, and said second transistor being controlled by a chip enable signal.
Claim 14
Dependent Claim
41 words
A semiconductor memory device according to claim 11, wherein said common connection point is connected to said dummy bit line via a dummy transistor having the transfer characteristic equivalent to that of said gate circuit for selecting a desired bit line.
Claim 15
Dependent Claim
34 words
A semiconductor memory device according to claim 11, wherein said dummy bit line chargeup circuit further comprises a third transistor connected in parallel to said first transistor and controlled by said chip enable signal.
References Cited (Backward Citations)
US4044341A
Cited
US4371956A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-02-16 | 1990-08-18 | 1991-02-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-02-16 | 1994-08-18 | 1995-02-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-02-16 | 1998-08-18 | 1999-02-17 | $7700.00 | Window Closed / Lapsed |