US4642277A
Expired / Lapsed
US
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Photoconductive member having light receiving layer of A-Ge/A-Si and C
Assignee: Canon Inc
•
Filing: 1984-10-23
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Granted: 1987-02-10
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Expires: 2004-10-23
Abstract
Abstract A photoconductive member is provided which has substrate for photoconductive member and a light-receiving layer having photoconductivity with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity consisting of an amorphous material containing silicon atoms are successively provided from the aforesaid substrate side, said light-receiving layer containing carbon atoms together with a substance (C) for controlling conductivity in a distribution state such that, in said light-receiving layer, the maximum value C(PN) max of the distribution concentration of said substance (c) in the layer thickness direction exists within said second layer region (S) and, in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate.
Inventors
- 👤 Keishi Saitoh
- 👤 Yukihiko Ohnuki
- 👤 Shigeru Ohno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:37
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08221; G03G5/08228
Claims Analysis
Total Claims: 77
Claim 1
Independent Claim
153 words
A photoconductive member, having a substrate for photoconductive member and a light-receiving layer having photoconductivity with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and from 0.01 to 40 atomic percent of at least one of hydrogen or halogen atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms and from 1 to 40 atomic percent of at least one of hydrogen or halogen atoms are successively provided from the aforesaid substrate side, said light-receiving layer containing carbon atoms together with a substance (C) for controlling conductivity in a distribution state such that in said light-receiving layer, the maximum value C(PN) max of the distribution concentration of said substance (C) in the layer thickness direction exists within said second layer region (S) and, said substance (C) is in distributed in greater amount on the side of said substrate.
Claim 2
Dependent Claim
153 words
A photoconductive member, having a substrate for photoconductive member and a light-receiving layer having photoconductivity with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and from 0.01 to 40 atomic percent of at least one of hydrogen or halogen atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms and from 1 to 40 atomic percent of at least one of hydrogen or halogen atoms are successively provided from the aforesaid substrate side, said light-receiving layer containing carbon atoms together with a substance (C) for controlling conductivity in a distribution state such that in said light-receiving layer, the maximum value C(PN) max of the distribution concentration of said substance (C) in the layer thickness direction exists within said second layer region (S) and, said substance (C) is in distributed in greater amount on the side of said substrate.
Claim 3
Dependent Claim
17 words
A photoconductive member according to claim 1, wherein silicon atoms are contained in the layer region (G).
Claim 4
Dependent Claim
24 words
A photoconductive member according to claim 1, wherein the germanium atoms are distributed in the layer region (G) ununiformly in the layer thickness direction.
Claim 5
Dependent Claim
24 words
A photoconductive member according to claim 1, wherein the germanium atoms are distributed in the layer region (G) uniformly in the layer thickness direction.
Claim 6
Dependent Claim
26 words
A photoconductive member according to claim 2, wherein germanium atoms are distributed in the first layer region (G) more enriched on the side of said substrate.
Claim 7
Dependent Claim
26 words
A photoconductive member according to claim 1, wherein the substance (c) for controlling conductivity is an atom belonging to the group III of the periodic table.
Claim 8
Dependent Claim
26 words
A photoconductive member according to claim 1, wherein the substance (C) for controlling conductivity is an atom belonging to the group V of the periodic table.
Claim 9
Dependent Claim
49 words
A photoconductive member according to claim 3, wherein the maximum value of the distribution concentration Cmax in the layer thickness direction of germanium atoms in the first layer region (G) is 1000 atomic ppm or more based on the sum with silicon atoms in the first layer region (G).
Claim 10
Dependent Claim
29 words
A photoconductive member according to claim 1, wherein the germanium atoms are contained in the first layer region (G) at relatively higher concentration on the side of the substrate.
Claim 11
Dependent Claim
27 words
A photoconductive member according to claim 1, wherein the amount of germanium atoms contained in the first layer region (G) is 1 to 1×10 6 atomic ppm.
Claim 12
Dependent Claim
23 words
A photoconductive member according to claim 1, wherein the first layer region (G) has a layer thickness T B of 30 Åto 50μ.
Claim 13
Dependent Claim
22 words
A photoconductive member according to claim 1, wherein the second layer region (S) has a layer thickness T of 0.5 to 90μ.
Claim 14
Dependent Claim
39 words
A photoconductive member according to claim 1, wherein there is the relationship between the layer thickness T B of the first layer region (G) and the layer thickness T of the second layer region (S) of T B /T≦1.
Claim 15
Dependent Claim
42 words
A photoconductive member according to claim 1, wherein the layer thickness T B of the first layer region is 30μ or less, when the content of germanium atoms contained in the first layer region (G) is 1×10 5 atomic ppm or more.
Claim 16
Dependent Claim
31 words
A photoconductive member according to claim 1, wherein the substance (C) for controlling conductivity is contained throughout the entire region in the layer thickness direction of the second layer region (S).
Claim 17
Dependent Claim
29 words
A photoconductive member according to claim 1, wherein the substance (C) for controlling conductivity is contained in a part of the layer region in the second layer region (S).
Claim 18
Dependent Claim
30 words
A photoconductive member according to claim 1, wherein the substance (C) for controlling conductivity is contained in the end portion on the substrate side of the second layer region (S).
Claim 19
Dependent Claim
29 words
A photoconductive member according to claim 1, wherein the depth profile of the substance (c) in the layer thickness direction is increased toward the direction of the substrate side.
Claim 20
Dependent Claim
19 words
A photoconductive member according to claim 1, wherien the substance (C) is contained in the first layer region (G).
Claim 21
Dependent Claim
43 words
A photoconductive member according to claim 1, wherein the maximum distribution concentration of the substance C, C.sub.(G)max and C.sub.(S)max, in the layer thickness direction in the first layer region (G) and the second layer region (S), respectively, satisfy the relationship of C.sub.(G)max< C.sub.(S)max.
Claim 22
Dependent Claim
29 words
A Photoconductive member according to claim 6, wherein the atom belonging to the group III of the periodic table is selected from among B, Al, Ga, In and Tl.
Claim 23
Dependent Claim
28 words
A photoconductive member according to claim 7, wherein the atom belonging to the group V of the periodic table is selected from among P, As, Sb and Bi.
Claim 24
Dependent Claim
24 words
A photoconductive member according to claim 1, wherein the content of the substance (C) for controlling conductivity is 0.01 to 5×10 4 atomic ppm.
Claim 25
Dependent Claim
31 words
A photoconductive member according to claim 1, wherein the layer region (PN) containing the substance (C) strides on both of the first layer region (G) and the second layer region (S).
Claim 26
Dependent Claim
26 words
A photoconductive member according to claim 24, wherein the content of the substance (C) in the layer region (PN) is 0.01 to 5×10 4 atomic ppm.
Claim 27
Dependent Claim
46 words
A photoconductive member according to claim 24, wherein there is provided a layer region (Z) in contact with the layer region (PN), the layer region (Z) containing a substance (C) of the opposite polarity to that of the substance (C) contained in said layer region (PN).
Claim 28
Dependent Claim
21 words
A photoconductive member according to claim 1, wherein carbon atoms are contained throughout the whole layer region of the light-receiving layer.
Claim 29
Dependent Claim
23 words
A photoconductive member according to claim 1, wherein carbon atoms are contained in a part of the layer region of the light-receiving layer.
Claim 30
Dependent Claim
18 words
A photoconductive member according to claim 1, wherein carbon atoms are distributed ununiformly in the layer thickness direction.
Claim 31
Dependent Claim
21 words
A photoconductive member according to claim 1, wherein carbon atoms are distributed uniformly in the layer region of the light-receiving layer.
Claim 32
Dependent Claim
26 words
A photoconductive member according to claim 1, wherein carbon atoms are contained in the end portion layer region on the substrate side of the light-receiving layer.
Claim 33
Dependent Claim
31 words
A photoconductive member according to claim 1, wherein carbon atoms are contained in the layer region containing the interface between the first layer region (G) and the second layer region (S).
Claim 34
Dependent Claim
31 words
A photoconductive member according to claim 1, wherein carbon atoms are contained in the first layer region (G) at higher concentration in the end portion layer region on the substrate side.
Claim 35
Dependent Claim
28 words
A photoconductive member according to claim 1, wherein carbon atoms are distributed at higher concentrations on the substrate side and the free surface side of the light-receiving layer.
Claim 36
Dependent Claim
32 words
A photoconductive member according to claim 1, wherein the depth profile of carbon atom distribution concentration in the layer thickness direction in the light-receiving layer has a portion which is continuously changed.
Claim 37
Dependent Claim
48 words
A photoconductive member according to claim 1, wherein carbon atoms are contained in the layer region (C) at a proportion of 0.001 to 50 atomic ppm based on the sum T(SiGeC) of the three atoms of silicon atoms, germanium atoms and carbon atoms in said layer region (C).
Claim 38
Dependent Claim
71 words
A photoconductive member according to claim 1, wherein the upper limit of the carbon atoms contained in said layer region (C) is not more than 30 atomic ppm based on the sum T(SiGeC) of the three atoms of silicon atoms, germanium atoms and carbon atoms in said layer region (C), when the layer thickness To containing carbon atoms comprises 2/5 or more of the layer thickness T of the light-receiving layer.
Claim 39
Dependent Claim
55 words
A photoconductive member according to claim 1, wherein the maximum value Cmax of carbon atoms of the distribution concentration in the layer thickness direction is 500 atomic ppm or more based on the sum T(SiGeC) of the three atoms of silicon atoms, germanium atoms and carbon atoms in the layer region (c) containing carbon atoms.
Claim 40
Dependent Claim
55 words
A photoconductive member according to claim 1, wherein the maximum value Cmax of carbon atoms of the distribution concentration in the layer thickness direction is 67 atomic ppm or less based on the sum T(SiGeC) of the three atoms of silicon atoms, germanium atoms and carbon atoms in the layer region (C) containing carbon atoms.
Claim 41
Dependent Claim
177 words
A photoconductive member, having a substrate for photoconductive member and a light-receiving layer comprising a first layer (I) with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and from 0.01 to 40 weight percent of at least one of hydrogen or halogen atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms and 1 to 40 atomic percent of at least one of hydrogen or halogen atoms are successively provided from the aforesaid substrate side and a second layer (II) comprising an amorphous material containing silicon atoms and at least one of nitrogen atoms and oxygen atoms, said first layer (I) containing carbon atoms together with a substance for controlling conductivity (C) in a distribution state such that in said light-receiving layer, the maximum value of the distribution concentration in the layer thickness direction exists within said second layer region (S) and in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate.
Claim 42
Dependent Claim
177 words
A photoconductive member, having a substrate for photoconductive member and a light-receiving layer comprising a first layer (I) with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and from 0.01 to 40 weight percent of at least one of hydrogen or halogen atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms and 1 to 40 atomic percent of at least one of hydrogen or halogen atoms are successively provided from the aforesaid substrate side and a second layer (II) comprising an amorphous material containing silicon atoms and at least one of nitrogen atoms and oxygen atoms, said first layer (I) containing carbon atoms together with a substance for controlling conductivity (C) in a distribution state such that in said light-receiving layer, the maximum value of the distribution concentration in the layer thickness direction exists within said second layer region (S) and in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate.
Claim 43
Dependent Claim
18 words
A photoconductive member according to claim 40, wherein silicon atoms are contained in the first layer region (G).
Claim 44
Dependent Claim
25 words
A photoconductive member according to claim 40, wherein the germanium atoms are distributed in the first layer region (G) ununiformly in the layer thickness direction.
Claim 45
Dependent Claim
25 words
A photoconductive member according to claim 40, wherein the germanium atoms are distributed in the first layer region (G) uniformly in the layer thickness direction.
Claim 46
Dependent Claim
26 words
A photoconductive member according to claim 40, wherein germanium atoms are distributed in the first layer region (G) more enriched on the side of said substrate.
Claim 47
Dependent Claim
26 words
A photoconductive member according to claim 40, wherein the substance (C) for controlling conductivity is an atom belonging to the group III of the periodic table.
Claim 48
Dependent Claim
26 words
A photoconductive member according to claim 40, wherein the substance (C) for controlling conductivity is an atom belonging to the group V of the periodic table.
Claim 49
Dependent Claim
49 words
A photoconductive member according to claim 42, wherein the maximum value of the distribution concentration Cmax in the layer thickness direction of germanium atoms in the first layer region (G) is 1000 atomic ppm or more based on the sum with silicon atoms in the first layer region (G).
Claim 50
Dependent Claim
28 words
A photoconductive member according to claim 48, wherein germanium atoms are contained in the first layer region (G) at relatively higher concentration on the side of the substrate.
Claim 51
Dependent Claim
27 words
A photoconductive member according to claim 40, wherein the amount of germanium atoms contained in the first layer region (G) is 1 to 1×10 6 atomic ppm.
Claim 52
Dependent Claim
23 words
A photoconductive member according to claim 40, wherein the first layer region (G) has a layer thickness T B of 30 to 50μ.
Claim 53
Dependent Claim
22 words
A photoconductive member according to claim 40, wherein the second layer region (S) has a layer thickness T of 0.5 to 90μ.
Claim 54
Dependent Claim
39 words
A photoconductive member according to claim 40, wherein there is the relationship between the layer thickness T B of the first layer region (G) and the layer thickness T of the second layer region (S) of T B /T<1.
Claim 55
Dependent Claim
42 words
A photoconductive member accoridng to claim 40, wherein the layer thickness T B of the first layer region is 30μ or less, when the content of germanium atoms contained in the first layer region (G) is 1×10 5 atomic ppm or more.
Claim 56
Dependent Claim
31 words
A photoconductive member according to claim 40, wherein the substance (C) for controlling conductivity is contained throughout the entire region in the layer thickness direction of the second layer region (S).
Claim 57
Dependent Claim
29 words
A photoconductive member according to claim 40, wherein the substance (C) for controlling conductivity is contained in a part of the layer region in the second layer region (S).
Claim 58
Dependent Claim
33 words
A photoconductive member according to claim 40, wherein the layer region (PN) containing the substance (C) for controlling conductivity comprises the end portion on the substrate side of the second layer region (S).
Claim 59
Dependent Claim
29 words
A photoconductive member according to claim 40, wherein the depth profile of the substance (C) in the layer thickness direction is increased toward the direction of the substrate side.
Claim 60
Dependent Claim
18 words
A photoconductive member according to claim 40, wherein the substance is contained in the first layer region (G).
Claim 61
Dependent Claim
43 words
A photoconductive member according to claim 40, wherein the maximum distribution concentration of the substance C, C.sub.(G)max and C.sub.(S)max, in the layer thickness direction in the first layer region (G) and the second layer region (S), respectively, satisfy the relationship of C.sub.(G)max <C.sub.(S)max.
Claim 62
Dependent Claim
29 words
A photoconductive member according to claim 45, wherein the atom belonging to the group III of the periodic table is selected from among B, Al, Ga, In and Tl.
Claim 63
Dependent Claim
28 words
A photoconductive member according to claim 46, wherein the atom belonging to the group V of the periodic table is selected from among P, As, Sb and Bi.
Claim 64
Dependent Claim
24 words
A photoconductive member according to claim 40, wherein the content of the substance (C) for controlling conductivity is 0.01 to 5×10 4 atomic ppm.
Claim 65
Dependent Claim
31 words
A photoconductive member according to claim 40, wherein the layer region (PN) containing the substance (C) strides on both of the first layer region (G) and the second layer region (S).
Claim 66
Dependent Claim
26 words
A photoconductive member according to claim 63, wherein the content of the substance (C) in the layer region (PN) is 0.01 to 5×10 4 atomic ppm.
Claim 67
Dependent Claim
46 words
A photoconductive member according to claim 63, wherein there is provided a layer region (Z) in contact with the layer region (PN), the layer region (Z) containing a substance (C) of the opposite polarity to that of the substance (C) contained in said layer region (PN).
Claim 68
Dependent Claim
73 words
A photoconductive member according to claim 40, wherein the upper limit of the carbon atoms contained in said layer region (C) is not more than 30 atomic ppm based on the sum T(SiGeC) of the three atoms of silicon atoms, germanium atoms and carbon atoms in said layer region (C), when the layer thickness T o containing carbon atoms comprises 2/5 or more of the layer thickness T of the first layer (I).
Claim 69
Dependent Claim
55 words
A photoconductive member according to claim 40, wherein the maximum value Cmax of carbon atoms of the distribution concentration in the layer thickness direction is 500 atomic ppm or more base on the sum T(SiGeC) of the three atoms of silicon atoms, germanium atoms and carbon atoms in the layer region (C) containing carbon atoms.
Claim 70
Dependent Claim
55 words
A photoconductive member according to claim 40, wherein the maximum value Cmax of carbon atoms of the distributed concentration in the layer thickness direction is 67 atomic ppm or less based on the sum T(SiGeC) of the three atoms of silicon atoms, germanium atoms and carbon atoms in the layer region (C) containing carbon atoms.
Claim 71
Dependent Claim
36 words
A photoconductive member according to claim 40, wherein the amorphous material constituting the second layer (II) is an amorphous material represented by the following formula: a-(Si.sub.x N.sub.1-x).sub.y (H,X).sub.1-y (where 0<x, y<1, X is a halogen atom).
Claim 72
Dependent Claim
36 words
A photoconductive member according to claim 40, wherein the amorphous material constituting the second layer (II) is an amorphous material represented by the following formula: a-(Si.sub.x O.sub.1-x).sub.y (H,X).sub.1-y (where 0<x, y<1, X is a halogen atom).
Claim 73
Dependent Claim
20 words
A photoconductive member according to claim 40, wherein the second layer (II) has a layer thickness of 0.003 to 30μ.
Claim 74
Dependent Claim
184 words
An electrophotographic process comprising: (a) applying a charging treatment to a photoconductive member having a substrate for photoconductive member and a light-receiving layer having photoconductivity with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and from 0.01 to 40 atomic percent of at least one of hydrogen or halogen atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms and from 1 to 40 percent of at least one of hydrogen or halogen atoms are successively provided from the aforesaid substrate side, said light-receiving layer containing carbon atoms together with a substance (C) for controlling conductivity in a distribution state such that, in said light-receiving layer, the maximum value C(PN) max of the distribution concentration of said substance (C) in the layer thickness direction exists within said second layer region (S) and, in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate; and (b) irradiating the photoconductive member with an electromagnetic wave carrying information, thereby forming an electrostatic image.
Claim 75
Dependent Claim
184 words
An electrophotographic process comprising: (a) applying a charging treatment to a photoconductive member having a substrate for photoconductive member and a light-receiving layer having photoconductivity with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and from 0.01 to 40 atomic percent of at least one of hydrogen or halogen atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms and from 1 to 40 percent of at least one of hydrogen or halogen atoms are successively provided from the aforesaid substrate side, said light-receiving layer containing carbon atoms together with a substance (C) for controlling conductivity in a distribution state such that, in said light-receiving layer, the maximum value C(PN) max of the distribution concentration of said substance (C) in the layer thickness direction exists within said second layer region (S) and, in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate; and (b) irradiating the photoconductive member with an electromagnetic wave carrying information, thereby forming an electrostatic image.
Claim 76
Dependent Claim
206 words
An electrophotographic process comprising: (a) applying a charging treatment to a photoconductive member having a substrate for a photoconductive member and a light receiving layer comprising a first layer (I) with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and from 0.01 to 40 weight percent of at least one of hydrogen or halogen atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms and 1 to 40 weight percent of at least one of hydrogen or halogen atoms are successively provided from the aforesaid substrate side and a second layer (II) comprising an amorphous material containing silicon atoms and at least one of nitrogen atoms and oxygen atoms, said first layer (I) containing carbon atoms together with a substance for controlling conductivity (C) in a distribution state such that in said light-receiving layer, the maximum value of the distribution concentration in the layer thickness direction exists within said second layer region (S) and in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate; and (b) irradiating the photoconductive member with an electromagnetic wave carrying information, thereby forming an electrostatic image.
Claim 77
Dependent Claim
206 words
An electrophotographic process comprising: (a) applying a charging treatment to a photoconductive member having a substrate for a photoconductive member and a light receiving layer comprising a first layer (I) with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and from 0.01 to 40 weight percent of at least one of hydrogen or halogen atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms and 1 to 40 weight percent of at least one of hydrogen or halogen atoms are successively provided from the aforesaid substrate side and a second layer (II) comprising an amorphous material containing silicon atoms and at least one of nitrogen atoms and oxygen atoms, said first layer (I) containing carbon atoms together with a substance for controlling conductivity (C) in a distribution state such that in said light-receiving layer, the maximum value of the distribution concentration in the layer thickness direction exists within said second layer region (S) and in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate; and (b) irradiating the photoconductive member with an electromagnetic wave carrying information, thereby forming an electrostatic image.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1990-02-09 | 1990-08-11 | 1991-02-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-02-09 | 1994-08-11 | 1995-02-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-02-09 | 1998-08-11 | 1999-02-10 | $7700.00 | Window Closed / Lapsed |