Ion implantation apparatus and method for maskless processing

Claim 1

A method of processing a substrate by selective ion implanting directly to patterns on the substrate using a focused ion beam without using masks and scanning a focused ion beam in a step by step movement, said method comprising the steps of: determining the starting and ending points of said scanned substrate measuring an ion beam current by a probe; selecting a clock frequency from an output frequency of a variable frequency oscillator whose frequency can be varied continuously, said clock frequency for scanning said focused ion beam in a step by step movement and a scanning number based upon said measured ion current for providing a predetermined dosage; and performing said processing of said substrate with said ion beam by the selected combination of said clock frequency and said scanning number.

Claim 2

A method of processing a substrate by selective ion implanting directly to patterns on the substrate using a focused ion beam without using masks and scanning a focused ion beam in a step by step movement, said method comprising the steps of: determining the starting and ending points of said scanned substrate measuring an ion beam current by a probe; selecting a clock frequency from an output frequency of a variable frequency oscillator whose frequency can be varied continuously, said clock frequency for scanning said focused ion beam in a step by step movement and a scanning number based upon said measured ion current for providing a predetermined dosage; and performing said processing of said substrate with said ion beam by the selected combination of said clock frequency and said scanning number.

Claim 6

An apparatus for implanting a dopant material into a substrate of semiconductive material by selective ion implanting directly to patterns on the substrate using a focused ion beam without utilizing a mask, said apparatus comprising: a focused controlling system focusing an ion beam; a deflector deflecting and scanning said ion beam from a determined starting and ending point on said substrate; means for measuring said emitted ion beam current; a pattern generator connected to said deflector for applying a deflection voltage to said deflector; a continuously variable frequency oscillator generating a clock signal having a frequency which determines reflection speed to said pattern generator; and a central processing unit (CPU) system determining said clock frequency and scanning number based upon said measured ion current, which corresponding to a predetermined implantation dosage, said CPU controlling said continuously variable frequency oscillator in order to generate said clock frequency, and said CPU controlling said deflector by said clock frequency and scanning number.

Claim 7

An apparatus for implanting a dopant material into a substrate of semiconductive material by selective ion implanting directly to patterns on the substrate using a focused ion beam without utilizing a mask, said apparatus comprising: a focused controlling system focusing an ion beam; a deflector deflecting and scanning said ion beam from a determined starting and ending point on said substrate; means for measuring said emitted ion beam current; a pattern generator connected to said deflector for applying a deflection voltage to said deflector; a continuously variable frequency oscillator generating a clock signal having a frequency which determines reflection speed to said pattern generator; and a central processing unit (CPU) system determining said clock frequency and scanning number based upon said measured ion current, which corresponding to a predetermined implantation dosage, said CPU controlling said continuously variable frequency oscillator in order to generate said clock frequency, and said CPU controlling said deflector by said clock frequency and scanning number.