Semiconductor memory having charge transfer device voltage amplifier

Claim 2

A semiconductor device comprising a memory array which includes a plurality of memory cells storing charge carriers as information data, address means for selecting at least one of the memory cells, data lines which are coupled to the memory cells to transfer the charge carriers as the information data therethrough, means for writing the information data into the memory cells coupled to said data lines, and means for reading out the information data from the memory cells coupled to said data lines; said reading-out means being comprised of a reset gate transistor coupled to said data line, a charge transfer portion coupled to said data lines, a precharge gate transistor at an output end of said charge transfer portion, and a sense amplifier coupled to said output end; said charge transfer portion including at least two charge transfer gates and a driving gate disposed between the two charge transfer gates; wherein a terminal of said reset gate transistor is coupled to means for applying a voltage which is lower when electrons are used as the charge carriers or higher when holes are used as the charge carriers, than a magnitude obtained by subtracting a threshold voltage of the charge transfer gate on a data line side of said charge transfer gates from a highest value of a voltage that is applied to said charge transfer gate on a data line side.

Claim 3

A semiconductor device according to claim 1, wherein said sense amplifier is an amplifier which detects a voltage.

Claim 4

A semiconductor device according to claim 1, wherein a capacitance C I of an input end of said sense amplifier is related to a capacitance C D of said data line and a capacitance C 1 of the charge driving gate as follows: C.sub.D >C.sub.1 ≧C.sub.I.

Claim 5

A semiconductor device comprising a memory array which includes a plurality of memory cells storing charge carriers as information data, address means for selecting at least one of the memory cells, data lines which are coupled to the memory cells to transfer the charge carriers as the information data therethrough, means for writing the information data into the memory cells coupled to said data lines, and means for reading out the information data from the memory cells coupled to said data lines; said reading-out means being comprised of a reset gate transistor coupled to said data lines, a charge transfer portion coupled to said data lines, a precharge gate transistor at an output end of said charge transfer portion, and a sense amplifier coupled to said output end; said charge transfer portion including at least two charge transfer gates and a driving gate disposed between the two charge transfer gates; wherein letting V ThT1 denote a threshold voltage of a first charge transfer gate on the data line side of said charge transfer gates, V ThT2 denotes a threshold voltage of said driving gate and V ThT3 denotes a threshold voltage of a second charge transfer gate on the sense amplifier side of said charge transfer gates, the threshold voltage of said respective gates are selected to establish the relationship of: V.sub.ThT1 >V.sub.ThT3 >V.sub.ThT2 ( 1a) when electrons are used as the charge carriers, or to establish the relationship of: V.sub.ThT1 <V.sub.ThT3 <V.sub.ThT2 ( 1b) when holes are used as the charge carriers.

Claim 6

A semiconductor device comprising a memory array which includes a plurality of memory cells storing charge carriers as information data, address means for selecting at least one of the memory cells, data lines which are coupled to the memory cells to transfer the charge carriers as the information data therethrough, means for writing the information data into the memory cells coupled to said data lines, and means for reading out the information data from the memory cells coupled to said data lines; said reading-out means being comprised of a reset gate transistor coupled to said data lines, a charge transfer portion coupled to said data lines, a precharge gate transistor at an output end of said charge transfer portion, and a sense amplifier coupled to said output end; said charge transfer portion including at least two charge transfer gates and a driving gate disposed between the two charge transfer gates; wherein letting V ThT1 denote a threshold voltage of a first charge transfer gate on the data line side of said charge transfer gates, V ThT2 denotes a threshold voltage of said driving gate and V ThT3 denotes a threshold voltage of a second charge transfer gate on the sense amplifier side of said charge transfer gates, the threshold voltage of said respective gates are selected to establish the relationship of: V.sub.ThT1 >V.sub.ThT3 >V.sub.ThT2 ( 1a) when electrons are used as the charge carriers, or to establish the relationship of: V.sub.ThT1 <V.sub.ThT3 <V.sub.ThT2 ( 1b) when holes are used as the charge carriers.

Claim 7

A semiconductor device according to claim 4, wherein said driving gate is of a depletion type.

Claim 8

A semiconductor device according to claim 4, wherein V.sub.φH denotes a high level of a pulse which is impressed on said charge transfer portion, V.sub.φL denotes a low level of said pulse, and the threshold voltages of said respective gates on which said pulse is impressed are selected to establish the relationship of: V.sub.φH -V.sub.ThT1 >V.sub.φL -V.sub.ThT3 ( 2a) in the case of transferring the electrons as the charge carriers, or to establish the relationship of: V.sub.φL -V.sub.ThT1 <V.sub.φH -V.sub.ThT3 ( 2b) in the case of transferring the holes as the charge carriers.

Claim 9

A semiconductor memory comprising: a memory cell and a dummy cell each coupled to a pair of data lines, said memory cell and said dummy cell each including means for storing respective signal charges as information data, the amount of the signal charges in said memory cell being different than that of said dummy cell; a word line coupled to the memory cell and a dummy word line coupled to the dummy cell; read-out means coupled to said word line and said dummy word line to couple the signal charges of said memory cell to one of said pair of data lines and to couple the signal charges of said dummy cell to the other of said pair of data lines for a read-out operation; a sense amplifier coupled to both of said data lines to amplify voltage differences between said data lines; charge supply means and charge transfer means coupled to both of said data lines between said sense amplifier and said memory cell and dummy cell; means for driving said charge transfer means to transfer signal charges on said data lines from said memory cell and said dummy cell to said sense amplifier; and means for driving the charge supply means to provide equal quantities of carrier charges to both of said data lines prior to transfer of said signal charges to accelerate the transfer of said signal charges to said sense amplifier.

Claim 10

A semiconductor memory comprising: a memory cell and a dummy cell each coupled to a pair of data lines, said memory cell and said dummy cell each including means for storing respective signal charges as information data, the amount of the signal charges in said memory cell being different than that of said dummy cell; a word line coupled to the memory cell and a dummy word line coupled to the dummy cell; read-out means coupled to said word line and said dummy word line to couple the signal charges of said memory cell to one of said pair of data lines and to couple the signal charges of said dummy cell to the other of said pair of data lines for a read-out operation; a sense amplifier coupled to both of said data lines to amplify voltage differences between said data lines; charge supply means and charge transfer means coupled to both of said data lines between said sense amplifier and said memory cell and dummy cell; means for driving said charge transfer means to transfer signal charges on said data lines from said memory cell and said dummy cell to said sense amplifier; and means for driving the charge supply means to provide equal quantities of carrier charges to both of said data lines prior to transfer of said signal charges to accelerate the transfer of said signal charges to said sense amplifier.

Claim 11

A semiconductor memory according to claim 7, wherein said charge supply means comprises a pair of capacitors coupled in series between said data lines and a driving line coupled to said means for driving said charge supply means, said driving line being coupled to a junction between said pair of capacitors.

Claim 12

A semiconductor memory according to claim 8, wherein said charge transfer means comprises a first charge transfer gate coupled to one of said data lines and a second charge transfer gate coupled to the other of said data lines for controlling the passage of said signal charges to said sense amplifier.

Claim 13

A semiconductor memory according to claim 8, wherein said pair of capacitors comprises first and second MOS transistors, said first MOS transistor having its gate coupled to one of said data lines, said second MOS transistor having its gate coupled to the other of said data lines, and both of said MOS transistors having their sources and drains shorted together and coupled to the source and drain of the other MOS transistor.

Claim 14

A semiconductor memory according to claim 7, wherein said charge transfer means comprises a first charge transfer gate coupled to one of said data lines and a second charge transfer gate coupled to the other of said data lines for controlling the passage of said signal charges to said sense amplifier.

Claim 15

A semiconductor memory according to claim 7, further comprising a reset gate circuit coupled to said data lines between said memory cell and dummy cell and said charge transfer means and a precharge circuit coupled to said data lines between said charge transfer means and said sense amplifier.

Claim 16

A semiconductor memory according to claim 7, wherein said charge transfer means is comprised of first and second charge gates coupled along one of said data lines with a driving gate disposed between said first and second charge gates and third and fourth charge gates coupled along the other of said data lines with a driving gate disposed between said third and fourth charge gates.

Claim 17

A semiconductor memory according to claim 7, wherein said charge supply means is constructed to have the same circuit arrangement as said dummy cell.

Claim 18

A semiconductor memory according to claim 7, wherein said charge supply means includes: a first capacitor coupled to a supply voltage and to a first one of said pair of data lines by a first charge transfer transistor; a second capacitor coupled to said supply voltage and coupled to the other of said pair of data lines by a second charge transfer transistor; a first capacitor potential reset transistor coupled to the first capacitor; and a second capacitor potential reset transistor coupled to said second capacitor.

Claim 19

A semiconductor memory according to claim 15, wherein said dummy cell has the same circuit arrangement as said charge supply means.

Claim 20

A semiconductor memory according to claim 15, wherein said charge supply means includes a pair of said first capacitors coupled to said one of said data lines by respective ones of a pair of first charge transfer transistors and further coupled to respective ones of a pair of first capacitor potential reset transistors, and wherein said charge supply means further includes a pair of second capacitors coupled to the other of said pair of data lines by respective ones of a pair of second charge transfer transistors and further coupled to respective ones of a pair of second capacitor potential reset transistors.

Claim 21

A semiconductor memory according to claim 15, wherein said first capacitor potential reset transistor is an IGFET coupled to have a source-drain path between the first capacitor and a ground potential and to have a gate coupled to receive a reset signal, and wherein said second capacitor potential reset transistor is an IGFET coupled to have a source-drain path between the second capacitor and the ground potential and to have a gate coupled to receive said reset signal.

Claim 22

A semiconductor device comprising a memory array which includes a plurality of memory cells to store signal charges as information data, address means for selecting the respective memory cells, data lines which are coupled to the memory cells to transfer the signal charges therethrough, means for writing information into the memory cells and means for reading information from the memory cells, wherein said reading means for each of said memory cells comprises: a charge supply circuit coupled to a data line at the output of said memory cell; a charge transfer circuit coupled to the data line at the output of the charge supply circuit; a sense amplifier coupled to the data line at the output of the charge transfer circuit; means for driving the charge transfer circuit to transfer siganl charges on said data line from the memory cell to the sense amplifier; and means for driving the charge supply circuit to provide a quantity of charges to said data line prior to transfer of the signal charges to accelerate the transfer of the signal charges to said sense amplifier.

Claim 23

A semiconductor device comprising a memory array which includes a plurality of memory cells to store signal charges as information data, address means for selecting the respective memory cells, data lines which are coupled to the memory cells to transfer the signal charges therethrough, means for writing information into the memory cells and means for reading information from the memory cells, wherein said reading means for each of said memory cells comprises: a charge supply circuit coupled to a data line at the output of said memory cell; a charge transfer circuit coupled to the data line at the output of the charge supply circuit; a sense amplifier coupled to the data line at the output of the charge transfer circuit; means for driving the charge transfer circuit to transfer siganl charges on said data line from the memory cell to the sense amplifier; and means for driving the charge supply circuit to provide a quantity of charges to said data line prior to transfer of the signal charges to accelerate the transfer of the signal charges to said sense amplifier.

Claim 24

A semiconductor device according to claim 19, wherein said charge transfer circuit comprises a pair of charge gates coupled along said data line with a driving gate coupled between said charge gates.

Claim 25

A semiconductor device according to claim 19, wherein a pair of data lines are coupled between said memory cell and said sense amplifier with the charge supply circuit and the charge transfer circuit being coupled to both of said data lines.

Claim 26

A semiconductor device according to claim 21, wherein said charge supply circuit comprises first and second capacitors coupled in series between said pair of data lines, said first and second capacitors being coupled to a first control line at a junction between the first and second capacitors, and third and fourth capacitors coupled in series between said pair of data lines, said third and fourth capacitors being coupled to a second control line at a junction between said third and fourth capacitors.

Claim 27

A semiconductor device according to claim 22, wherein said charge transfer circuit is comprised of first and second charge gates coupled along one of said data lines with a driving gate disposed between said first and second charge gates and third and fourth charge gates coupled along the other of said data lines with a driving gate disposed between said third and fourth charge gates.

Claim 28

A semiconductor device according to claim 23, further comprising a reset gate circuit coupled to said data lines between said charge supply means and said charge transfer means and a precharge circuit coupled to said data lines between said charge transfer means and said sense amplifier.

Claim 29

A semiconductor device according to claim 19, further comprising a reset gate circuit coupled to said data line between said memory cell and said charge transfer circuit, and a precharge circuit coupled to said data line between said charge transfer circuit and said sense amplifier.

Claim 30

A semiconductor memory according to claim 19, wherein said charge supply means includes a first capacitor coupled to a supply voltage and coupled to said data line by a first charge transfer transistor, and wherein said charge supply means further includes a first capacitor potential reset transistor coupled to said first capacitor.

Claim 31

A semiconductor memory according to claim 26, wherein said first capacitor potential reset transistor is an IGFET having a source-drain path coupled between said first capacitor and ground potential and having a gate coupled to receive a reset signal.

Claim 32

A semiconductor memory comprising: a memory cell coupled to a data line, said memory cell including storing means for signal charges; a word line coupled to the memory cell; address means coupled to said word line to couple said storing means of the memory cell to said data line; a sense amplifier coupled to said data line; charge supply means and charge transfer means provided between said sense amplifier and said memory cell; means for driving said charge transfer means to transfer signal charges on said data line from said memory cell to said sense amplifier; and means for driving said charge supply means to provide a quantity of charges to said data line prior to transfer of the signal charges to said sense amplifier.

Claim 33

A semiconductor memory comprising: a memory cell coupled to a data line, said memory cell including storing means for signal charges; a word line coupled to the memory cell; address means coupled to said word line to couple said storing means of the memory cell to said data line; a sense amplifier coupled to said data line; charge supply means and charge transfer means provided between said sense amplifier and said memory cell; means for driving said charge transfer means to transfer signal charges on said data line from said memory cell to said sense amplifier; and means for driving said charge supply means to provide a quantity of charges to said data line prior to transfer of the signal charges to said sense amplifier.

Claim 34

A semiconductor memory according to claim 28, wherein said charge supply means comprises a capacitor coupled to said data line and a driving line coupled to said means for driving said charge supply means, said driving line being coupled to said capacitor.

Claim 35

A semiconductor memory according to claim 29, wherein said charge transfer means comprises a pair of charge transfer gates coupled along said data line for controlling the passage of said signal charges to said sense amplifier.

Claim 36

A semiconductor memory according to claim 28, wherein said charge transfer means comprises a pair of charge transfer gates coupled along said data line for controlling the passage of said signal charges to said sense amplifier.

Claim 37

A semiconductor memory according to claim 28, wherein said capacitor comprises a first MOS transistor, said first MOS transistor having its gate coupled to said data line and its source and drain shorted together.

Claim 38

A semiconductor memory according to claim 28, further comprising a reset gate circuit coupled to said data line, wherein said charge transfer means and a precharge circuit are coupled to said data line between said charge transfer means and said sense amplifier.