Semiconductor memory device

Claim 2

A semiconductor memory device including memory cells formed in a semiconductor substrate, and an insulating layer formed on the semiconductor substrate, each of the memory cells comprising: a switching transistor formed in the semiconductor substrate; and a storage capacitor, formed in and on the semiconductor substrate and on the insulating layer, an impurity-doped getter region of a conductivity type opposite to that of the semiconductor substrate being formed in the semiconductor substrate, in contact with the insulating layer, and below said storage capacitor, for collecting minority carriers so as to avoid soft errors.

Claim 3

A semiconductor memory device according to claim 1, operatively connectable to a power supply, wherein said impurity-doped getter region for collecting minority carriers is connected to one of the potentials of the power supply.

Claim 4

A semiconductor memory device according to claim 1, further comprising a plurality of the impurity-doped getter regions formed in the semiconductor substrate, in contact with the insulating layer and below said storage capacitor, wherein said plurality of impurity-doped getter regions for collecting minority carriers are connected to each other and are in a floating state.

Claim 5

A semiconductor memory device according to claim 1, further comprising a channel cut region having a conductivity opposite that of said impurity-doped getter region and highly doped with an impurity, wherein said impurity-doped getter region is surrounded by said channel cut region.

Claim 6

A semiconductor memory device according to claim 1, wherein the semiconductor substrate includes an active region formed therein, and wherein said storage capacitor comprises a silicon dioxide layer formed on the semiconductor substrate, and upper and lower layers of polysilicon for forming electrodes for sandwiching the silicon dioxide layer, the lower polysilicon layer of the storage capacitor contacting the active region of the semiconductor substrate.

Claim 7

A semiconductor memory device according to claim 1, wherein said storage capacitor comprises a silicon dioxide layer, a layer of polysilicon forming an electrode and a layer of metal silicide forming an electrode, both the polysilicon and metal silicide layers sandwiching the silicon dioxide layer.

Claim 8

A semiconductor memory device according to claim 1, wherein said storage capacitor comprises a silicon nitride layer, a layer of polysilicon forming a first electrode and a layer of metal silicide forming a second electrode, said first and second electrodes sandwiching the silicon nitride layer.

Claim 9

A semiconductor memory device according to claim 1, wherein said storage capacitor comprises a polysilicon layer and two layers of metal silicide forming electrodes sandwiching the polysilicon layer.

Claim 10

A semiconductor memory device according to claim 1, wherein said storage capacitor comprises a silicon nitride layer and two layers of metal silicide forming electrodes sandwiching the silicon nitride layer.

Claim 11

A semiconductor memory device according to claim 1, wherein the semiconductor substrate is a p-type silicon semiconductor substrate.

Claim 12

A semiconductor memory device according to claim 4, further comprising a field oxide layer having a peripheral portion and a central portion, the central portion of the field oxide layer being formed between said storage capacitor and said impurity-doped getter region and being thinner than the peripheral portion of the field oxide layer, said channel cut region being formed below the peripheral portion, and said impurity-doped getter region being formed below the central portion, whereby an electrode of said storage capacitor formed contacting the insulating layer, the central portion of the field oxide layer, and said impurity-doped getter region form said storage capacitor of each of the memory cells.

Claim 13

A semiconductor device according to claim 11, wherein the central and peripheral portion of said field oxide layer have an entirely flat upper surface and a major part of the peripheral portion of said field oxide layer is located in the semiconductor substrate.

Claim 14

A semiconductor memory device including memory cells formed in a semiconductor substrate, comprising: an impurity-doped region formed in the semiconductor substrate, having a conductivity type opposite that of the semiconductor substrate, for collecting minority carriers; a channel cut region formed in the semiconductor substrate adjacent to and contacting said impurity doped region; a field oxide layer formed on said impurity-doped region and said channel cut region; a first polysilicon film selectively formed on said field oxide layer and the semiconductor substrate; an insulating film formed on said field oxide layer and said first polysilicon film; and a second polysilicon film formed on said insulating film.

Claim 15

A semiconductor memory device including memory cells formed in a semiconductor substrate, comprising: an impurity-doped region formed in the semiconductor substrate, having a conductivity type opposite that of the semiconductor substrate, for collecting minority carriers; a channel cut region formed in the semiconductor substrate adjacent to and contacting said impurity doped region; a field oxide layer formed on said impurity-doped region and said channel cut region; a first polysilicon film selectively formed on said field oxide layer and the semiconductor substrate; an insulating film formed on said field oxide layer and said first polysilicon film; and a second polysilicon film formed on said insulating film.

Claim 16

A semiconductor memory device according to claim 13, wherein the memory cells comprise a switching transistor and a storage capacitor and wherein said storage capacitor comprises said first polysilicon film, said insulating film and said second polysilicon film.