Semiconductor laser with blocking layer

Claim 2

In a semiconductor laser diode operable at high power and brightness levels, a structure comprising: a semiconductor substrate having at least two parallel channels formed in one of its surfaces; a first inactive cladding semiconductor layer of the same polarity type material as the substrate, overlying the substrate; a second inactive cladding semiconductor layer of the opposite polarity type material; an active semiconductor layer disposed between the first and second inactive layers; a blocking layer of opposite polarity type material to the substrate, disposed between the substrate and the first inactive layer, but only in regions outside of the substrate channels, and not in regions overlying or between the channels; and means for applying a bias voltage between the inactive layers, to produce optical gain in the device, wherein said means for applying a bias voltage includes a metallization layer extending over the substrate channels; whereby the blocking layer and the multiple channel structure together provide a current focusing mechanism that concentrates current flow through and between the channels, and thereby improves performance characteristics.

Claim 3

A semiconductor laser diode structure as set forth in claim 1, wherein: the means for applying a bias voltage includes a contact stripe formed in an overlying relationship with the second inactive layer.

Claim 4

A semiconductor laser diode structure as set forth in claim 2, wherein: the contact stripe is relatively wide in relation to the combined widths of the channels, to provide a multi-filament optical gain area.

Claim 5

A semiconductor laser diode structure as set forth in claim 2, wherein: the contact stripe is relatively narrow and extends only over the channel widths, to provide a single-filament optical gain region centered over the combined channels.

Claim 6

A semiconductor laser diode structure as set forth in claim 1, wherein: the active layer is curved convexly toward the substrate, to enhance the current focusing mechanism of the structure.

Claim 7

A semiconductor laser diode structure as set forth in claim 1, wherein: the active layer is a substantially planar layer.

Claim 8

A semiconductor laser diode structure as set forth in claim 1, wherein: the channels define an intermediate mesa region in the substrate; and the thickness of the first inactive layer between the substrate mesa and the active layer is large enough to reduce absorption losses in the intermediate region to such a degree that there is close coupling between lasing regions above the channels.

Claim 9

A semiconductor laser diode structure as set forth in claim 1, wherein: the thickness of the first inactive layer is greater in the region between channels than it is in areas outside the channels, to provide for close coupling in the region between channels, and yet to contain lasing within the channel regions.

Claim 10

In a semiconductor laser diode operable at high power and brightness levels, a structure comprising: a p type substrate having at least two parallel channels formed in one of its surfaces; a first inactive cladding semiconductor layer of p type material, overlying the substrate; a second inactive cladding semiconductor layer of n type material; an active semiconductor layer disposed between the first and second inactive layers; a blocking layer of n type material disposed between the substrate and the first inactive layer, but only in regions outside of the substrate channels, and not in regions overlying or between the channels; and means for applying a bias voltage between the inactive layers, to produce optical gain in the device, wherein said means for applying a bias voltage includes a metallization layer extending over the two substrate channels; whereby the blocking layer and the multiple channel structure together provide a current focusing mechanism that concentrates current flow through and between the channels, and thereby improves performance characteristics.

Claim 11

In a semiconductor laser diode operable at high power and brightness levels, a structure comprising: a p type substrate having at least two parallel channels formed in one of its surfaces; a first inactive cladding semiconductor layer of p type material, overlying the substrate; a second inactive cladding semiconductor layer of n type material; an active semiconductor layer disposed between the first and second inactive layers; a blocking layer of n type material disposed between the substrate and the first inactive layer, but only in regions outside of the substrate channels, and not in regions overlying or between the channels; and means for applying a bias voltage between the inactive layers, to produce optical gain in the device, wherein said means for applying a bias voltage includes a metallization layer extending over the two substrate channels; whereby the blocking layer and the multiple channel structure together provide a current focusing mechanism that concentrates current flow through and between the channels, and thereby improves performance characteristics.

Claim 12

A semiconductor laser diode structure as set forth in claim 9, wherein: the means for applying a bias voltage includes a contact stripe formed in an overlying relationship with the second inactive layer.

Claim 13

A semiconductor laser diode structure as set forth in claim 10, wherein: the contact stripe is relatively wide in relation to the combined widths of the channels, to provide a multi-filament optical gain area.

Claim 14

A semiconductor laser diode structure as set forth in claim 10, wherein: the contact stripe is relatively narrow and extends only over the channel widths, to provide a single-filament optical gain region centered over the combined channels.

Claim 15

A semiconductor laser diode structure as set forth in claim 9, wherein: the active layer is curved convexly toward the substrate, to enhance the current focusing mechanism of the structure.

Claim 16

A semiconductor laser diode structure as set forth in claim 9, wherein: the active layer is a substantially planar layer.

Claim 17

A semiconductor laser diode structure as set forth in claim 13, wherein: the means for applying a bias voltage includes a contact stripe formed in an overlying relationship with the second inactive layer.

Claim 18

A semiconductor laser diode structure as set forth in claim 15, wherein: the contact stripe is relatively wide in relation to the combined widths of the channels, to provide a multi-filament optical gain area.

Claim 19

A semiconductor laser diode structure as set forth in claim 15, wherein: the contact stripe is relatively narrow and extends only over the channel widths, to provide a single-filament optical gain region centered over the combined channels.

Claim 20

A semiconductor laser diode structure as set forth in claim 14, wherein: the means for applying a bias voltage includes a contact stripe formed in an overlying relationship with the second inactive layer.

Claim 21

A semiconductor laser diode structure as set forth in claim 18, wherein: the contact stripe is relatively wide in relation to the combined widths of the channels, to provide a multi-filament optical gain area.

Claim 22

A semiconductor laser diode structure as set forth in claim 18, wherein: the contact stripe is relatively narrow and extends only over the channel widths, to provide a single-filament optical gain region centered over the combined channels.

Claim 23

A semiconductor laser diode structure as set forth in claim 9, wherein: the number of channels is two.

Claim 24

A semiconductor laser diode structure as set forth in claim 10, wherein: the number of channels is two.

Claim 25

A semiconductor laser diode structure as set forth in claim 12, wherein: the number of channels is two.

Claim 26

A semiconductor laser diode structure as set forth in claim 13, wherein: the number of channels is two.

Claim 27

A semiconductor laser diode structure as set forth in claim 14, wherein: the number of channels is two.

Claim 28

A semiconductor laser diode structure as set forth in claim 15, wherein: the number of channels is two.

Claim 29

A semiconductor laser diode structure as set forth in claim 16, wherein: the number of channels is two.

Claim 30

A semiconductor laser diode structure as set forth in claim 17, wherein: the number of channels is two.

Claim 31

A semiconductor laser diode structure as set forth in claim 18, wherein: wherein the number of channels is two.

Claim 32

A semiconductor laser diode structure as set forth in claim 19, wherein: wherein the number of channels is two.

Claim 33

A semiconductor laser diode structure as set forth in claim 20, wherein: wherein the number of channels is two.

Claim 34

A semiconductor laser diode structure as set forth in claim 9, wherein: the channels define an intermediate mesa region in the substrate; and the thickness of the first inactive layer between the substrate mesa and the active layer is large enough to reduce absorption losses in the intermediate region to such a degree that there is close coupling between lasing regions above the channels.

Claim 35

A semiconductor laser diode structure as set forth in claim 9, wherein: the thickness of the first inactive layer is greater in the region between channels than it is in areas outside the channels, to provide for close coupling in the region between channels, and yet to contain lasing within the channel regions.

Claim 36

A semiconductor laser diode structure as set forth in claim 33, wherein: the first inactive layer is formed by liquid-phase epitaxy, and the substrate region between channels is melted back to a lower height during the liquid-phase epitaxy process, thereby producing the desired increased thickness of the first inactive layer in the intermediate region between channels.

Claim 37

A semiconductor laser diode structure as set forth in claim 8, wherein: the thickness of the first inactive layer is greater in the region between channels than it is in areas outside the channels, to provide for close coupling in the region between channels, and yet to contain lasing within the channel regions.

Claim 38

A semiconductor laser diode structure as set forth in claim 35, wherein: the first inactive layer is formed by liquid-phase epitaxy, and the substrate region between channels is melted back to a lower height during the liquid-phase epitaxy process, thereby producing the desired increased thickness of the first inactive layer in the intermediate region between channels.

Claim 39

In a semiconductor laser diode operable at high power and brightness levels, a structure comprising: a p type substrate of gallium arsenide (GaAs) having two parallel channels formed in one of its surfaces; a first inactive cladding semiconductor layer of p type gallium aluminum arsenide of approximately the composition Ga 0 .65 Al 0 .35 As, overlying the substrate; a second inactive cladding semiconductor layer of n type gallium aluminum arsenide of approximately the composition Ga 0 .65 Al 0 .35 As; an active semiconductor layer of gallium aluminum arsenide of approximately the composition Ga 0 .94 Al 0 .06 As disposed between the first and second inactive layers; a blocking layer of n type gallium arsenide disposed between the substrate and the first inactive layer, but only in regions outside of the substrate channels, and not in regions overlying or between the channels; and means for applying a bias voltage between the inactive layers, to produce optical gain in the device, wherein said means for applying a bias voltage includes a metallization layer extending over the substrate channels; whereby the blocking layer and the multiple channel structure together provide a current focusing mechanism that concentrates current flow through the two channels and toward an axis of symmetry between the two channels, and thereby improves performance characteristics.

Claim 40

In a semiconductor laser diode operable at high power and brightness levels, a structure comprising: a p type substrate of gallium arsenide (GaAs) having two parallel channels formed in one of its surfaces; a first inactive cladding semiconductor layer of p type gallium aluminum arsenide of approximately the composition Ga 0 .65 Al 0 .35 As, overlying the substrate; a second inactive cladding semiconductor layer of n type gallium aluminum arsenide of approximately the composition Ga 0 .65 Al 0 .35 As; an active semiconductor layer of gallium aluminum arsenide of approximately the composition Ga 0 .94 Al 0 .06 As disposed between the first and second inactive layers; a blocking layer of n type gallium arsenide disposed between the substrate and the first inactive layer, but only in regions outside of the substrate channels, and not in regions overlying or between the channels; and means for applying a bias voltage between the inactive layers, to produce optical gain in the device, wherein said means for applying a bias voltage includes a metallization layer extending over the substrate channels; whereby the blocking layer and the multiple channel structure together provide a current focusing mechanism that concentrates current flow through the two channels and toward an axis of symmetry between the two channels, and thereby improves performance characteristics.

Claim 41

A semiconductor laser diode structure as set forth in claim 37, wherein: the means for applying a bias voltage includes a contact stripe formed in an overlying relationship with the second inactive layer.

Claim 42

A semiconductor laser diode structure as set forth in claim 38, wherein: the contact stripe is relatively wide in relation to the combined widths of the channels, to provide a multi-filament optical gain area.

Claim 43

A semiconductor laser diode structure as set forth in claim 38, wherein: the contact stripe is relatively narrow and extends only over the channel widths, to provide a single-filament optical gain region centered over the combined channels.

Claim 44

A semiconductor laser diode structure as set forth in claim 37, wherein: the active layer is curved convexly toward the substrate, to enhance the current focusing mechanism of the structure.

Claim 45

A semiconductor laser diode structure as set forth in claim 37, wherein: the active layer is substantially planar.

Claim 46

A semiconductor laser diode structure as set forth in claim 37, wherein: the channels define an intermediate mesa region in the substrate; and the thickness of the first inactive layer between the substrate mesa and the active layer is large enough to reduce absorption losses in the intermediate region to such a degree that there is close coupling between lasing regions above the channels.

Claim 47

In a semiconductor laser operable at high power and brightness levels, a structure comprising: an active semiconductor layer; means defining at least two principal lasing regions laterally spaced in the active layer, the two principal lasing regions being configured to produce different sets of longitudinal modes of output; means for defining an intermediate coupling region between the principal lasing regions, to produce close coupling between the principal lasing regions, resulting in a composite output from the structure that includes longitudinal modes common to both principal lasing regions, whereby the structure can be easily designed to operate in a single desired longitudinal mode; and wherein the means defining the principal lasing regions and an intermediate coupling region include a semiconductor substrate having two parallel channels formed therein, a first inactive semiconductor layer of selected polarity type formed over the substrate, a second inactive semiconductor layer of opposite polarity type to the first formed over said active layer, which is itself formed over the first inactive layer, a top semiconductor layer formed over the second inactive layer, a blocking layer of opposite polarity type to the substrate, between the substrate and the first inactive layer, but only in regions outside of the substrate channels, and not in regions overlying or between the channels, and means for applying a bias voltage across the structure, to produce optical gain, including a metallization layer formed over the top semiconductor layer and extending over both parallel channels.

Claim 48

In a semiconductor laser operable at high power and brightness levels, a structure comprising: an active semiconductor layer; means defining at least two principal lasing regions laterally spaced in the active layer, the two principal lasing regions being configured to produce different sets of longitudinal modes of output; means for defining an intermediate coupling region between the principal lasing regions, to produce close coupling between the principal lasing regions, resulting in a composite output from the structure that includes longitudinal modes common to both principal lasing regions, whereby the structure can be easily designed to operate in a single desired longitudinal mode; and wherein the means defining the principal lasing regions and an intermediate coupling region include a semiconductor substrate having two parallel channels formed therein, a first inactive semiconductor layer of selected polarity type formed over the substrate, a second inactive semiconductor layer of opposite polarity type to the first formed over said active layer, which is itself formed over the first inactive layer, a top semiconductor layer formed over the second inactive layer, a blocking layer of opposite polarity type to the substrate, between the substrate and the first inactive layer, but only in regions outside of the substrate channels, and not in regions overlying or between the channels, and means for applying a bias voltage across the structure, to produce optical gain, including a metallization layer formed over the top semiconductor layer and extending over both parallel channels.

Claim 49

A semiconductor laser structure as set forth in claim 44, wherein: the means for defining at least two principal lasing regions includes means for varying the thickness of said active layer, to provide corresponding variations in the effective refractive index and the longitudinal mode spacing.

Claim 50

A semiconductor laser structure as set forth in claim 44, wherein: the means for defining at least two principal lasing regions includes means for varying the channel dimensions to provide for longitudinal mode selection.

Claim 51

A semiconductor laser as set forth in claim 44, wherein: the substrate is of p type gallium arsenide (GaAs); the first and second inactive layers are of p type and n type, respectively, gallium aluminum arsenide of approximately the composition Ga 0 .65 Al 0 .35 As; the active layer is of gallium aluminum arsenide of approximately the composition Ga 0 .94 Al 0 .06 As; the top layer is of n type gallium arsenide; and the blocking layer is of n type gallium arsenide.