Abstract A photoconductive device comprising a conductive substrate and a photoconductive layer applied on the conductive substrate, which photoconductive layer is made of amorphous silicon containing at least hydrogen, wherein the photoconductive layer contains hydroxy radicals. Another photoconductive device comprising a conductive substrate, a photoconductive layer of amorphous silicon containing at least hydrogen and a surface protection layer applied on the photoconductive layer; wherein a dopant is added in the photoconductive layer at least near the interface with the surface protection layer, and the concentration of the dopant increases in the direction perpendicular to the interface and the surface protection layer has an optical energy gap larger than that of the photoconductive layer. A further photoconductive device comprising a conductive substrate; a photoconductive layer of amorphous silicon applied on the conductive substrate and a surface protection layer of amorphous silicon applied on said photoconductive layer wherein the surface protection layer contains oxygen, and is doped with a IIIb element.
A photoconductive device comprising: a conductive substrate; and a photoconductive layer applied on the conductive substrate, which photoconductive layer is made of amorphous silicon containing at least hydrogen; wherein the photoconductive layer contains hydroxy radicals.
Claim 2
Dependent Claim
35 words
A photoconductive device comprising: a conductive substrate; and a photoconductive layer applied on the conductive substrate, which photoconductive layer is made of amorphous silicon containing at least hydrogen; wherein the photoconductive layer contains hydroxy radicals.
Claim 3
Dependent Claim
46 words
A photoconductive device according to claim 1, wherein the intensity of a broad absorption peak at 860 cm -1 in the infrared absorption spectra of said photoconductive layer is from 0.1 to 2.0 relative to the intensity of an absorption peak at 650 cm -1 .
Claim 4
Dependent Claim
45 words
A photoconductive device according to claim 1, wherein the intensity of a broad absorption peak at 860 cm -1 in the infrared absorption spectra of said photoconductive layer is from 0.1 to 2.0 relative to the intensity of a peak at 2050 cm -1 .