Abstract In a method of manufacturing a glass passivation type semiconductor device wherein a silicon semiconductor substrate of a first conductivity type is formed with a p-n junction by diffusing an impurity of a second conductivity type thereinto, recesses which reach the p-n junction are provided to expose the p-n junction in the recesses, and the exposed parts of the p-n junction are covered with a low-melting glass; a method of manufacturing a glass passivation type semiconductor device according to this invention consists in that, using a printing mask, a glass is deposited on a whole surface of a wafer except for an outer periphery of the wafer or predetermined parts thereof necessary for alingment at a subsequent step, with the glass films at the bottoms of said recesses and the p-n junction parts being rendered at least 10 μm thick and glass films at the other parts being rendered 4-10 μm thick, and that unnecessary portions of said glass films are thereafter removed by etching, using a photoresist as a mask.
In a method of manufacturing a glass passivation type semiconductor device wherein a silicon semiconductor substrate of a first conductivity type is formed with a p-n junction by diffusing an impurity of a second conductivity type thereinto, recesses which reach the p-n junction are provided to expose the p-n junction in the recesses, and the exposed parts of the p-n junction are covered with a low-melting glass; a method of manufacturing a glass passivation type semiconductor device characterized in that, using a printing mask, a glass is deposited on a whole surface of a wafer except for an outer periphery of the wafer or predetermined parts thereof necessary for alignment at a subsequent step, with the glass films at the bottoms of said recesses and the p-n junction parts being rendered at least 10 μm thick, and that unnecessary portions of said glass films are thereafter removed by etching, using a photoresist as a mask.
Claim 2
Dependent Claim
155 words
In a method of manufacturing a glass passivation type semiconductor device wherein a silicon semiconductor substrate of a first conductivity type is formed with a p-n junction by diffusing an impurity of a second conductivity type thereinto, recesses which reach the p-n junction are provided to expose the p-n junction in the recesses, and the exposed parts of the p-n junction are covered with a low-melting glass; a method of manufacturing a glass passivation type semiconductor device characterized in that, using a printing mask, a glass is deposited on a whole surface of a wafer except for an outer periphery of the wafer or predetermined parts thereof necessary for alignment at a subsequent step, with the glass films at the bottoms of said recesses and the p-n junction parts being rendered at least 10 μm thick, and that unnecessary portions of said glass films are thereafter removed by etching, using a photoresist as a mask.