US4630091A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state imaging apparatus
Assignee: Panasonic Holdings Corp
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Filing: 1984-04-19
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Granted: 1986-12-16
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Expires: 2004-04-19
Abstract
Abstract Photoelectric transducing elements are formed in a first impurity-doped region (14), and signal charge reading-out circuits (2, 3) are formed in a second impurity-doped region which is deeper than the first impurity-doped region, so that fixed pattern noise is drastically reduced, improving picture quality.
Inventors
- 👤 Takao Kuroda
- 👤 Shigenori Matsumoto
- 👤 Kenju Horii
- 👤 Takahiro Yamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:24
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F39/80; H10F39/803
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
130 words
In a solid state imaging apparatus the improvements comprising: a semiconductor substrate of one conductivity type, a first region which is provided on a principal surface of said substrate, doped with an impurity to make the other conductivity type and has a set of photoelectric transducing elements therein, characterized in that a second region, which is provided on said principal surface of said substrate being isolated from said first region and doped with said impurity to make said other conductivity type, contains signal-charge reading-out means therein, and depth from said principal surface to a junction defining a bottom of said second region is deeper than the depth from said principal surface of a junction defining a bottom of said first region at a part immediately under said photoelectric transducing elements.
Claim 2
Dependent Claim
130 words
In a solid state imaging apparatus the improvements comprising: a semiconductor substrate of one conductivity type, a first region which is provided on a principal surface of said substrate, doped with an impurity to make the other conductivity type and has a set of photoelectric transducing elements therein, characterized in that a second region, which is provided on said principal surface of said substrate being isolated from said first region and doped with said impurity to make said other conductivity type, contains signal-charge reading-out means therein, and depth from said principal surface to a junction defining a bottom of said second region is deeper than the depth from said principal surface of a junction defining a bottom of said first region at a part immediately under said photoelectric transducing elements.
Claim 3
Dependent Claim
50 words
A solid state imaging apparatus in accordance with claim 1, wherein said first region contains vertical read-out means and said junction of a part of said first region which is immediately under said vertical read-out means is deeper than the junction which is immediately under φ said photoelectric transducing elements.
Claim 4
Dependent Claim
36 words
A solid state imaging apparatus in accordance with claim 1, wherein said second region is divided into a third part containing a vertical scanning circuit and a fourth part containing a horizontal scanning or transferring circuit.
Claim 5
Dependent Claim
144 words
In a solid state imaging apparatus comprising: a semiconductor substrate of one conductivity type, a first region which is provided on a principal surface of said substrate, doped with an impurity to make the other conductivity type and has a set of photoelectric transducing elements therein, characterized in that a second region, which is provided on said principal surface of said substrate being isolated from said first region and doped with said impurity to make said other conductivity type, contains signal-charge reading-out means therein, bias-feeding means for feeding bias potential to at least one of said first and second regions, and depth from said principal surface to a junction defining a bottom of said second region is deeper than the depth from said principal surface of a junction defining a bottom of said first region at a part immediately under said photoelectric transducing elements.
Claim 6
Dependent Claim
144 words
In a solid state imaging apparatus comprising: a semiconductor substrate of one conductivity type, a first region which is provided on a principal surface of said substrate, doped with an impurity to make the other conductivity type and has a set of photoelectric transducing elements therein, characterized in that a second region, which is provided on said principal surface of said substrate being isolated from said first region and doped with said impurity to make said other conductivity type, contains signal-charge reading-out means therein, bias-feeding means for feeding bias potential to at least one of said first and second regions, and depth from said principal surface to a junction defining a bottom of said second region is deeper than the depth from said principal surface of a junction defining a bottom of said first region at a part immediately under said photoelectric transducing elements.
Claim 7
Dependent Claim
50 words
A solid state imaging apparatus in accordance with claim 4, wherein said first region contains vertical read-out means and said junction of a part of said first region which is immediately under said vertical read-out means is deeper than the junction which is immediately under φ said photoelectric transducing elements.
Claim 8
Dependent Claim
36 words
A solid state imaging apparatus in accordance with claim 4, wherein said second region is divided into a third part containing a vertical scanning circuit and a fourth part containing a horizontal scanning or transferring circuit.
Claim 9
Dependent Claim
83 words
A solid state imaging apparatus in accordance with claim 4, wherein said bias-feeding means comprises a first bias-feeding means for feeding across said first region at the part immediately under said photoelectric transducing elements and said semiconductor substrate with such an inverse bias potential as is necessary to deplete said first region, and a second bias-feeding means for feeding across said second region and said semiconductor substrate with such an inverse bias potential as is larger than that of said first bias-feeding means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-12-15 | 1990-06-16 | 1990-12-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-12-15 | 1994-06-16 | 1994-12-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-12-15 | 1998-06-16 | 1998-12-16 | $7700.00 | Window Closed / Lapsed |