US4629539A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal layer patterning method
Assignee: TDK Corp
•
Filing: 1983-07-07
•
Granted: 1986-12-16
•
Expires: 2003-07-07
Abstract
Abstract A metal layer of aluminum, an aluminum-silicon alloy, aluminum-copper alloy, copper or chromium to be patterned is formed on an insulating substrate and a mask layer of a predetermined pattern is formed on the metal layer and then the metal layer is subjected to electrolytic etching by an electrolyte through the mask layer, forming a patterned metal layer. When the metal layer is formed on aluminum, the electrolyte is an aqueous solution including a solute consisting principally of phosphoric acid; phosphoric acid and nitric acid; phosphoric acid, nitric acid and acetic acid; hydrochloric acid; potassium hydroxide; or sodium hydroxide. When the metal layer is formed on the aluminum-silicon or aluminum-copper alloy, the electrolyte is an aqueous solution including a solute consisting principally of phosphoric acid; phosphoric acid and nitric acid; or phosphoric acid, nitric acid and acetic acid. When the metal layer is formed of copper, the electrolyte is an aqueous solution including a solute consisting principally of sulfuric acid. When the metal layer is formed chromium, the electrolyte is an aqueous solution including a solute consisting principally of drochloric acid. A DC constant-current source is connected between the metal layer and an electrode corresponding thereto, and the electrolytic etching is carried out until voltage between metal layer and the electrode increases suddenly. A DC constant-voltage source is connected between the metal layer and an electrode corresponding thereto, and the electrolytic etching is carried out until current flowing across the metal layer decreases suddenly.
Inventors
- 👤 Yuji Imai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 08:39
CPC Classifications
B; B24; B24B; B24B37/00; B24B37/005; B24B37/013; C; C25; C25F; C25F3/00; C25F3/02; C25F3/14; H; H10; H10P; H10P50/00; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10P74/00; H10P74/23; H10P74/238
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
164 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-silicon alloy; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of phosphoric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te(°C.) and the density of current flowing across the metal layer to the electrolyte is set to a constant value larger than a value Je(mA/cm 2 ) given by Te=a×Je+b a=2.09 (1±0.1) b=17.5 (1±0.1) ; and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 2
Dependent Claim
164 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-silicon alloy; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of phosphoric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te(°C.) and the density of current flowing across the metal layer to the electrolyte is set to a constant value larger than a value Je(mA/cm 2 ) given by Te=a×Je+b a=2.09 (1±0.1) b=17.5 (1±0.1) ; and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 3
Dependent Claim
165 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-silicon alloy; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of phosphoric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the density of current flowing across the metal layer to the electrolyte is set to a constant value Je (mA/cm 2 ) and the temperature of the electrolyte is set to a constant value smaller than a value Te (°C.) given by Te=a×Je+b a=2.09 (1±0.1) b=17.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 4
Dependent Claim
165 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-silicon alloy; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of phosphoric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the density of current flowing across the metal layer to the electrolyte is set to a constant value Je (mA/cm 2 ) and the temperature of the electrolyte is set to a constant value smaller than a value Te (°C.) given by Te=a×Je+b a=2.09 (1±0.1) b=17.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 5
Dependent Claim
167 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-silicon alloy; wherein the eletrolyte is a basic aqueous solution including a solute consisting principally of phosphoric acid and nitric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te (°C.) and the density of current flowing across the matal layer to the electrolyte is set to a constant value larger than a value Je(mA/cm 2 ) given by Te=a×Je+b a=2.09 (1±0.1) b=17.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 6
Dependent Claim
167 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-silicon alloy; wherein the eletrolyte is a basic aqueous solution including a solute consisting principally of phosphoric acid and nitric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te (°C.) and the density of current flowing across the matal layer to the electrolyte is set to a constant value larger than a value Je(mA/cm 2 ) given by Te=a×Je+b a=2.09 (1±0.1) b=17.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 7
Dependent Claim
168 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to from a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-silicon alloy; wherein the electrolyte is a basic aqueous solution including a solution consisting principally of phosphoric acid and nitric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the density of current flowing across the metal layer to the elctrolyte is set to a constant value Je (mA/cm 2 ) and the temperature of the electrolyte is set to a constant value smaller than a value Te (°C.) given by Te=a×Je+b a=2.09 (1±0.1) b=17.5 (1±0.1); and wherein the electrolytic etching is carried out util voltage between the metal layer and the electrode increases suddenly.
Claim 8
Dependent Claim
168 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to from a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-silicon alloy; wherein the electrolyte is a basic aqueous solution including a solution consisting principally of phosphoric acid and nitric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the density of current flowing across the metal layer to the elctrolyte is set to a constant value Je (mA/cm 2 ) and the temperature of the electrolyte is set to a constant value smaller than a value Te (°C.) given by Te=a×Je+b a=2.09 (1±0.1) b=17.5 (1±0.1); and wherein the electrolytic etching is carried out util voltage between the metal layer and the electrode increases suddenly.
Claim 9
Dependent Claim
168 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and aubjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-silicon alloy; wherein the electrolyte is a basic aqueous solution including a slolute consisting principally of phosphoric acid, nitric acid and acetic acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te (°C.) and the density of current flowing across the metal layer to the electrolyte is set to constant value larger than a value Je(mA/cm 2 ) given by Te=a×Je+b a=2.09 (1±0.1) b=17.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increasses suddenly.
Claim 10
Dependent Claim
168 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and aubjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-silicon alloy; wherein the electrolyte is a basic aqueous solution including a slolute consisting principally of phosphoric acid, nitric acid and acetic acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te (°C.) and the density of current flowing across the metal layer to the electrolyte is set to constant value larger than a value Je(mA/cm 2 ) given by Te=a×Je+b a=2.09 (1±0.1) b=17.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increasses suddenly.
Claim 11
Dependent Claim
170 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-silicon alloy; wherein the electrolyte is a basic aqueous solution including a slolute consisting principally of phosphoric acid, nitric acid and acetic acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the density of current flowing across the metal layer to the electrolyte is set to a constant value Je (mA/cm 2 ) and the temperature of the electrolyte is set to a constant value smaller than a value Te (°C.) given by Te=a×Je+b a=2.09 (1±0.1) b=17.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increasses suddenly.
Claim 12
Dependent Claim
170 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-silicon alloy; wherein the electrolyte is a basic aqueous solution including a slolute consisting principally of phosphoric acid, nitric acid and acetic acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the density of current flowing across the metal layer to the electrolyte is set to a constant value Je (mA/cm 2 ) and the temperature of the electrolyte is set to a constant value smaller than a value Te (°C.) given by Te=a×Je+b a=2.09 (1±0.1) b=17.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increasses suddenly.
Claim 13
Dependent Claim
165 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-copper alloy; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of phosphoric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te (°C.) and the density of current flowing across the metal layer to the electrolyte is set to a constant value larger than a value Je (mA/cm 2 ) given by Te=a×Je+b a=2.40 (1±0.1) b=18.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 14
Dependent Claim
165 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-copper alloy; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of phosphoric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te (°C.) and the density of current flowing across the metal layer to the electrolyte is set to a constant value larger than a value Je (mA/cm 2 ) given by Te=a×Je+b a=2.40 (1±0.1) b=18.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 15
Dependent Claim
165 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-copper alloy; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of phosphoric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the density of current flowing across the metal layer to the electrolyte is set to a constant value Je (mA/cm 2 ) and the temperature of the electrolyte is set to a constant value smaller than a value Te (°C.) given by Te=a×Je+b a=2.40 (1±0.1) b=18.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electtrode increases suddenly.
Claim 16
Dependent Claim
165 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-copper alloy; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of phosphoric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the density of current flowing across the metal layer to the electrolyte is set to a constant value Je (mA/cm 2 ) and the temperature of the electrolyte is set to a constant value smaller than a value Te (°C.) given by Te=a×Je+b a=2.40 (1±0.1) b=18.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electtrode increases suddenly.
Claim 17
Dependent Claim
167 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-copper alloy; wherein the electrolyte is a basic aqueous solution including absolute consisting principally of phosphoric acid and nitric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te (°C.) and the density of current flowing across the metal layer to the electrolyte is set to a constant value larger than a value Je (mA/cm 2 ) given by Te=a×je+b a=2.40 (1±0.1) b=18.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 18
Dependent Claim
167 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-copper alloy; wherein the electrolyte is a basic aqueous solution including absolute consisting principally of phosphoric acid and nitric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te (°C.) and the density of current flowing across the metal layer to the electrolyte is set to a constant value larger than a value Je (mA/cm 2 ) given by Te=a×je+b a=2.40 (1±0.1) b=18.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 19
Dependent Claim
168 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-copper alloy; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of phosphoric acid and netric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the density of current flowing across the metal layer to the electrolyte is set to a constant value Je (mA/cm 2 ) and the temperature of the electrolyte is set to a constant value samller than a value Te (°C.) given by Te=a×Je+b a=2.40 (1±0.1) b=18.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 20
Dependent Claim
168 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-copper alloy; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of phosphoric acid and netric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the density of current flowing across the metal layer to the electrolyte is set to a constant value Je (mA/cm 2 ) and the temperature of the electrolyte is set to a constant value samller than a value Te (°C.) given by Te=a×Je+b a=2.40 (1±0.1) b=18.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 21
Dependent Claim
169 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-copper alloy; wherein the electrolyte is a basic aqueous solution including a solute consisting principaly of phosphoric acid, nitric acid and acetic acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te (°C.) and the density of current flowing across the metal layer to the electrolyte is set to a constant value larger than a value Je(mA/cm 2 ) given by Te=a×Je+b a=2.40 (1±0.1) b=18.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 22
Dependent Claim
169 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-copper alloy; wherein the electrolyte is a basic aqueous solution including a solute consisting principaly of phosphoric acid, nitric acid and acetic acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te (°C.) and the density of current flowing across the metal layer to the electrolyte is set to a constant value larger than a value Je(mA/cm 2 ) given by Te=a×Je+b a=2.40 (1±0.1) b=18.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 23
Dependent Claim
169 words
A metal layer paterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-copper alloy; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of phosphoric adid, nitric acid and acetic acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the density of current flowing across the metal layer to the electrolyte is set to a constant value Je (mA/cm 2 ) and the temperature of the electrolyte is set to a constant value smaller than a value Te(°C.) given by Te=a×je+b a=2.40 (1±0.1) b=18.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 24
Dependent Claim
169 words
A metal layer paterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of an aluminum-copper alloy; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of phosphoric adid, nitric acid and acetic acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the density of current flowing across the metal layer to the electrolyte is set to a constant value Je (mA/cm 2 ) and the temperature of the electrolyte is set to a constant value smaller than a value Te(°C.) given by Te=a×je+b a=2.40 (1±0.1) b=18.5 (1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 25
Dependent Claim
251 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of copper; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of sulfuric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te (°C.) and the density of current flowing across the metal layer to a electrolyte is set to a constant value larger than a value Je (mA/cm 2 ) determined by the constant value Te (°C.) of the electrolyte temperature; wherein, letting J 1 (mA/cm 2 ) and J 2 (mA/cm 2 ) represent values of the densities of current flowing across the metal layer to the electrolyte in the case of the amount of side etching of the patterned metal layer being substantially zero when the electrolytic etching is carried out with the electrolyte terperature held at T 1 (°C.) and T 2 (°C.), the value Je of the current density is given by Te=a×Je+b a=[(T.sub.2 -T.sub.1)/J.sub.2 -J.sub.1)]×(1±0.1) b=[(T.sub.1 J.sub.2 -T.sub.2 J.sub.1)/(J.sub.2 -J.sub.1)]×(1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 26
Dependent Claim
251 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of copper; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of sulfuric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te (°C.) and the density of current flowing across the metal layer to a electrolyte is set to a constant value larger than a value Je (mA/cm 2 ) determined by the constant value Te (°C.) of the electrolyte temperature; wherein, letting J 1 (mA/cm 2 ) and J 2 (mA/cm 2 ) represent values of the densities of current flowing across the metal layer to the electrolyte in the case of the amount of side etching of the patterned metal layer being substantially zero when the electrolytic etching is carried out with the electrolyte terperature held at T 1 (°C.) and T 2 (°C.), the value Je of the current density is given by Te=a×Je+b a=[(T.sub.2 -T.sub.1)/J.sub.2 -J.sub.1)]×(1±0.1) b=[(T.sub.1 J.sub.2 -T.sub.2 J.sub.1)/(J.sub.2 -J.sub.1)]×(1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 27
Dependent Claim
251 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of copper; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of sulfuric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te (°C.) and the density of current flowing across the metal layer to the electrolyte is set to a constant value larger than a value Je (mA/cm 2 ) determined by the constant value Te (°C.) of the electrolyte temperature; wherein, letting J 1 (mA/cm 2 ) and J 2 (mA/cm 2 ) represent values of the densities of current flowing across the metal layer to the electrolyte in the case of the amount of side etching of the patterned metal layer being substantially zero when the electrolytic etching is carried out with the electrolyte temperature held at T 1 (°C.) and T 2 (°C.), the value Je of the current density is given by Te=a×Je+b a=[(T.sub.2 -T.sub.1)/(J.sub.2 -J.sub.1)]×(1±0.1) b=[(T.sub.1 J.sub.2 -T.sub.2 J.sub.1)/(J.sub.2 -J.sub.1)×(1±0.1); and wherein the electrolytic ethching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 28
Dependent Claim
251 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of copper; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of sulfuric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te (°C.) and the density of current flowing across the metal layer to the electrolyte is set to a constant value larger than a value Je (mA/cm 2 ) determined by the constant value Te (°C.) of the electrolyte temperature; wherein, letting J 1 (mA/cm 2 ) and J 2 (mA/cm 2 ) represent values of the densities of current flowing across the metal layer to the electrolyte in the case of the amount of side etching of the patterned metal layer being substantially zero when the electrolytic etching is carried out with the electrolyte temperature held at T 1 (°C.) and T 2 (°C.), the value Je of the current density is given by Te=a×Je+b a=[(T.sub.2 -T.sub.1)/(J.sub.2 -J.sub.1)]×(1±0.1) b=[(T.sub.1 J.sub.2 -T.sub.2 J.sub.1)/(J.sub.2 -J.sub.1)×(1±0.1); and wherein the electrolytic ethching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 29
Dependent Claim
21 words
A metal layer patterning method according to claim 14, wherein the a and b are given by a=3.94 (1±0.1) b=17.3 (1±0.1)
Claim 30
Dependent Claim
251 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of chromium; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of hydrochloric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te (°C.) and the density of current flowing across the metal layer to the electrolyte is set to a constant value larger than a value Je (mA/cm 2 ) determined by the constant value Te (°C.) of the electrolyte temperature; wherein, letting J 1 (mA/cm 2 ) and J 2 (mA/cm 2 ) represent values of the densities of current flowing across the metal layer to the electrolyte in the case of the amount of side etching of the patterned metal layer being substantially zero when the electrolytic etching is carried out with the electrolyte temperture held at T 1 (°C.) and T 2 (°C.), the value Je of the current density is given by Te=a×Je+b a=[(T.sub.2 -T.sub.1)/(J.sub.2 -J.sub.1)]×(1±0.1) b=[(T.sub.1 J.sub.2 -T.sub.2 J.sub.1)/(J.sub.2 -J.sub.1)]×(1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddently.
Claim 31
Dependent Claim
251 words
A metal layer patterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of chromium; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of hydrochloric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te (°C.) and the density of current flowing across the metal layer to the electrolyte is set to a constant value larger than a value Je (mA/cm 2 ) determined by the constant value Te (°C.) of the electrolyte temperature; wherein, letting J 1 (mA/cm 2 ) and J 2 (mA/cm 2 ) represent values of the densities of current flowing across the metal layer to the electrolyte in the case of the amount of side etching of the patterned metal layer being substantially zero when the electrolytic etching is carried out with the electrolyte temperture held at T 1 (°C.) and T 2 (°C.), the value Je of the current density is given by Te=a×Je+b a=[(T.sub.2 -T.sub.1)/(J.sub.2 -J.sub.1)]×(1±0.1) b=[(T.sub.1 J.sub.2 -T.sub.2 J.sub.1)/(J.sub.2 -J.sub.1)]×(1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddently.
Claim 32
Dependent Claim
251 words
A metal layer aptterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of chromium; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of hydrocholoric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te (°C.) and the density of current flowing across the metal layer to the electrolyte is set to a constant value larger than a value Je (mA/cm 2 ) determined by the constant value Te (°C.) of the electrolyte temperature; wherein, letting J 1 (mA/cm 2 ) and J 2 (mA/cm 2 ) represent values of the densities of current flowing across the metal layer to the electrolyte in the case of the amount of side etching of the patterned metal layer being substantially zero when the electrolytic etching is carried out with the electrolyte temperature held at T 1 (°C.) and T 2 (°C.), the value Je of the current density is given by Te=a×Je+b a=[(T.sub.2 -T.sub.1)/(J.sub.2 -J.sub.1)]×(1±0.1) b=[(T.sub.1 J.sub.2 -T.sub.2 J.sub.1)/(J.sub.2 -J.sub.1)]×(1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 33
Dependent Claim
251 words
A metal layer aptterning method comprising the steps of: forming a metal layer to be patterned on an insulating substrate; forming a mask layer of a desired pattern on the metal layer; and subjecting the metal layer to electrolytic etching by an electrolyte through the mask layer to form a patterned metal layer; wherein the metal layer to be patterned is formed of chromium; wherein the electrolyte is a basic aqueous solution including a solute consisting principally of hydrocholoric acid; wherein a DC constant-current source is connected between the metal layer and an electrode corresponding thereto; wherein the temperature of the electrolyte is set to a constant value Te (°C.) and the density of current flowing across the metal layer to the electrolyte is set to a constant value larger than a value Je (mA/cm 2 ) determined by the constant value Te (°C.) of the electrolyte temperature; wherein, letting J 1 (mA/cm 2 ) and J 2 (mA/cm 2 ) represent values of the densities of current flowing across the metal layer to the electrolyte in the case of the amount of side etching of the patterned metal layer being substantially zero when the electrolytic etching is carried out with the electrolyte temperature held at T 1 (°C.) and T 2 (°C.), the value Je of the current density is given by Te=a×Je+b a=[(T.sub.2 -T.sub.1)/(J.sub.2 -J.sub.1)]×(1±0.1) b=[(T.sub.1 J.sub.2 -T.sub.2 J.sub.1)/(J.sub.2 -J.sub.1)]×(1±0.1); and wherein the electrolytic etching is carried out until voltage between the metal layer and the electrode increases suddenly.
Claim 34
Dependent Claim
23 words
A metal layer patterning method according to claim 16 or 17, wherein the a and b are given by a=3.00 (1±0.1) b=15.00 (1±0.1).
References Cited (Backward Citations)
US3108931A
Cited
US3267013A
Cited
US3260660A
Cited
US3560357A
Cited
US3576722A
Cited
US3785945A
Cited
US4247377A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-12-15 | 1990-06-16 | 1990-12-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-12-15 | 1994-06-16 | 1994-12-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-12-15 | 1998-06-16 | 1998-12-16 | $7700.00 | Window Closed / Lapsed |