US4626447A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma confining apparatus
Assignee: United Solar Systems Corp
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Filing: 1985-03-18
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Granted: 1986-12-02
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Expires: 2005-03-18
Abstract
Abstract Apparatus for and a method of confining the ionized plasma developed during the glow discharge deposition of thin film semiconductor alloy material to preselected portions of the plasma region so as to prevent etching and deposit only uniform, nonhomogeneous semiconductor alloy material.
Inventors
- 👤 Joachim Doehler
- 👤 Masatsugu Izu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 23:29
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/517; C23C16/54; H01J37/32697; H01J37/32733; H01J37/32752; H01J37/32761; H01J37/3277
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
137 words
In plasma glow discharge deposition apparatus wherein layers of semiconductor alloy material are deposited onto a substrate, the deposition apparatus comprising at least one dedicated deposition chamber which includes: means for supporting a substrate; cathode means spaced from the substrate; means for introducing process gases in a plasma region formed between the substrate and the cathode means; and a power source for energizing the cathode means to develop an activated plasma from the process gases introduced into the plasma region for facilitating the reaction thereof, the improvement comprising, in combination: electrically biased means adapted to repel plasma electrons so as to substantially confine the plasma to at least one preselected portion of the plasma region, whereby only semiconductor alloy material deposited from said at least one preselected portion of the plasma region is deposited onto the substrate.
Claim 2
Dependent Claim
137 words
In plasma glow discharge deposition apparatus wherein layers of semiconductor alloy material are deposited onto a substrate, the deposition apparatus comprising at least one dedicated deposition chamber which includes: means for supporting a substrate; cathode means spaced from the substrate; means for introducing process gases in a plasma region formed between the substrate and the cathode means; and a power source for energizing the cathode means to develop an activated plasma from the process gases introduced into the plasma region for facilitating the reaction thereof, the improvement comprising, in combination: electrically biased means adapted to repel plasma electrons so as to substantially confine the plasma to at least one preselected portion of the plasma region, whereby only semiconductor alloy material deposited from said at least one preselected portion of the plasma region is deposited onto the substrate.
Claim 3
Dependent Claim
17 words
Apparatus as in claim 1, wherein the electrically biased means comprise a pair of spaced biasing members.
Claim 4
Dependent Claim
36 words
Apparatus as in claim 2, wherein each of the biasing members are operatively disposed adjacent the opposed distal ends of the plasma region, whereby the plasma is confined to the central portion of the plasma region.
Claim 5
Dependent Claim
33 words
Apparatus as in claim 3, wherein each of the biasing members is an elongated member connected to a negative d.c. bias, said biasing member adapted to quench the plasma in the vicinity thereof.
Claim 6
Dependent Claim
22 words
Apparatus as in claim 4, wherein the biasing members are a pair of plates disposed adjacent to but spaced from the substrate.
Claim 7
Dependent Claim
32 words
Apparatus as in claim 5, wherein the biased plates have a surface thereof covered with an insulator to insulate the electrical bias on the plates from the remainder of the deposition assembly.
Claim 8
Dependent Claim
75 words
Apparatus as in claim 3, wherein the vapor deposition apparatus is adapted for the continuous deposition of semiconductor alloy material upon an elongated web of substrate material; means are provided for continuously advancing the web of substrate material through the deposition chamber; and one of said biasing members is disposed adjacent the leading edge of the cathode means and the other of said biasing members is disposed adjacent the trailing edge of the cathode means.
Claim 9
Independent Claim
122 words
A method of confining a highly energetic plasma within the plasma region formed in the space between a substrate and a cathode means in a glow discharge deposition chamber; the method including the steps of: providing a source of process gases including at least one precursor semiconductor gas; introducing the process gases into the plasma region; energizing the cathode means to form an activated plasma from the process gases flowing through the plasma region for facilitating the reaction thereof; and, providing electrically biased means adapted to repel plasma electrons so as to confine the activated plasma to a preselected portion of the plasma region, whereby only semiconductor alloy material from said preselected portion of the plasma region is deposited onto the substrate.
Claim 10
Independent Claim
122 words
A method of confining a highly energetic plasma within the plasma region formed in the space between a substrate and a cathode means in a glow discharge deposition chamber; the method including the steps of: providing a source of process gases including at least one precursor semiconductor gas; introducing the process gases into the plasma region; energizing the cathode means to form an activated plasma from the process gases flowing through the plasma region for facilitating the reaction thereof; and, providing electrically biased means adapted to repel plasma electrons so as to confine the activated plasma to a preselected portion of the plasma region, whereby only semiconductor alloy material from said preselected portion of the plasma region is deposited onto the substrate.
Claim 11
Dependent Claim
31 words
A method as in claim 8, including the further steps of: providing a pair of spacedly disposed, elongated members; and providing a negative d.c. bias to each of the elongated numbers.
Claim 12
Dependent Claim
33 words
A method as in claim 9, including the further step of disposing the elongated members at opposed distal ends of the plasma region for confining the ionized plasma to the central portion thereof.
Claim 13
Dependent Claim
49 words
A method as in claim 10, including the further steps of: continuously moving the substrate through the deposition chamber; disposing one of said elongated members at the leading edge of the cathode means; and disposing the other of said elongated members at the trailing edge of the cathode means.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-12-01 | 1990-06-02 | 1990-12-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-12-01 | 1994-06-02 | 1994-12-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-12-01 | 1998-06-02 | 1998-12-02 | $7700.00 | Window Closed / Lapsed |