US4623255A
Expired / Lapsed
US
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Method of examining microcircuit patterns
Assignee: National Aeronautics and Space Administration
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Filing: 1983-10-13
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Granted: 1986-11-18
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Expires: 2003-10-13
Abstract
Abstract Examination of microstructures of LSI and VLSI devices is facilitated by employing a method in which the device is photographed through a darkfield illumination optical microscope and the resulting negative subjected to inverse processing to form a positive on a photographic film. The film is then developed to form photographic prints or transparencies which clearly illustrate the structure of the device. The entire structure of a device may be examined by alternately photographing the device and selectively etching layers of the device in order to expose underlying layers.
Inventors
- 👤 Stefan F. Suszko
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:24
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/28; G01R31/302; G01R31/308
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
71 words
A method for examining the architecture of multiple layer semiconductor devices formed by successive exposure of mask patterns in an overlapping fashion, comprising the steps of: photographing a selected portion of a semiconductor device with a darkfield illumination microscope to form a negative on a first photographic film; inverse processing said negative to form a positive image on a second photographic film; and developing a photograph from said second photographic film.
Claim 2
Independent Claim
71 words
A method for examining the architecture of multiple layer semiconductor devices formed by successive exposure of mask patterns in an overlapping fashion, comprising the steps of: photographing a selected portion of a semiconductor device with a darkfield illumination microscope to form a negative on a first photographic film; inverse processing said negative to form a positive image on a second photographic film; and developing a photograph from said second photographic film.
Claim 3
Dependent Claim
18 words
A method according to claim 1 including the step of forming a photographic print from said second film.
Claim 4
Dependent Claim
18 words
A method according to claim 1 including the step of forming a photographic transparency from said second film.
Claim 5
Dependent Claim
58 words
A method according to claim 1 including the steps of selectively removing layers of the semiconductor device formed by exposure of successive mask patterns in order to reveal elements formed in the semiconductor device during successively earlier exposure steps, photographing the semiconductor device after the removal of each layer, and inverse processing the negative to form positive images.
Claim 6
Independent Claim
129 words
A method of examining a semiconductor device comprising the steps of: providing a semiconductor device having an upper layer formed by exposure of a first mask pattern; photographing said upper layer through a darkfield illumination microscope to form a negative image thereof on a first photographic film; inverse processing the negative to form an inverted positive image on a second photographic film; removing the upper layer to expose a second layer of the semiconductor device formed by photoexposure of a second mask pattern; photographing the second layer through a darkfield illumination microscope to form a negative image thereof on a third photographic film; inverse processing the third film to form an inverted positive image on a fourth photographic film; and developing the second and fourth films to form photographs.
Claim 7
Independent Claim
129 words
A method of examining a semiconductor device comprising the steps of: providing a semiconductor device having an upper layer formed by exposure of a first mask pattern; photographing said upper layer through a darkfield illumination microscope to form a negative image thereof on a first photographic film; inverse processing the negative to form an inverted positive image on a second photographic film; removing the upper layer to expose a second layer of the semiconductor device formed by photoexposure of a second mask pattern; photographing the second layer through a darkfield illumination microscope to form a negative image thereof on a third photographic film; inverse processing the third film to form an inverted positive image on a fourth photographic film; and developing the second and fourth films to form photographs.
Claim 8
Dependent Claim
44 words
A method according to claim 5 including the steps of removing at least one additional layer of the semiconductor device formed by photoexposure of additional mask patterns photographing the exposed layers and inverse processing and developing films to obtain photographs of the additional layers.
Claim 9
Independent Claim
213 words
A method of examining the microstructure of semiconductor devices such as LSIC and VLSIC devices having a plurality of layers of material formed by means of successive exposure of mask patterns in an overlapping fashion, comprising the steps of: photographing an upper surface of a semiconductor device through a darkfield microscope to form a negative, said upper surface having a first layer of material formed by means of exposure of a first mask pattern; selectively etching the semiconductor device to remove the first layer; photographing the upper surface of the semiconductor device through a darkfield microscope to again form a negative, said upper surface having a second layer of material formed by means of exposure of a second mask pattern; selectively etching the upper surface of the semiconductor device to sequentially remove additional layers of material; photographing the upper surface of the semiconductor device through a darkfield microscope after the removal of each layer of material to form additional negatives, the upper surface in each photographing step having a layer of material formed by means of exposure of additional mask patterns; inverse processing the negatives to form positives on photographic film, said positives containing images which substantially correspond to the mask patterns; and developing the film containing the positive images to form photographs.
Claim 10
Independent Claim
213 words
A method of examining the microstructure of semiconductor devices such as LSIC and VLSIC devices having a plurality of layers of material formed by means of successive exposure of mask patterns in an overlapping fashion, comprising the steps of: photographing an upper surface of a semiconductor device through a darkfield microscope to form a negative, said upper surface having a first layer of material formed by means of exposure of a first mask pattern; selectively etching the semiconductor device to remove the first layer; photographing the upper surface of the semiconductor device through a darkfield microscope to again form a negative, said upper surface having a second layer of material formed by means of exposure of a second mask pattern; selectively etching the upper surface of the semiconductor device to sequentially remove additional layers of material; photographing the upper surface of the semiconductor device through a darkfield microscope after the removal of each layer of material to form additional negatives, the upper surface in each photographing step having a layer of material formed by means of exposure of additional mask patterns; inverse processing the negatives to form positives on photographic film, said positives containing images which substantially correspond to the mask patterns; and developing the film containing the positive images to form photographs.
Claim 11
Dependent Claim
16 words
A method according to claim 7 including the step of forming photographic prints from said positives.
References Cited (Backward Citations)
No citation records indexed.
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| 3.5 Years (Year 4) | 1989-11-17 | 1990-05-19 | 1990-11-18 | $2000.00 | Window Closed / Lapsed |
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