US4622673A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Heteroepitaxial ridge overgrown laser
Assignee: Nokia Bell Labs
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Filing: 1984-05-24
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Granted: 1986-11-11
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Expires: 2004-05-24
Abstract
Abstract A ridge waveguide laser with the ridge being grown through a stripe opened in an oxide layer covering one of the cladding layers is described. In one embodiment, the cladding layer is corrugated and the ridge waveguide laser is a distributed feedback laser.
Inventors
- 👤 Won-Tien Tsang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:56
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/10; H01S5/12; H01S5/223; H01S5/30; H01S5/32; H01S5/327
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
49 words
A semiconductor laser, in sequence a first semiconductor cladding layer; a semiconductor active layer; a second semiconductor cladding layer; a dielectric layer said dielectric layer having a stripe opening exposing said second cladding layer; a semiconductor ridge in said opening; and contacts to said ridge and first cladding layer.
Claim 2
Dependent Claim
49 words
A semiconductor laser, in sequence a first semiconductor cladding layer; a semiconductor active layer; a second semiconductor cladding layer; a dielectric layer said dielectric layer having a stripe opening exposing said second cladding layer; a semiconductor ridge in said opening; and contacts to said ridge and first cladding layer.
Claim 3
Dependent Claim
20 words
A laser as recited in claim 1 in which said ridge contacts said second cladding layer in said stripe opening.
Claim 4
Dependent Claim
28 words
A laser as recited in claim 2 in which said layers and ridge comprise semiconductors selected from the group consisting of Group II-VI and Group III-V compound semiconductors.
Claim 5
Dependent Claim
20 words
A laser as recited in claim 3 in which said dielectric has a refractive index less than of said semiconductors.
Claim 6
Dependent Claim
28 words
A laser as recited in claim 4 in which said dielectric layer comprises material selected from the group consisting of SiO 2 and Si 3 N 4 .
Claim 7
Dependent Claim
17 words
A laser as recited in claim 5 in which said ridge extends laterally over said dielectric layer.
Claim 8
Dependent Claim
31 words
A laser as recited in claim 1 in which said second layer further comprises a distributed feedback grating comprising a plurality of grooves perpendicular to the longitudinal dimension of said ridge.
Claim 9
Dependent Claim
20 words
A laser as recited in claim 6 in which said ridge contacts said second cladding layer in said stripe opening.
Claim 10
Dependent Claim
28 words
A laser as recited in claim 8 in which said layers and ridge comprise semiconductors selected from the group consisting of Group II-VI and Group III-V compound semiconductors.
Claim 11
Dependent Claim
21 words
A laser as recited in claim 9 in which said dielectric layer has a refractive index less than of said semiconductor.
Claim 12
Dependent Claim
28 words
A laser as recited in claim 9 in which said dielectric layer comprises material selected from the group consisting of SiO 2 and Si 3 N 4 .
Claim 13
Dependent Claim
17 words
A laser as recited in claim 10 in which said ridge extends laterally over said dielectric layer.
References Cited (Backward Citations)
JPS54107286A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-11-10 | 1990-05-12 | 1990-11-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-11-10 | 1994-05-12 | 1994-11-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-11-10 | 1998-05-12 | 1998-11-11 | $7700.00 | Window Closed / Lapsed |