US4622432A
Expired / Lapsed
US
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Photoelectric conversion device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1984-04-30
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Granted: 1986-11-11
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Expires: 2004-04-30
Abstract
Abstract A photoelectric conversion device in which a plurality n (n being an integer large than one) of semiconductor elements U 1 to U n are sequentially formed on a substrate in a side-by-side relation and connected in series one after another. The substrate is formed by an insulating sheet-like member having an insulating film formed on a flexible metallic sheet-like member. The element U i (i=1, 2, . . . n) has a first electrode E i , a non-single-crystal semiconductor laminate member Q i formed on the first electrode E i and having formed therein at least one PN or PIN junction, and a second electrode F i formed on the semiconductor laminate member Q i . The element U i is formed by the following process (a) a first conductive layer which will ultimately serve as the first electrode E i is formed on the substrate and then subjected to a first laser beam scanning, (b) a non-single-crystal semiconductor laminate member which will ultimately serve as the semiconductor laminate member Q i is formed to cover the first electrode E i and then subjected to a second laser beam scanning, (c) a second conductive layer which will ultimately serve as a second electrode F i is formed on the semiconductor laminate member Q i and then subjected to a third laser beam scanning.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 05:11
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/107; H10F19/00; H10F19/30; H10F19/31; H10F19/33; H10F39/12; H10F39/18; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1698; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S438/00; Y10S438/94
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
270 words
A photoelectric conversion device comprising: a substrate formed by a flexible insulating sheet-like member having a metallic sheet-like member and an insulating film formed on the metallic sheet-like member, said insulating film comprising an organic resin having a thermal conductivity less than that of glass; and a plurality n (n being an integer larger than one) of semiconductor elements U 1 to U n sequentially formed on the substrate side by side and connected in series one after another in a predetermined direction; wherein the semiconductor element U i (i=1, 2, 3, . . . n) has a first electord E i formed on the substrate, a non-single-crystal semiconductor laminate member Q i formed on the first electrode E i and having formed therein at least one semiconductor junction, and a second electrode F i formed on the non-single-crystal-semiconductor laminate member Q i in opposing relation to the first electrode E i ; wherein the first electrode E i is a reflective electrode having (a) a reflective conductive layer formed of Al, Ag, an Al alloy, or a Ag alloy and making contact with the insulating film and (b) a light transparent conductive layer formed on the reflective conductive layer and making contact with the non-single-crystal semiconductor laminate member Q i ; wherein the second electrode F i is transparent; and wherein the second electrode F j+1 (j=1, 2, . . . (n-1)) of the semiconductor element U j+1 is coupled with the first electrode E j of the semoconductor element U j through a coupling portion K j formed by an extension of the second electrode F j+1 .
Claim 2
Dependent Claim
270 words
A photoelectric conversion device comprising: a substrate formed by a flexible insulating sheet-like member having a metallic sheet-like member and an insulating film formed on the metallic sheet-like member, said insulating film comprising an organic resin having a thermal conductivity less than that of glass; and a plurality n (n being an integer larger than one) of semiconductor elements U 1 to U n sequentially formed on the substrate side by side and connected in series one after another in a predetermined direction; wherein the semiconductor element U i (i=1, 2, 3, . . . n) has a first electord E i formed on the substrate, a non-single-crystal semiconductor laminate member Q i formed on the first electrode E i and having formed therein at least one semiconductor junction, and a second electrode F i formed on the non-single-crystal-semiconductor laminate member Q i in opposing relation to the first electrode E i ; wherein the first electrode E i is a reflective electrode having (a) a reflective conductive layer formed of Al, Ag, an Al alloy, or a Ag alloy and making contact with the insulating film and (b) a light transparent conductive layer formed on the reflective conductive layer and making contact with the non-single-crystal semiconductor laminate member Q i ; wherein the second electrode F i is transparent; and wherein the second electrode F j+1 (j=1, 2, . . . (n-1)) of the semiconductor element U j+1 is coupled with the first electrode E j of the semoconductor element U j through a coupling portion K j formed by an extension of the second electrode F j+1 .
Claim 3
Dependent Claim
15 words
A photoelectric conversion device according to claim 1, wherein the insulating sheet-like member is flexible.
Claim 4
Dependent Claim
32 words
A photoelectric conversion device according to claim 1, wherein the surface of the light transparent conductive layer making contact with the non-single-crystal semiconductor laminate member Q i is a diffuse reflection surface.
Claim 5
Dependent Claim
57 words
A photoelectric conversion device according to claim 3, wherein the non-single-crystal semiconductor laminate member Q i has a P-type non-single-crystal semiconductor layer making contact with the first electrode E i , and wherein the light transparent conductive layer forming the first electrode E i is formed of a tin oxide or a metallic oxide consisting principally thereof.
Claim 6
Dependent Claim
57 words
A photoelectric conversion device according to claim 3, wherein the non-single-crystal semiconductor laminate member Q i has an N-type non-single-crystal semiconductor layer making contact with the first electrode E i , and wherein the light transparent conductive layer forming the first electrode E i is formed of an indium oxide or a metallic oxide consisting principally thereof.
Claim 7
Dependent Claim
100 words
A photoelectric conversion device according to claim 1, wherein the first electrode E j and the first electrode E j+1 are separated by a first groove G j , wherein the second electrode F j+1 extends on the non-single-crystal semiconductor laminate member Q j in opposing relation to the first electrode E j , wherein a second groove O j is cut in the non-single-crystal semiconductor laminate member Q i to extend between the second electrode F j+1 and the first electrode E j , and wherein the coupling portion K j extends into the second groove O j .
Claim 8
Dependent Claim
22 words
A photoelectric conversion device according to claim 6, wherein the second groove O j extends into the first electrode E j .
Claim 9
Dependent Claim
45 words
A photoelectric conversion device according to claim 6, wherein the second electrodes F j and F j+1 are isolated by an isolating portion H j provided on the side of the non-single-crystal semiconductor laminate member Q j with respect to the groove O j .
Claim 10
Dependent Claim
17 words
A photoelectric conversion device according to claim 8, wherein the isolating portion H j is a groove.
Claim 11
Dependent Claim
30 words
A photoelectric conversion device according to claim 8, wherein the isolating portion H j extends through the non-single-crystal semiconductor laminate member Q j to reach the electrode E j .
Claim 12
Dependent Claim
31 words
A device as in claim 6, wherein said second groove O j extends across the entire width of said member Q j in a direction substantially perpendicular to said predetermined direction.
Claim 13
Dependent Claim
32 words
A device as in claim 6, wherein said second groove O j extends along at least a portion of said member Q j in a direction substantially perpendicular to said predetermined direction.
Claim 14
Dependent Claim
86 words
A photoelectric conversion device according to claim 1, wherein the non-single-crystal semiconductor laminate member Q 1 covers the electrode E 1 and its side surface on the opposite side from the non-single-crystal semiconductor laminate member Q 2 and extends to the surface of the substrate, and wherein the second electrode F 1 covers the non-single-crystal semiconductor laminate member Q 1 and its portion on the side surface of the electrode E 1 and extends as a first external connection terminal to the surface of the substrate.
Claim 15
Dependent Claim
213 words
A photoelectric conversion device according to claim 1, wherein a non-single-crystal semiconductor laminate member Q 0 of the same structure as the non-single-crystal semiconductor laminate member Q 1 to Q n is formed on that portion of the first electrode E n on the opposite side from the first electorde E n-1 , wherein a groove Q n is formed between the non-single-crystal semiconductor lamiante members Q n and Q 0 , wherein an electrode F 0 of the same structure as the second electrodes F 1 to F n is formed on the non-single-crystal semiconductor laminate member Q 0 , wherein the electrode F 0 is connected to the first electrode E n through a coupling portion K n formed by an extension of the electrode F 0 itself, wherein the non-single-crystal semiconductor laminate member Q 0 on the first electrode E n extends on the side surface of the first electrode E n the opposite side from the non-single-crystal semiconductor laminate member Q n to the surface of the substrate, and wherein the electrode F 0 on the non-single-crystal semiconductor laminate member Q 0 extends on its extending portion on the side surface of the first electrod E n to the surface of the substrate and forms an external connection terminal.
Claim 16
Dependent Claim
114 words
A photoelectric conversion device according to claim 1, wherein an electrode E 0 of the same structure as the first electrodes E 1 to E n is formed on the surface of the substrate on the side opposite from the electrode E 2 with respect to the first electrode E 1 , the electrode E 0 being separated by a groove G 0 from the first electrode E 1 , wherein the non-single-crystal semiconductor laminate member Q 1 extends on the first electrode E 0 , and wherein that portion of the second electrode F 1 extending on the extension of the non-single-crystal semiconductor laminate member Q 1 and forms an external connection terminal.
Claim 17
Dependent Claim
133 words
A photoelectric conversion device according to claim 1, wherein a non-single-crystal semiconductor laminate member Q 0 of the same structure as the non-single-crystal semiconductor members Q 1 to Q n is formed on the first electrode E n on the side opposite from the first electrode E n-1 , wherein a groove O n is formed between the non-single-crystal semiconductor lamiante members Q n and Q 0 , wherein an electrode F 0 or the same structure as the second electrodes F 1 to F n is formed as the second external connection terminal on the non-single-crystal semiconductor laminate member Q 0 , and wherein the electrode F 0 is connected to the first electrode F n through a coupling portion K n formed by an extension of the electrode F 0 itself.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-11-10 | 1990-05-12 | 1990-11-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-11-10 | 1994-05-12 | 1994-11-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-11-10 | 1998-05-12 | 1998-11-11 | $7700.00 | Window Closed / Lapsed |