US4621346A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low power CMOS fuse circuit
Assignee: Texas Instruments Inc
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Filing: 1984-09-20
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Granted: 1986-11-04
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Expires: 2004-09-20
Abstract
Abstract A fuse circuit as used in self-repairing memory devices or the like employs a CMOS inverter and a feedback transistor to provide zero static or standby current. The fuse is in series with the feedback transistor across the supply, and the CMOS inverter has as its input the node between the fuse and feedback transistor. The inverter output controls the gate of the feedback transistor, which is N-channel or P-channel, depending upon whether the circuit is connected for high or low voltage output.
Inventors
- 👤 Hugh P. McAdams
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 08:55
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/70; G11C29/78; G11C29/785; G11C17/00; G11C17/14; G11C17/18; G11C29/83
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
144 words
A fuse circuit for a low-power semiconductor memory device or the like, comprising: a fuse device which is selectively rendered conductive or non-conductive, a power supply having first and second terminals, an inverter circuit having first and second transistors of opposite conductivity type, each transistor having a source-drain path and a gate, the source-drain paths of the transistors being connected in series between said first and second terminals of the power supply, the gates being connected to an input node, the juncture of said source-drain paths providing an output node, a third transistor having a source-drain path connecting said input node to one of said first and second terminals of the power supply, and having a gate connected to said output node, said fuse device being connected between said input node and the other of the first and second terminals of said power supply.
Claim 2
Dependent Claim
144 words
A fuse circuit for a low-power semiconductor memory device or the like, comprising: a fuse device which is selectively rendered conductive or non-conductive, a power supply having first and second terminals, an inverter circuit having first and second transistors of opposite conductivity type, each transistor having a source-drain path and a gate, the source-drain paths of the transistors being connected in series between said first and second terminals of the power supply, the gates being connected to an input node, the juncture of said source-drain paths providing an output node, a third transistor having a source-drain path connecting said input node to one of said first and second terminals of the power supply, and having a gate connected to said output node, said fuse device being connected between said input node and the other of the first and second terminals of said power supply.
Claim 3
Dependent Claim
12 words
A circuit according to claim 1 wherein said third transistor is N-channel.
Claim 4
Dependent Claim
12 words
A circuit according to claim 1 wherein said third transistor is P-channel.
Claim 5
Dependent Claim
28 words
A circuit according to claim 2 wherein said one of the first and second terminals of said power supply is a positive voltage and said other is ground.
Claim 6
Dependent Claim
28 words
A circuit according to claim 3 wherein said one of the first and second terminals of said power supply is ground and said other is a positive voltage.
Claim 7
Dependent Claim
18 words
A circuit according to claim 4 wherein said first transistor is P-channel and said second transistor is N-channel.
Claim 8
Dependent Claim
18 words
A circuit according to claim 5 wherein said first transistor is N-channel and said second transistor is P-channel.
Claim 9
Dependent Claim
148 words
A fuse circuit for a low-power semiconductor memory device or the like, comprising: a fuse element which is selectively rendered conductive or non-conductive, a power supply having a first terminal at at positive voltage and a second terminal at ground potential, an inverter circuit having a first P-channel transistor and a second N-channel transistor, each of the first and second transistors having a source-drain path and a gate, the source-drain paths of the first and second transistors coupled to an input node, the juncture of said source-drain paths of the first and second transistors being coupled to an output node, a third N-channel transistor having a source-drain path coupling said input node to one of said second terminal of the power supply, and having a gate coupled to said output node, said fuse element being coupled between said input node and said second terminal of said power supply.
Claim 10
Dependent Claim
148 words
A fuse circuit for a low-power semiconductor memory device or the like, comprising: a fuse element which is selectively rendered conductive or non-conductive, a power supply having a first terminal at at positive voltage and a second terminal at ground potential, an inverter circuit having a first P-channel transistor and a second N-channel transistor, each of the first and second transistors having a source-drain path and a gate, the source-drain paths of the first and second transistors coupled to an input node, the juncture of said source-drain paths of the first and second transistors being coupled to an output node, a third N-channel transistor having a source-drain path coupling said input node to one of said second terminal of the power supply, and having a gate coupled to said output node, said fuse element being coupled between said input node and said second terminal of said power supply.
Claim 11
Dependent Claim
170 words
A fuse circuit for a low-power semiconductor memory device or the like, comprising: a fuse element which is selectively rendered conductive or non-conductive, a power supply having a first terminal at a positive voltage and a second terminal at a ground potential, an inverter circuit having a first P-channel transistor and a second N-channel transistor, each of the first and second transistors having a source-drain path and a gate, the source-drain paths of the first and second transistors being connected in series between said first and second terminals of the power supply, the gates of the first and second transistors being coupled to an input node, the juncture of said source-drain paths of the first and second transistors being coupled to an output node, a third P-channel transistor having a source-drain path coupling said input node to said first terminal of the power supply, and having a gate coupled to said output node, said fuse element being coupled between said input node and said second terminal of said power supply.
Claim 12
Dependent Claim
170 words
A fuse circuit for a low-power semiconductor memory device or the like, comprising: a fuse element which is selectively rendered conductive or non-conductive, a power supply having a first terminal at a positive voltage and a second terminal at a ground potential, an inverter circuit having a first P-channel transistor and a second N-channel transistor, each of the first and second transistors having a source-drain path and a gate, the source-drain paths of the first and second transistors being connected in series between said first and second terminals of the power supply, the gates of the first and second transistors being coupled to an input node, the juncture of said source-drain paths of the first and second transistors being coupled to an output node, a third P-channel transistor having a source-drain path coupling said input node to said first terminal of the power supply, and having a gate coupled to said output node, said fuse element being coupled between said input node and said second terminal of said power supply.
References Cited (Backward Citations)
US4532607A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-11-03 | 1990-05-05 | 1990-11-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-11-03 | 1994-05-05 | 1994-11-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-11-03 | 1998-05-05 | 1998-11-04 | $7700.00 | Window Closed / Lapsed |