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US4619695A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for producing high-purity metal targets for LSI electrodes

Assignee: Nihon Kogyo KK
•
Filing: 1984-07-26
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Granted: 1986-10-28
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Expires: 2004-07-26
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Abstract

Abstract A high-purity high-melting metal target or high-purity high-melting metal silicide target for LSI electrodes having an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb is provided by a wet purification process followed by a series of dry processings. Preferably the high-melting metal is molybdenum, tungsten, titanium, niobium or tantalum. More preferably, the high-melting metal is molybdenum.

Inventors

  • 👤 Hideo Oikawa
  • 👤 Takao Amazawa
  • 👤 Nakahachiro Honma
  • 👤 Hideo Miyazaki
  • 👤 Iwao Kyono
  • 👤 Nobuyuki Mori
  • 👤 Yoshiharu Katoh
  • 👤 Masami Kuroki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 13:04
CPC Classifications
C; C22; C22B; C22B34/00; C22B34/30; C22B34/34; H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01316; H10D64/01318; H10D64/0132; H10D64/60; H10D64/66; H10D64/665; H10D64/667; H10D64/668; H10P; H10P14/00; H10P14/40; H10P14/42; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12674; Y10T428/12771; Y10T428/12806; Y10T428/12826; Y10T428/12833

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 150 words
A process for producing a high-purity metal target for the formation of LSI electrodes, in which the target has an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb, comprising the steps of dissolving a metal or metal compound, the metal selected from the group consisting of molybdenum and tungsten, into an acid or ammonia to form an aqueous metal-containing solution, filtering the aqueous solution causing the aqueous metal-containing solution to form metal-containing crystals by adjusting temperature and composition of the solution, collecting the crystals by solid-liquid separation, washing and drying the collected crystals, reducing the dried crystals by heating in the presence of high-purity hydrogen to prepare a high-purity metal powder, compacting the powder, sintering the compact, electron beam melting the sintered compact to produce a high-purity metal ingot, and thereafter plastically working the ingot with subsequent machining.
Claim 2
Dependent Claim 150 words
A process for producing a high-purity metal target for the formation of LSI electrodes, in which the target has an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb, comprising the steps of dissolving a metal or metal compound, the metal selected from the group consisting of molybdenum and tungsten, into an acid or ammonia to form an aqueous metal-containing solution, filtering the aqueous solution causing the aqueous metal-containing solution to form metal-containing crystals by adjusting temperature and composition of the solution, collecting the crystals by solid-liquid separation, washing and drying the collected crystals, reducing the dried crystals by heating in the presence of high-purity hydrogen to prepare a high-purity metal powder, compacting the powder, sintering the compact, electron beam melting the sintered compact to produce a high-purity metal ingot, and thereafter plastically working the ingot with subsequent machining.
Claim 3
Dependent Claim 11 words
The process according to claim 1 wherein the metal is molybdenum.
Claim 4
Dependent Claim 28 words
The process according to claim 1 wherein the acid is selected from the group consisting of hydrochloric, nitric, hydrofluoric, sulfuric or a combination of two or more acids.
Claim 5
Dependent Claim 23 words
The process according to claim 1 which further includes the step of redissolving said crystals followed by recrystallizing to obtain further purified crystals.

References Cited (Backward Citations)

CA670785A Cited
JPS474130Y1 Cited
US3933474A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-10-27 1990-04-28 1990-10-28 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-10-27 1994-04-28 1994-10-28 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-10-27 1998-04-28 1998-10-28 $7700.00 Window Closed / Lapsed

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