Precharge circuit for enhancement mode memory circuits

Claim 1

A field-effect transistor circuit, employing only enhancement transistors, for controlling the passage of at least one controlled signal, after a first predetermined relative time, from an input terminal to an output terminal comprising: at least one pass transistor having a pass transistor gate, an input node and an output node respectively connected to said input terminal and an output terminal, for passing to said input terminal to said output terminal; receiving means for receiving a cycle-initiating signal; pulse-forming means, responsive to said receiving means, for forming a precharge pulse signal having a predetermined duration and a precharge voltage magnitude greater than a power supply voltage magnitude, said precharge pulse signal reaching said precharge voltage magnitude said first predetermined relative time after said cycle-initiating signal; distributing means for distributing said precharge pulse signal to at least one gate control means for controlling the voltage on said pass transistor gate in response to said precharge pulse signal, said gate control means including means for forming an electrical path, for raising said pass transistor gate to said power supply voltage magnitude, between a switching node and said pass transistor gate; and controllable current means, connected to said switching node, for supplying current at a voltage substantially equal to said supply voltage to said switching node at said predetermined relative time after said cycle-initiating signal has been received by said receiving means, whereby said pass transistor gate is brought substantially to said power supply voltage, and also for establishing a path from said pass transistor gate to ground at a second predetermined relative time after said first predetermined relative time.