US4616244A
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Non-single-crystal semiconductor light emitting device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1984-08-30
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Granted: 1986-10-07
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Expires: 2004-08-30
Abstract
Abstract A non-single-crystal semiconductor light emitting device is provided with a first electrode or a first laminate member of the first electrode and P (or N) type first non-single-crystal semiconductor layer formed on the first electrode, a non-single-crystal semiconductor laminate member made up a plurality m (where m≧3) of non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m formed on the first electrode or the first laminate member and a second electrode or a second laminate member of a N(or P) type second non-single-crystal semiconductor layer formed on the non-single-crystal semiconductor laminate member and a second electrode formed on the second non-single-crystal semiconductor layer. The energy gaps E g1 , E g2 , . . . and E gm of the non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m bear such relationships as E g1 >E g2 <E g3 , E g3 >E g4 <E g5 , . . . E.sub.(m-2) >E g (m-1) <E gm .
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 19:29
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10H20/81; H10H20/817; H10H20/818; H10H20/822; H10H20/826; H10H20/833
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
186 words
A non-single-crystal semiconductor light emitting device comprising: a first electrode; a first non-single-crystal semiconductor layer of a first conductivity type, formed on said first electrode and making ohmic contact therewith; a non-single-crystal semiconductor region formed in layers on said first non-single-crystal semiconductor layer; a second non-single-crystal semiconductor layer of a second conductivity type reverse from the first conductivity type and formed on said non-single-crystal semiconductor region; and a second electrode formed on said second non-single-crystal semiconductor layer and making ohmic contact therewith; wherein said non-single-crystal semiconductor region is formed by a non-single-crystal semiconductor laminate member made up of a plurality m (where m≧3) of third non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m sequentially laminate in this order, and wherein the energy gaps Eg 1 , Eg 2 , . . . and Eg m of said third non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m bear such relationships as Eg 1 >Eg 2 <Eg 3 , Eg 3 >Eg 4 <Eg 5 , . . . Eg.sub.(m-2) <Eg.sub.(m-1) >Eg m .
Claim 2
Dependent Claim
186 words
A non-single-crystal semiconductor light emitting device comprising: a first electrode; a first non-single-crystal semiconductor layer of a first conductivity type, formed on said first electrode and making ohmic contact therewith; a non-single-crystal semiconductor region formed in layers on said first non-single-crystal semiconductor layer; a second non-single-crystal semiconductor layer of a second conductivity type reverse from the first conductivity type and formed on said non-single-crystal semiconductor region; and a second electrode formed on said second non-single-crystal semiconductor layer and making ohmic contact therewith; wherein said non-single-crystal semiconductor region is formed by a non-single-crystal semiconductor laminate member made up of a plurality m (where m≧3) of third non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m sequentially laminate in this order, and wherein the energy gaps Eg 1 , Eg 2 , . . . and Eg m of said third non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m bear such relationships as Eg 1 >Eg 2 <Eg 3 , Eg 3 >Eg 4 <Eg 5 , . . . Eg.sub.(m-2) <Eg.sub.(m-1) >Eg m .
Claim 3
Dependent Claim
162 words
A non-single-crystal semiconductor light emitting device comprising: a first electrode; a first non-single-crystal semiconductor layer of a first conductivity type, formed on said first electrode to make ohmic contact therewith; a non-single-crystal semiconductor region formed in layers on said first non-single-crystal semiconductor layer; and a second electrode formed on said non-single-crystal semiconductor region to make contact therewith; wherein said non-single-crystal semiconductor region is formed by a non-single-crystal semiconductor laminate member made up of a plurality m (where m≧3) of second non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m sequentially laminate in this order, and wherein the energy gaps Eg 1 , Eg 2 , . . . and Eg m of the second non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m bear such relationships as Eg 1 >Eg 2 <Eg 3 , Eg 3 >Eg 4 <Eg 5 , . . . Eg.sub.(m-2) >Eg.sub.(m-1) < Eg m .
Claim 4
Dependent Claim
162 words
A non-single-crystal semiconductor light emitting device comprising: a first electrode; a first non-single-crystal semiconductor layer of a first conductivity type, formed on said first electrode to make ohmic contact therewith; a non-single-crystal semiconductor region formed in layers on said first non-single-crystal semiconductor layer; and a second electrode formed on said non-single-crystal semiconductor region to make contact therewith; wherein said non-single-crystal semiconductor region is formed by a non-single-crystal semiconductor laminate member made up of a plurality m (where m≧3) of second non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m sequentially laminate in this order, and wherein the energy gaps Eg 1 , Eg 2 , . . . and Eg m of the second non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m bear such relationships as Eg 1 >Eg 2 <Eg 3 , Eg 3 >Eg 4 <Eg 5 , . . . Eg.sub.(m-2) >Eg.sub.(m-1) < Eg m .
Claim 5
Dependent Claim
164 words
A non-single-crystal semiconductor light emitting device comprising: a first electrode; a non-single-crystal semiconductor region formed in layers on said first electrode to make rectifying contact therewith; a first non-single-crystal semiconductor layer of a first conductivity type and formed on said non-single-crystal semiconductor region, and a second electrode layer formed on said first non-single-crystal semiconductor layer to make ohmic contact therewith; wherein said non-single-crystal semiconductor region is formed by a non-single-crystal semiconductor laminate member made up of a plurality m (where m≧3) of second non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m sequentially laminate in this order, and wherein the energy gaps Eg 1 , Eg 2 , . . . and Eg m of the second non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m bear such relationships as Eg 1 >Eg 2 <Eg 3 , Eg 3 >Eg 4 <Eg 5 , . . . Eg.sub.(m-2) >Eg.sub.(m-1) <Eg m .
Claim 6
Dependent Claim
164 words
A non-single-crystal semiconductor light emitting device comprising: a first electrode; a non-single-crystal semiconductor region formed in layers on said first electrode to make rectifying contact therewith; a first non-single-crystal semiconductor layer of a first conductivity type and formed on said non-single-crystal semiconductor region, and a second electrode layer formed on said first non-single-crystal semiconductor layer to make ohmic contact therewith; wherein said non-single-crystal semiconductor region is formed by a non-single-crystal semiconductor laminate member made up of a plurality m (where m≧3) of second non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m sequentially laminate in this order, and wherein the energy gaps Eg 1 , Eg 2 , . . . and Eg m of the second non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m bear such relationships as Eg 1 >Eg 2 <Eg 3 , Eg 3 >Eg 4 <Eg 5 , . . . Eg.sub.(m-2) >Eg.sub.(m-1) <Eg m .
Claim 7
Dependent Claim
145 words
A non-single-crystal semiconductor light emitting device comprising: a first electrode; a non-single-crystal semiconductor region formed in layers on the first electrode to make rectifying contact therewith; and a second electrode formed on said non-single-crystal semiconductor region to make rectifying contact therewith; wherein said non-single-crystal semiconductor region is formed by a non-single-crystal semiconductor laminate member made up of a plurality m (where m≧3) of non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m sequentially laminate in this order, and wherein the energy gaps Eg 1 , Eg 2 , . . . and Eg m of said non-single-crystal semiconductor layers M 1 , M 2 , M 3 , . . . and M m bear such relationships as Eg 1 >Eg 2 <Eg 3 , Eg 3 >Eg 4 <Eg 5 , . . . Eg(m-2)>Eg.sub.(m-1) <Eg m .
Claim 8
Dependent Claim
145 words
A non-single-crystal semiconductor light emitting device comprising: a first electrode; a non-single-crystal semiconductor region formed in layers on the first electrode to make rectifying contact therewith; and a second electrode formed on said non-single-crystal semiconductor region to make rectifying contact therewith; wherein said non-single-crystal semiconductor region is formed by a non-single-crystal semiconductor laminate member made up of a plurality m (where m≧3) of non-single-crystal semiconductor layers M 1 , M 2 , . . . and M m sequentially laminate in this order, and wherein the energy gaps Eg 1 , Eg 2 , . . . and Eg m of said non-single-crystal semiconductor layers M 1 , M 2 , M 3 , . . . and M m bear such relationships as Eg 1 >Eg 2 <Eg 3 , Eg 3 >Eg 4 <Eg 5 , . . . Eg(m-2)>Eg.sub.(m-1) <Eg m .
References Cited (Backward Citations)
US4527179A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1989-10-06 | 1990-04-07 | 1990-10-07 | $2000.00 | Window Closed / Lapsed |
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