US4614923A
Expired / Lapsed
US
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Method of suppressing magnetostatic waves in magnetic garnet films for microwave circuit applications
Assignee: Leonardo SpA
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Filing: 1985-02-21
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Granted: 1986-09-30
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Expires: 2005-02-21
Abstract
Abstract Method for the controlled suppression of magnetostatic waves within magnetic garnet films for microwave circuit applications, based upon the adoption of multilayer structures of epitaxial garnet films of low magnetic losses and high magnetic losses.
Inventors
- 👤 Riccardo Roveda
- 👤 Carlo Di Gregorio
- 👤 Paolo De Gasperis
- 👤 Giuseppe Miccoli
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 03:54
CPC Classifications
B; B82; B82Y; B82Y25/00; H; H01; H01F; H01F10/00; H01F10/32; H01F10/3209; H03; H03H; H03H2/00; H03H2/001
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
56 words
A method for the controlled suppression of magnetostatic waves in garnet films for microwave applications comprising: applying to a passive dielectric substrate at least one epitaxial layer of a low magnetic loss Yttrium-Iron-Garnet film; and applying to said low loss Yttrium-Iron Garnet film at least one epitaxial layer of a high magnetic loss Calcium-Yttrium-Iron Garnet film.
Claim 2
Independent Claim
56 words
A method for the controlled suppression of magnetostatic waves in garnet films for microwave applications comprising: applying to a passive dielectric substrate at least one epitaxial layer of a low magnetic loss Yttrium-Iron-Garnet film; and applying to said low loss Yttrium-Iron Garnet film at least one epitaxial layer of a high magnetic loss Calcium-Yttrium-Iron Garnet film.
Claim 3
Dependent Claim
32 words
The method as defined in claim 1 wherein said high magnetic loss garnet film is treated with a relaxation ion selected from the group consisting of Fe 2+ and Fe 4+ .
Claim 4
Dependent Claim
102 words
The method as defined in claim 2, further comprising the step of effecting total charge compensation of said relaxation ions in said high loss garnet film by partially substituting within garnet of said high loss film an ion selected from the group consisting of monovalent diamagnetic ions Li + , bivalent diamagnetic ions Ca 2+ , Mg 2+ , Be 2+ , Zn 2+ and Sr 2+ , tetravalent diamagnetic ions Ge 4+ , Si 4+ , Th 4+ , Hf 4+ , Ti 4+ and Sm 4+ , and pentavalent diamagnetic ions V 5+ , Nb 5+ and Ta 5+ .
Claim 5
Dependent Claim
38 words
The method as defined in claim 1 wherein said high magnetic loss garnet film is treated with a relaxation ion selected from the group consisting of Co 2+ , Er 3+ , Ho 3+ and Oy 3+ .
Claim 6
Dependent Claim
35 words
The method as defined in claim 1 wherein said high loss garnet film is (Ca Y) 3 Fe 5 O 12 and said low loss garnet film is Y 3 Fe 5 O 12 .
Claim 7
Dependent Claim
31 words
The method as defined in claim 5, further comprising a second high loss garnet film, wherein said second high loss garnet film is (Ca Y) 3 Fe 5 O 12 .
Claim 8
Dependent Claim
49 words
A microwave signal processing device for the controlled suppression of magnetostatic waves in magnetic garnet films consisting of, in contacting relationship: a passive dielectric substrate; at least one epitaxial layer of low loss Yttrium-Iron Garnet film; and at least one epitaxial layer of high magnetic loss Calcium-Yttrium-Iron Garnet film.
Claim 9
Dependent Claim
49 words
A microwave signal processing device for the controlled suppression of magnetostatic waves in magnetic garnet films consisting of, in contacting relationship: a passive dielectric substrate; at least one epitaxial layer of low loss Yttrium-Iron Garnet film; and at least one epitaxial layer of high magnetic loss Calcium-Yttrium-Iron Garnet film.
Claim 10
Dependent Claim
35 words
A device as defined in claim 7 wherein said low loss garnet film is Y 3 Fe 5 O 12 and said high loss garnet film is (Ca Y) 3 Fe 5 O 12 .
Claim 11
Dependent Claim
31 words
A device as defined in claim 8, further comprising a second high loss garnet film, wherein said second high loss garnet film is (Ca Y) 3 Fe 5 O 12 .
Claim 12
Dependent Claim
27 words
A device as defined in claim 7 wherein said epitaxial layer of said high magnetic loss garnet film forms a channel on said low loss garnet film.
Claim 13
Dependent Claim
33 words
The device as defined in claim 7 wherein said high magnetic loss garnet film includes a relaxation ion selected from the group consisting of Fe 2+ , Fe 3+ and Fe 4+ .
Claim 14
Dependent Claim
36 words
The device as defined in claim 7 wherein said high magnetic loss garnet film includes a relaxation ion selected from the group consisting of Co 2+ , Er 3+ , Ho 3+ and Dy 3+ .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-09-29 | 1990-03-31 | 1990-09-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-29 | 1994-03-31 | 1994-09-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-29 | 1998-03-31 | 1998-09-30 | $7700.00 | Window Closed / Lapsed |