US4612562A
Expired / Lapsed
US
⏱️ 0.0 years remaining
PNPN switch device with capacitor formed outside active device areas
Assignee: Toshiba Corp
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Filing: 1985-06-04
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Granted: 1986-09-16
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Expires: 2005-06-04
Abstract
Abstract A PNPN switch device with a circuit for preventing an error due to a surge voltage. The circuit comprises two capacitors. The first capacitor is formed in a P-type gate region. The second capacitor of a capacitance of an insulation layer sandwiched between a MOS gate electrode and a capacitor electrode is provided outside the P-type gate region.
Inventors
- 👤 Hideaki Motojima
- 👤 Hiroki Takayama
- 👤 Jun-ichi Ohura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:25
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D18/00; H10D18/80; H10D84/00; H10D84/101; H10D84/131; H10D84/133; H10D84/138; H10D84/40; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/26; H10F30/263; H10W; H10W20/00; H10W20/40; H10W20/495
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
195 words
A PNPN switch device comprising: a first N-type region; a first P-type region formed in the surface region of said first N-type region; a second P-type region formed in the surface region of said first N-type region and set apart from said first P-type region; a second N-type region formed in the surface region of said second P-type region to be used as a cathode; a third N-type region formed in the surface region of said second P-type region and set apart from said second N-type region; an insulation layer formed on said second P-type region; a first conductor layer formed on said insulation layer and extending over said second N-type region and said third N-type region; a first electrode short-circuiting said second P-type region and said third N-type region; a second electrode formed on said first P-type region; a third electrode formed on said second N-type region; a resistor formed on said insulation layer and connected at one end to said first conductor layer and at the other end to said first electrode; and a capacitor element formed outside said second P-type region and equivalently connected between said first conductor layer and second electrode.
Claim 2
Dependent Claim
195 words
A PNPN switch device comprising: a first N-type region; a first P-type region formed in the surface region of said first N-type region; a second P-type region formed in the surface region of said first N-type region and set apart from said first P-type region; a second N-type region formed in the surface region of said second P-type region to be used as a cathode; a third N-type region formed in the surface region of said second P-type region and set apart from said second N-type region; an insulation layer formed on said second P-type region; a first conductor layer formed on said insulation layer and extending over said second N-type region and said third N-type region; a first electrode short-circuiting said second P-type region and said third N-type region; a second electrode formed on said first P-type region; a third electrode formed on said second N-type region; a resistor formed on said insulation layer and connected at one end to said first conductor layer and at the other end to said first electrode; and a capacitor element formed outside said second P-type region and equivalently connected between said first conductor layer and second electrode.
Claim 3
Dependent Claim
85 words
A PNPN switch device according to claim 1 wherein said capacitor element comprises a second conductor layer formed on an insulation layer which is formed on the portion of said first N-type region which is outside said second P-type region, a third conductor layer formed on an insulation layer which is formed on said second conductor layer, a first line layer connecting said second electrode and said third conductor layer, and a second line layer connecting said first conductor layer and said second conductor layer.
Claim 4
Dependent Claim
198 words
A PNPN switch device comprising: a first N-type region; a first P-type region formed in the surface region of said first N-type region; a second P-type region formed in the surface region of said first N-type region and set apart from said first P-type region; a second N-type region formed in the surface region of said second P-type region to be used as a cathode; a third N-type region formed in the surface region of said second P-type region and set apart from said second N-type region; a first insulation layer formed on said second P-type region; a first conductor layer formed on said first insulation layer and extending over said second N-type region and said third N-type region; a first electrode short-circuiting said second P-type region and said third N-type region; a second electrode formed on said first P-type region; a third electrode formed on said second N-type region; a resistor formed on said insulation layer and connected at one end to said first conductor layer and at the other end to said first electrode; and a capacitor element formed outside said second P-type region and equivalently connected between said first conductor layer and first N-type region.
Claim 5
Dependent Claim
198 words
A PNPN switch device comprising: a first N-type region; a first P-type region formed in the surface region of said first N-type region; a second P-type region formed in the surface region of said first N-type region and set apart from said first P-type region; a second N-type region formed in the surface region of said second P-type region to be used as a cathode; a third N-type region formed in the surface region of said second P-type region and set apart from said second N-type region; a first insulation layer formed on said second P-type region; a first conductor layer formed on said first insulation layer and extending over said second N-type region and said third N-type region; a first electrode short-circuiting said second P-type region and said third N-type region; a second electrode formed on said first P-type region; a third electrode formed on said second N-type region; a resistor formed on said insulation layer and connected at one end to said first conductor layer and at the other end to said first electrode; and a capacitor element formed outside said second P-type region and equivalently connected between said first conductor layer and first N-type region.
Claim 6
Dependent Claim
92 words
A PNPN switch device according to claim 3 wherein said capacitor element comprises a second conductor layer formed over the portion of said first N-type region which is outside said second P-type region, said second conductor layer having a second insulation layer formed between said second conductor layer and said first N-type region, and said second conductor layer constituting one electrode of a capacitor which comprises said second conductor layer and said second insulation layer as a dielectric, and a line layer connecting said first conductor layer and said second conductor layer.
Claim 7
Dependent Claim
27 words
A PNPN switch device according to claim 4 wherein said first and second conductor layers are made of a material different from that of said line layer.
Claim 8
Dependent Claim
30 words
A PNPN switch device according to claim 4 wherein said second conductor layer and said line layer are made of a material different from that of said first conductor layer.
Claim 9
Dependent Claim
23 words
A PNPN switch device according to claim 4 wherein said first and second conductor layers and said line layer are made of material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-09-15 | 1990-03-17 | 1990-09-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-15 | 1994-03-17 | 1994-09-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-15 | 1998-03-17 | 1998-09-16 | $7700.00 | Window Closed / Lapsed |