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US4612410A Expired / Lapsed US ⏱️ 0.0 years remaining

Contact system for thin film solar cells

Assignee: Nukem GmbH
•
Filing: 1984-10-26
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Granted: 1986-09-16
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Expires: 2004-10-26
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Abstract

Abstract A contact system for thin film solar cells, which guarantees that charge carrier transport without a barrier layer takes place from the semiconductor layer facing the light source to the front contact in such a manner that, among others, long term negative influences by the front contact on the semiconductor layer will not take place. To this end the front contact is rendered passive against the semiconductor layer by modifying its chemical potential, at least in the actual contact area, to be matched to the chemical potential of the semiconductor layer, or by forming a chemically inert system acting as a reaction barrier between the front contact and the semiconductor layer.

Inventors

  • 👤 Gert Hewig
  • 👤 Hans Huschka
  • 👤 Bernd Schurich
  • 👤 Jorg Worner

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 23:31
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/20; H10F77/206; H10F77/211; H10F71/00; H10F71/129; Y; Y02; Y02E; Y02E10/00; Y02E10/50

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 63 words
A thin film solar cell with an upper semiconductor layer adapted to face a source of light and a front contact deposited on said semiconductor layer, wherein a passivation layer is deposited onto said front contact before said front contact is deposited onto said semiconductor layer, the chemical potential of said passivation layer being matched to the chemical potential of the semiconductor layer.
Claim 2
Dependent Claim 63 words
A thin film solar cell with an upper semiconductor layer adapted to face a source of light and a front contact deposited on said semiconductor layer, wherein a passivation layer is deposited onto said front contact before said front contact is deposited onto said semiconductor layer, the chemical potential of said passivation layer being matched to the chemical potential of the semiconductor layer.
Claim 3
Dependent Claim 33 words
A thin film solar cell according to claim 1, wherein said front contact comprises the same material as said semiconductor layer, at least within the region of actual contact with said semiconductor layer.
Claim 4
Dependent Claim 69 words
A thin film solar cell according to claim 2 having an upper semiconductor layer of Cu 2 S or Cu 2 O, adapted to face a source of light, a lower, contiguous CdS layer, and a front contact of copper deposited on said upper semiconductor layer, wherein at least that area of the copper front contact coming into contact with the semiconductor layer is respectively is sulfidized or oxidized.

References Cited (Backward Citations)

US4167805A Cited
US4267398A Cited
US4251286A Cited
US4283591A Cited
US4366336A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-09-15 1990-03-17 1990-09-16 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-09-15 1994-03-17 1994-09-16 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-09-15 1998-03-17 1998-09-16 $7700.00 Window Closed / Lapsed

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