High-frequency circuit device with an annular capacitor on the back of an insulated substrate

Claim 1

In a high-frequency circuit device composed of hybrid ICs, including an insulated substrate, an active component fabricated on one side of said insulated substrate and including a ground terminal for grounding high-frequency signal components, a first electrode fabricated on said one side of said insulated substrate and connected to said ground terminal, a ground conductor on said insulated substrate, and a capacitor connected between said first electrode and said ground conductor, the improvement comprising said ground conductor being fabricated on the other side of said insulated substrate, said capacitor being formed by an annular dielectric body having a peripheral surface thereof in contact with said ground conductor, a hole formed through said insulated substrate positioned substantially in the center of said annular dielectric body, a second electrode fabricated on said other side of said insulated substrate in confronting relation to said ground conductor across said annular dielectric body and connected to said first electrode through said hole in said insulated substrate, whereby high-frequency signal components of said active component are grounded through said ground terminal connected to said first electrode and through said hole to said second electrode, said annular dielectric body, and said ground conductor.