US4611224A
Expired / Lapsed
US
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Semiconductor radiation detector
Assignee: Fuji Electric Co Ltd
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Filing: 1984-08-14
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Granted: 1986-09-09
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Expires: 2004-08-14
Abstract
Abstract In the specific embodiments described in the specification, a semiconductor radiation detector has a single-crystal silicon substrate coated with an amorphous silicon film containing an impurity to widen the mobility band gap of the semiconductor to reduce the reverse bias leakage current. Phosphorus and carbon are disclosed as impurities for the amorphous silicon film.
Inventors
- 👤 Yasukazu Seki
- 👤 Noritada Sato
- 👤 Masaya Yabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:43
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/222; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
88 words
A semiconductor radiation detector comprising: a semiconductor bulk region of a first conductivity type having a principal surface; a first amorphous semiconductor layer of a second conductivity type formed on a first portion of the principal surface of the bulk region; a second armorphous semiconductor layer formed on a second portion of the principal surface surrounding the first portion, the second amorphous layer being substantially undoped; a first electrode in electrical contact with the bulk region; and a second electrode in electrical contact with the first amorphous layer.
Claim 2
Dependent Claim
88 words
A semiconductor radiation detector comprising: a semiconductor bulk region of a first conductivity type having a principal surface; a first amorphous semiconductor layer of a second conductivity type formed on a first portion of the principal surface of the bulk region; a second armorphous semiconductor layer formed on a second portion of the principal surface surrounding the first portion, the second amorphous layer being substantially undoped; a first electrode in electrical contact with the bulk region; and a second electrode in electrical contact with the first amorphous layer.
Claim 3
Dependent Claim
39 words
A semiconductor radiation detector according to claim 1, wherein the bulk semiconductor region is p-type single crystal silicon, and the first amorphous layer is silicon and doped with an impurity selected from the group consisting of phosphorus and carbon.
Claim 4
Dependent Claim
28 words
A semiconductor radiation detector according to claim 1, wherein the first amorphous layer is selected from the group consisting of amorphous silicon, amorphous silicon carbide and amorphous carbon.
References Cited (Backward Citations)
JPS5760875A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-09-08 | 1990-03-10 | 1990-09-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-08 | 1994-03-10 | 1994-09-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-08 | 1998-03-10 | 1998-09-09 | $7700.00 | Window Closed / Lapsed |