US4609932A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Nonplanar ion-sensitive field-effect transistor devices
Assignee: Intersil Corp
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Filing: 1985-03-18
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Granted: 1986-09-02
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Expires: 2005-03-18
Abstract
Abstract Three-dimensional diode arrays have been produced in semiconductor wafers by a two-step process involving laser drilling and solid-state diffusion. Holes are first produced in the wafer in various arrays by laser drilling. Under suitable conditions, laser drilling causes little or no damage to the wafer. Cylindrical P-N junctions are then formed around the laser-drilled holes by diffusing an impurity into the wafer from the walls of the hole. A variety of distinctly different ISFET devices is produced.
Inventors
- 👤 Thomas R. Anthony
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 04:38
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/124; H10D62/126; G; G01; G01N; G01N27/00; G01N27/26; G01N27/403; G01N27/414; H10D62/13; H10D62/149
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
129 words
A nonplanar ISFET device comprising: a semiconductor body of a first conductivity type having first and second opposing major surfaces and first and second, spaced-apart, high-aspect-ratio bores extending into the body from the first major surface thereof; first and second impurity regions of a second conductivity type in the body, each one concentrically surrounding a respective one of the first and the second bores and extending between the first and the second major surface of the body; first and second connection means making electrical contact to the first and second impurity zones, respectively, from the first major surface of the body; and an ion-sensitive insulating layer overlying the second major surface of the body extending at least between the first and second impurity zones and covering a region therebetween.
Claim 2
Dependent Claim
129 words
A nonplanar ISFET device comprising: a semiconductor body of a first conductivity type having first and second opposing major surfaces and first and second, spaced-apart, high-aspect-ratio bores extending into the body from the first major surface thereof; first and second impurity regions of a second conductivity type in the body, each one concentrically surrounding a respective one of the first and the second bores and extending between the first and the second major surface of the body; first and second connection means making electrical contact to the first and second impurity zones, respectively, from the first major surface of the body; and an ion-sensitive insulating layer overlying the second major surface of the body extending at least between the first and second impurity zones and covering a region therebetween.
Claim 3
Dependent Claim
43 words
The ISFET device of claim 1 wherein the first and the second connection means each comprise a metallic contact overlying the first major surface of the body and being in contact with a respective one of the first and the second impurity regions.
Claim 4
Dependent Claim
25 words
The ISFET device of claim 1 wherein the ion-sensitive insulating layer comprises a thermally grown oxide layer overlying the second major surface of the body.
Claim 5
Dependent Claim
91 words
The ISFET device of claim 1 wherein the first and the second bores are respectively included in a first and a second group of bores extending into the semiconductor body from the first major surface thereof, each group comprising a plurality of relatively closely-spaced, high-aspect-ratio bores and being spaced apart from the other group, and the first and the second impurity regions each comprise a plurality of impurity zones each one concentrically surrounding a different one of the bores of a respective group and overlapping with one or more neighboring zones.
Claim 6
Dependent Claim
35 words
The ISFET device of claim 4 wherein the bores of each of the first and the second groups are regularly spaced and generally disposed along a respective one of two spaced-apart, substantially parallel straight lines.
Claim 7
Dependent Claim
29 words
The ISFET device of claim 4 wherein the bores of each of the first and the second groups are regularly spaced and generally disposed along spaced-apart, substantially concentric circles.
Claim 8
Dependent Claim
36 words
The ISFET device of claim 1 wherein the bores extend completely through the thickness of the body between the first and the second major surfaces of the body and are sealed with a suitable sealing material.
Claim 9
Dependent Claim
23 words
The ISFET device of claim 1 wherein the bores extend to within a predetermined distance of the second major surface of the body.
Claim 10
Dependent Claim
14 words
The ISFET device of claim 1 wherein the bores are formed by laser drilling.
Claim 11
Dependent Claim
26 words
The ISFET device of claim 1 wherein the semiconductor body is monocrystalline silicon, the first conductivity type is P-type and the second conductivity type is N-type.
Claim 12
Dependent Claim
14 words
The ISFET device of claim 4 wherein the bores are formed by laser drilling.
Claim 13
Dependent Claim
26 words
The ISFET device of claim 4 wherein the semiconductor body is monocrystalline silicon, the first conductivity type is P-type and the second conductivity type is N-type.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-09-01 | 1990-03-03 | 1990-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-01 | 1994-03-03 | 1994-09-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-01 | 1998-03-03 | 1998-09-02 | $7700.00 | Window Closed / Lapsed |