US4609426A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for monitoring etching
Assignee: Hitachi Ltd
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Filing: 1985-05-22
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Granted: 1986-09-02
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Expires: 2005-05-22
Abstract
Abstract This invention relates to a method and apparatus for monitoring etching. The monitor method comprises the steps of regulating a gas pressure inside a treating chamber, in which a sample is being etched by a dry etching process, to a pressure at which a emission line spectrum can be clarified, converting the gas whose pressure is regulated to plasma, and monitoring the etching state of the sample from the change of the intensity of the emission line spectrum with time. The monitor apparatus comprises exhaust means for discharging a gas from a treating chamber in which a sample is being etched by a dry etching process, plasma means for introducing the gas discharged from the treating chamber and converting it plasma, pressure regulation means for regulating the pressure of the gas at the plasma means to a pressure at which a emission line spectrum can be clarified, and spectrum detection means for detecting the emission line spectrum of the plasma at the plasma means, and detecting the change of the intensity of the detected emission line spectrum with time.
Inventors
- 👤 Yoshifumi Ogawa
- 👤 Masaharu Nishiumi
- 👤 Yoshie Tanaka
- 👤 Sadayuki Okudaira
- 👤 Shigeru Nishimatsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 04:28
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32917; H01J37/32935; H01J37/32972; G; G01; G01N; G01N21/00; G01N21/62; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; G01N2201/00; G01N2201/12; G01N2201/122
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
76 words
A method of monitoring etching which comprises the steps of: regulating a gas pressure in a treating chamber, in which a sample is being etched by a dry etching process, to a pressure at which a emission line spectrum can be clarified; Converting the gas having the pressure thereof regulated to plasma; and monitoring the etching state of said sample from the change of the intensity of the emission line spectrum of the plasma with time.
Claim 2
Independent Claim
76 words
A method of monitoring etching which comprises the steps of: regulating a gas pressure in a treating chamber, in which a sample is being etched by a dry etching process, to a pressure at which a emission line spectrum can be clarified; Converting the gas having the pressure thereof regulated to plasma; and monitoring the etching state of said sample from the change of the intensity of the emission line spectrum of the plasma with time.
Claim 3
Dependent Claim
28 words
The method of monitoring etching as defined in claim 1 wherein the gas having the pressure thereof regulated is converted to the plasma by discharge having great dissociation.
Claim 4
Dependent Claim
26 words
The method of monitoring etching as defined in claim 2 wherein the gas having the pressure thereof regulated is converted to the plasma by microwave discharge.
Claim 5
Dependent Claim
26 words
The method of monitoring etching as defined in claim 2 wherein the gas having the pressure thereof regulated is converted to the plasma by spark discharge.
Claim 6
Dependent Claim
33 words
The method of monitoring etching as defined in claim 1 wherein the pressure of the gas to be converted to the plasma is regulated to a pressure of up to 4.0×10 -2 Torr.
Claim 7
Dependent Claim
31 words
The method of monitoring etching as defined in claim 5 wherein said sample is a sample having a polycrystalline silicon film, and said emission line spectrum is that of silicon fluoride.
Claim 8
Dependent Claim
50 words
The method of monitoring etching as defined in claim 6 wherein said emission line spectrum of silicon fluoride is a emission line spectrum having a 440 nm wavelength, and the etching state of said sample is monitored from the change of the intensity of said emission line spectrum with time.
Claim 9
Independent Claim
103 words
An apparatus for monitoring etching which comprises: exhaust means for discharging a gas from a treating chamber in which a sample is being etched by a dry etching process; plasma means for introducing said gas discharged from said treating chamber and converting it to plasma; pressure regulation means for regulating the pressure of said gas at said plasma means to a pressure at which a emission line spectrum can be clarified; and spectrum detection means for detecting the emission line spectrum of said plasma at said plasma means, and detecting the change of the intensity of said detected emission line spectrum with time.
Claim 10
Independent Claim
103 words
An apparatus for monitoring etching which comprises: exhaust means for discharging a gas from a treating chamber in which a sample is being etched by a dry etching process; plasma means for introducing said gas discharged from said treating chamber and converting it to plasma; pressure regulation means for regulating the pressure of said gas at said plasma means to a pressure at which a emission line spectrum can be clarified; and spectrum detection means for detecting the emission line spectrum of said plasma at said plasma means, and detecting the change of the intensity of said detected emission line spectrum with time.
Claim 11
Dependent Claim
52 words
The apparatus for monitoring etching as defined in claim 8 wherein said plasma means consists of a sub-chamber into which said gas discharged from said treating chamber is introduced, a waveguide incorporating therein said sub-chamber and connected to a magnetron, and magnets generating microwave discharge together with said magnetron inside said sub-chamber.
Claim 12
Dependent Claim
70 words
The apparatus for monitoring etching as defined in claim 8 wherein said plasma means consists of a sub-chamber into which said gas discharged from said treating chamber is introduced, and projection members, each having one of the ends thereof connected to a power source and the other end disposed in such a manner as to face the other end of the other of said projection members inside said treating chamber.
Claim 13
Dependent Claim
25 words
The apparatus for monitoring etching as defined in claim 10 wherein said projection members are made of a material different from that of said sample.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-09-01 | 1990-03-03 | 1990-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-01 | 1994-03-03 | 1994-09-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-01 | 1998-03-03 | 1998-09-02 | $7700.00 | Window Closed / Lapsed |