US4608549A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Hydrogen-selective sensor and manufacturing method therefor
Assignee: New Cosmos Electric Co Ltd
•
Filing: 1983-12-22
•
Granted: 1986-08-26
•
Expires: 2003-12-22
Abstract
Abstract A hydrogen-selective gas sensor comprising a gas-sensing element including a semiconductor in a principal portion thereof, and a thin coat or layer inactive for oxidation of hydrogen formed over an entire surface of the gas-sensing element or at least on a surface of the semiconductor. The thin layer comprises one of silicon oxide, aluminum oxide, and silicon nitride, and is formed on the surface of the semiconductor by chemical deposition, the thin layer checking passage of molecules other than hydrogen molecules.
Inventors
- 👤 Kiyoshi Fukui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 04:29
CPC Classifications
G; G01; G01N; G01N27/00; G01N27/02; G01N27/04; G01N27/12
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
125 words
A hydrogen-selective gas sensor comprising a gas-sensing element composed of a semiconductor, and a thin layer inactive for oxidation of hydrogen and formed on a surface of said gas-sensing element so as to cover same, the thin layer being selected from the group consisting of silicon oxide, aluminum oxide and silicon nitride, and the semiconductor comprising a sintered piece of metal oxide selected from the group consisting of SnO 2 , ZnO, Co 3 O 4 , WO 3 , In 2 O 3 +Pt, α-Fe 2 O 3 and BaTiO 3 +Np 2 O 3 , wherein said thin layer has a diminished porosity to permit easy passage of hydrogen molecules, and to check passage of molecules of other gases greater than hydrogen molecules.
Claim 2
Dependent Claim
125 words
A hydrogen-selective gas sensor comprising a gas-sensing element composed of a semiconductor, and a thin layer inactive for oxidation of hydrogen and formed on a surface of said gas-sensing element so as to cover same, the thin layer being selected from the group consisting of silicon oxide, aluminum oxide and silicon nitride, and the semiconductor comprising a sintered piece of metal oxide selected from the group consisting of SnO 2 , ZnO, Co 3 O 4 , WO 3 , In 2 O 3 +Pt, α-Fe 2 O 3 and BaTiO 3 +Np 2 O 3 , wherein said thin layer has a diminished porosity to permit easy passage of hydrogen molecules, and to check passage of molecules of other gases greater than hydrogen molecules.
Claim 3
Dependent Claim
31 words
A gas sensor as defined in claim 1, wherein said thin layer is formed by causing a vapor to thermally decompose and deposit on said semiconductor heated to a predetermined temperature.
Claim 4
Independent Claim
160 words
A method of manufacturing a hydrogen-selective sensor having a gas-sensing element including a semiconductor in a principal portion thereof, and a thin layer inactive for oxidation of hydrogen formed on a surface of said gas-sensing element, comprising a step of forming said thin layer of a ceramic material inactive for oxidation of hydrogen by causing a vapor thermally decomposable to produce a desired ceramic material to decompose on a surface of said gas-sensing element heated to a certain temperature, thereby depositing said ceramic material onto the surface of said gas-sensing element, said semiconductor of said gas-sensing element comprising a sintered piece of a metal oxide which is selected from the group consisting of SnO 2 , ZnO, Co 3 O 4 , WO 3 , In 2 O 3 +Pt, α-Fe 2 O 3 and BaTiO 3 +Np 2 O 3 , wherein said ceramic material is selected from the group consisting of silicon oxide, aluminum oxide and silicon nitride.
Claim 5
Independent Claim
160 words
A method of manufacturing a hydrogen-selective sensor having a gas-sensing element including a semiconductor in a principal portion thereof, and a thin layer inactive for oxidation of hydrogen formed on a surface of said gas-sensing element, comprising a step of forming said thin layer of a ceramic material inactive for oxidation of hydrogen by causing a vapor thermally decomposable to produce a desired ceramic material to decompose on a surface of said gas-sensing element heated to a certain temperature, thereby depositing said ceramic material onto the surface of said gas-sensing element, said semiconductor of said gas-sensing element comprising a sintered piece of a metal oxide which is selected from the group consisting of SnO 2 , ZnO, Co 3 O 4 , WO 3 , In 2 O 3 +Pt, α-Fe 2 O 3 and BaTiO 3 +Np 2 O 3 , wherein said ceramic material is selected from the group consisting of silicon oxide, aluminum oxide and silicon nitride.
Claim 6
Dependent Claim
43 words
A method as defined in claim 3, wherein said vapor comprises vapor of a compound selected from the group consisting of alkyl silicon halides, silicon alkoxides, silicon alkoxides oligomer, alkyl silicon, and silicon halides, which are thermally decomposable to produce a silicon oxide.
Claim 7
Dependent Claim
37 words
A method as defined in claim 3, wherein said vapor comprises vapor of a compound selected from the group consisting of alkyl aluminum halides, aluminum alkoxide, and alkylaluminum, which are thermally decomposable to produce an aluminum oxide.
Claim 8
Dependent Claim
21 words
A method as defined in claim 3, wherein said vapor comprises a silicon amide compound decomposable to produce a silicon nitride.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-08-25 | 1990-02-24 | 1990-08-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-08-25 | 1994-02-24 | 1994-08-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-08-25 | 1998-02-24 | 1998-08-26 | $7700.00 | Window Closed / Lapsed |