Patent US6672884B1 successfully refreshed from Google Patents.
US4606033A
Expired / Lapsed
US
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Combination refractive index-guiding type and a gain-guiding type semiconductor laser device
Assignee: Sony Corp
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Filing: 1983-09-26
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Granted: 1986-08-12
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Expires: 2003-09-26
Abstract
Abstract A semiconductor laser device having a light emission region of a stripe pattern formed on a flat active layer, a portion carrying out a refractive index-guiding function formed on the light end portion of the light emission region and a portion carrying out a gain-guiding function formed inside the end portion of the light emission region.
Inventors
- 👤 Masamichi Sakamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 17:54
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/16; H01S5/20; H01S5/1053; H01S5/1064; H01S5/22; H01S5/223; H01S5/2231
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
103 words
A semiconductor laser device which includes a resonant cavity and in which a first cladding layer, a light emitting active layer, a second cladding layer, a capping layer and a second electrode are formed on a first major surface of a semiconductor substrate having a first electrode on its second major surface wherein the improvement comprises: (a) a stripe light emission region formed on said substantially flat active layer; (b) refractive index-guiding operating means formed on at least one end portion of said stripe light emission region; and (c) gain-guiding operating means formed at one inside portion of said stripe light emission region.
Claim 2
Dependent Claim
103 words
A semiconductor laser device which includes a resonant cavity and in which a first cladding layer, a light emitting active layer, a second cladding layer, a capping layer and a second electrode are formed on a first major surface of a semiconductor substrate having a first electrode on its second major surface wherein the improvement comprises: (a) a stripe light emission region formed on said substantially flat active layer; (b) refractive index-guiding operating means formed on at least one end portion of said stripe light emission region; and (c) gain-guiding operating means formed at one inside portion of said stripe light emission region.
Claim 3
Dependent Claim
23 words
A semiconductor laser device according to claim 1, wherein said at least one end portion of said stripe light emission region is thin.
Claim 4
Dependent Claim
22 words
A semiconductor laser device according to claim 2, wherein said stripe light emission region is formed by the ion injection of impurities.
Claim 5
Dependent Claim
129 words
A semiconductor laser device which includes a resonant cavity and in which a first cladding layer, a light emitting active layer, a second cladding layer, a capping layer and a second electrode are formed on a first major surface of a semiconductor substrate having a first electrode on its second major surface wherein the improvement comprises: (a) a stripe light emission region formed of an impurity layer in said semiconductor substrate over said active layer; and (b) a light absorption layer having a spacing substantially with the same width as said light emission region in at least one end portion of said light emission region and having a spacing wider than the width of said light emission region in at least one inside portion of said light emission region.
Claim 6
Dependent Claim
129 words
A semiconductor laser device which includes a resonant cavity and in which a first cladding layer, a light emitting active layer, a second cladding layer, a capping layer and a second electrode are formed on a first major surface of a semiconductor substrate having a first electrode on its second major surface wherein the improvement comprises: (a) a stripe light emission region formed of an impurity layer in said semiconductor substrate over said active layer; and (b) a light absorption layer having a spacing substantially with the same width as said light emission region in at least one end portion of said light emission region and having a spacing wider than the width of said light emission region in at least one inside portion of said light emission region.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-08-11 | 1990-02-10 | 1990-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-08-11 | 1994-02-10 | 1994-08-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-08-11 | 1998-02-10 | 1998-08-12 | $7700.00 | Window Closed / Lapsed |