Nonlinearity correction circuit for bandgap reference

Claim 2

A circuit for generating a current which is a known function of temperature, comprising a pair of first and second bipolar transistors having their bases connected across a resistance of selected value R, for providing an output current of selected form across said resistance in response to collector currents applied to the respective transistors, said collector currents being I 1 , directly proportional to temperature, and I 2 , whereby said output current across the resistance is of the form ##EQU8## where K=Boltzmann's constant T=Kelvin temperature q=electronic charge A 1 =emitter area of first transistor A 2 =emitter area of second transistor; and means for supplying said collector currents I 1 and I 2 .

Claim 3

A circuit having an output current which is of the form TlnT, comprising: first and second bipolar transistors having emitter areas of ratio (A 2 /A 1 ) and having their bases connected across a resistance of selected value R for providing, in response to respective collector current I 1 and I 2 applied thereto, a current across the resistance which is is of the form ##EQU9## the current I 1 being proportional to absolute temperature so that the output current is of the general form TlnT; and the area ratio being relatively small and the collector current ratio being selected to be relatively large at a selected operating temperature to provide a relatively large value to the ratio of non-linear and linear components of the logarithmic function.

Claim 4

A circuit having an output current which is of the form TlnT, comprising: first and second bipolar transistors having emitter areas of ratio (A 2 /A 1 ) and having their bases connected across a resistance of selected value R for providing, in response to respective collector current I 1 and I 2 applied thereto, a current across the resistance which is is of the form ##EQU9## the current I 1 being proportional to absolute temperature so that the output current is of the general form TlnT; and the area ratio being relatively small and the collector current ratio being selected to be relatively large at a selected operating temperature to provide a relatively large value to the ratio of non-linear and linear components of the logarithmic function.

Claim 5

The circuit of claim 2 further comprising a third bipolar transistor having its base and emitter connected across the collector and base of the first transistor to thereby develop a collector current in the third transistor of the said form TlnT.

Claim 6

The circuit of claim 2 further comprising a bandgap reference circuit and wherein the collector of the third transistor is connected to the bandgap reference circuit to apply the output current thereto.

Claim 7

A bandgap reference circuit having an output which is essentially a linear function of temperature, comprising: bandgap reference circuit means comprising a first pair of bipolar transistors for generating an output based upon the difference in base-emitter voltages of the transistor pair, plus the base-emitter voltage itself, and an amplifier feedback loop having an output connected in common with the base of the transistor pair and having an inverting input; first and second bipolar transistors having emitter areas of ratio (A 2 /A 1 ) and having their bases connected across a resistance of selected value R for providing, in response to respective collector current I 1 and I 2 and ratio (I 1 /I 2 ) being applied thereto, a current across the resistance which is proportional to absolute temperature, T, and is of the logarithmic form ##EQU10## the current I 1 being proportional to absolute temperature so that the logarithmic component of the output current is of the general form TlnT; the product area ratio and the collector current ratio being selected to be relatively close to unity at a selected operating temperature to provide a relatively large value to the ratio of non-linear and linear components of the current across R; and a third bipolar transistor having its base and emitter connected across the collector and base of the first transmitter to develop a collector current in the third transistor of the said form TlnT.

Claim 8

A bandgap reference circuit having an output which is essentially a linear function of temperature, comprising: bandgap reference circuit means comprising a first pair of bipolar transistors for generating an output based upon the difference in base-emitter voltages of the transistor pair, plus the base-emitter voltage itself, and an amplifier feedback loop having an output connected in common with the base of the transistor pair and having an inverting input; first and second bipolar transistors having emitter areas of ratio (A 2 /A 1 ) and having their bases connected across a resistance of selected value R for providing, in response to respective collector current I 1 and I 2 and ratio (I 1 /I 2 ) being applied thereto, a current across the resistance which is proportional to absolute temperature, T, and is of the logarithmic form ##EQU10## the current I 1 being proportional to absolute temperature so that the logarithmic component of the output current is of the general form TlnT; the product area ratio and the collector current ratio being selected to be relatively close to unity at a selected operating temperature to provide a relatively large value to the ratio of non-linear and linear components of the current across R; and a third bipolar transistor having its base and emitter connected across the collector and base of the first transmitter to develop a collector current in the third transistor of the said form TlnT.

Claim 9

The circuit of claim 5 further comprising a resistor in series with the emitter of the second transistor for controlling the effective emitter area thereof.

Claim 10

A circuit for generating a current of the form TlnT, comprising: first and second current generators for respectively generating first and second currents I 1 and I 2 , the first current being a linear function of absolute temperature, T; first and second bipolar transistors having emitter areas A 1 and A 2 and having their collectors connected at respective nodes to the first and second current generators and having their bases connected at respective nodes across a selected resistance of value R; a third bipolar transistor having its base connected to the collector node of the first transistor and its emitter connected to the base node of the first transistor for establishing an output current across the third transistor of the form C 1 Tln(C 2 T), wherein ##EQU11## and wherein the form of the output current is optimized by selecting the area ratio (A 2 /A 1 ) to be relatively small, and selecting the current ratio (I 1 /I 2 ) to be relatively large at a selected operating temperature.

Claim 11

A circuit for generating a current of the form TlnT, comprising: first and second current generators for respectively generating first and second currents I 1 and I 2 , the first current being a linear function of absolute temperature, T; first and second bipolar transistors having emitter areas A 1 and A 2 and having their collectors connected at respective nodes to the first and second current generators and having their bases connected at respective nodes across a selected resistance of value R; a third bipolar transistor having its base connected to the collector node of the first transistor and its emitter connected to the base node of the first transistor for establishing an output current across the third transistor of the form C 1 Tln(C 2 T), wherein ##EQU11## and wherein the form of the output current is optimized by selecting the area ratio (A 2 /A 1 ) to be relatively small, and selecting the current ratio (I 1 /I 2 ) to be relatively large at a selected operating temperature.

Claim 12

The circuit of claim 7 further comprising a resistor in series with the emitter of the second transistor for decreasing the effective emitter area thereof.