US4602371A
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High output semiconductor laser device utilizing a mesa-stripe optical confinement region
Assignee: Opnext Japan Inc
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Filing: 1984-01-17
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Granted: 1986-07-22
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Expires: 2004-01-17
Abstract
Abstract A semiconductor laser device is provided with an optical confinement region constituted by first, second, third and fourth semiconductor layers provided on the upper part of a predetermined semiconductor substrate in contact with each other successively. The first and fourth semiconductor layers are smaller in refractive index than the second and third semiconductor layers, and the third semiconductor layer is larger in refractive index than the second semiconductor layer. On the other hand, the second and fourth semiconductor layers are larger in forbidden bandwidth than the third semiconductor layer. At least the first and fourth semiconductor layers are opposite in conductivity type to each other. In addition to this, the optical confinement region is formed into a mesa-stripe, and both side walls of this mesa-stripe which are substantially parallel to the traveling direction of a laser beam are embedded with a fifth semiconductor layer. Also, the width of the second semiconductor layer in a section perpendicular to the traveling direction of the laser beam and in the direction parallel to a junction within the optical confinement region is made larger than that of the third semiconductor layer. Accordingly, by virtue of this structure, a large output is ensured by this semiconductor laser device.
Inventors
- 👤 Toshihiro Kawano
- 👤 Tsukuru Ohtoshi
- 👤 Naoki Chinone
- 👤 Takashi Kajimura
- 👤 Michiharu Nakamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 19:17
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/2054; H01S5/2081; H01S5/2275; H01S5/30; H01S5/32; H01S5/3211; H01S5/3213
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
234 words
A semiconductor laser device comprising: an optical confinement region comprising first, second, third and fourth semiconductor layers provided on the upper part of a predetermined semiconductor substrate in contact with each other successively, said first and fourth semiconductor layers being smaller in refractive index than said second and third semiconductor layers, said third semiconductor layer being larger in refractive index than said second semiconductor layer, said second and fourth semiconductor layers being larger in forbidden bandwidth than said third semiconductor layer, and at least said first and fourth semiconductor layers being opposite in conductivity type to each other, wherein said optical confinement region is formed into a mesa-stripe having a pair of side walls which are substantially parallel to the traveling direction of a laser beam, said side walls being embedded with a fifth semiconductor layer, said mesa-stripe being trapezoidal with a lower surface in contact with said substrate being larger than an upper surface opposite said lower surface, and wherein the width of said second semiconductor layer in a section perpendicular to the traveling direction of the laser beam and in the direction parallel to a junction within said optical confinement region is made larger than that of said third semiconductor layer at a surface of said second semiconductor layer interfacing with said third semiconductor layer; a first electrode coupled to said substrate; and a second electrode coupled to said fourth semiconductor layer.
Claim 2
Dependent Claim
234 words
A semiconductor laser device comprising: an optical confinement region comprising first, second, third and fourth semiconductor layers provided on the upper part of a predetermined semiconductor substrate in contact with each other successively, said first and fourth semiconductor layers being smaller in refractive index than said second and third semiconductor layers, said third semiconductor layer being larger in refractive index than said second semiconductor layer, said second and fourth semiconductor layers being larger in forbidden bandwidth than said third semiconductor layer, and at least said first and fourth semiconductor layers being opposite in conductivity type to each other, wherein said optical confinement region is formed into a mesa-stripe having a pair of side walls which are substantially parallel to the traveling direction of a laser beam, said side walls being embedded with a fifth semiconductor layer, said mesa-stripe being trapezoidal with a lower surface in contact with said substrate being larger than an upper surface opposite said lower surface, and wherein the width of said second semiconductor layer in a section perpendicular to the traveling direction of the laser beam and in the direction parallel to a junction within said optical confinement region is made larger than that of said third semiconductor layer at a surface of said second semiconductor layer interfacing with said third semiconductor layer; a first electrode coupled to said substrate; and a second electrode coupled to said fourth semiconductor layer.
Claim 3
Dependent Claim
59 words
A semiconductor laser device according to claim 1, wherein, in a section taken along a plane parallel to the traveling direction of the laser beam, end portions of said second semiconductor layer extend to corresponding reflecting end surfaces of said optical confinement region, while end portions of said first semiconductor layer do not extend to the corresponding reflecting surfaces.
Claim 4
Dependent Claim
67 words
A semiconductor laser device according to claim 1, wherein said third and fourth semiconductor layers are substantially equal in width to each other at the interface therebetween, and the width of said fourth semiconductor layer at the surface thereof in contact with said third semiconductor layer is smaller than the width of said fourth semiconductor layer at the surface thereof opposite to the surface at said interface.
Claim 5
Dependent Claim
24 words
A semiconductor laser device according to claim 1, wherein said semiconductor layer embedding the side walls of said optical confinement region reaches said substrate.
Claim 6
Dependent Claim
48 words
A semiconductor laser device according to claim 3, wherein said second semiconductor layer extends to end surfaces of the laminated semiconductor layers, and at least one of end surfaces of said third semiconductor layer is on the inside of the corresponding end surface of said laminated semiconductor layers.
Claim 7
Dependent Claim
29 words
A semiconductor laser device according to claim 1, wherein a semiconductor layer is further laminated on said fourth semiconductor layer between said fourth semiconductor layer and said second electrode.
Claim 8
Dependent Claim
29 words
A semiconductor laser device according to claim 2, wherein a semiconductor layer is further laminated on said fourth semiconductor layer between said fourth semiconductor layer and said second electrode.
Claim 9
Dependent Claim
29 words
A semiconductor laser device according to claim 3, wherein a semiconductor layer is further laminated on said fourth semiconductor layer between said fourth semiconductor layer and said second electrode.
Claim 10
Dependent Claim
29 words
A semiconductor laser device according to claim 4, wherein a semiconductor layer is further laminated on said fourth semiconductor layer between said fourth semiconductor layer and said second electrode.
Claim 11
Dependent Claim
29 words
A semiconductor laser device according to claim 5, wherein a semiconductor layer is further laminated on said fourth semiconductor layer between said fourth semiconductor layer and said second electrode.
Claim 12
Dependent Claim
28 words
A semiconductor laser device according to claim 1, wherein the refractive index of said first semiconductor layer is different than the refractive index of said fourth semiconductor layer.
Claim 13
Dependent Claim
28 words
A semiconductor laser device according to claim 11, wherein the refractive index of said fourth semiconductor layer is greater than the refractive index of said first semiconductor layer.
Claim 14
Dependent Claim
29 words
A semiconductor laser device according to claim 11, wherein a refractive index difference between said first and fourth semiconductor layers is in a range between 0.01 and 0.20 inclusive.
Claim 15
Dependent Claim
29 words
A semiconductor laser device according to claim 12, wherein a refractive index difference between said first and fourth semiconductor layers is in a range between 0.01 and 0.20 inclusive.
Claim 16
Dependent Claim
22 words
A semiconductor laser device according to claim 1, wherein the refractive index of said first and fourth semiconductor layers is substantially identical.
Claim 17
Dependent Claim
47 words
A semiconductor laser device according to claim 1, wherein said first semiconductor layer is an n-conductivity cladding layer, said second semiconductor layer is an n-conductivity optical guiding layer, said third semiconductor layer is an undoped active layer and said fourth semiconductor layer is a p-conductivity cladding layer.
Claim 18
Dependent Claim
25 words
A semiconductor laser device according to claim 16, wherein said n-conductivity cladding layer and said p-conductivity cladding layer have different refractive indexes from one another.
Claim 19
Dependent Claim
13 words
A semiconductor laser device according to claim 16, wherein said substrate is n-conductivity.
Claim 20
Dependent Claim
13 words
A semiconductor laser device according to claim 17, wherein said substrate is n-conductivity.
Claim 21
Dependent Claim
248 words
A semiconductor laser device comprising: an optical confinement region comprising first, second, third and fourth semiconductor layers provided on the upper part of a predetermined semiconductor substrate in contact with each other successively, said first and fourth semiconductor layers being smaller in refractive index than said second and third semiconductor layers, said third semiconductor layer being larger in refractive index than said second semiconductor layer, said second and fourth semiconductor layers being larger in forbidden bandwidth than said third semiconductor layer, and at least said first and fourth semiconductor layers being opposite in conductivity type to each other, wherein said optical confinement region is formed into a mesa-stripe having a pair of side walls which are substantially parallel to the traveling direction of a laser beam, said side walls being embedded with a fifth semiconductor layer, and wherein the width of said second semiconductor layer in a section perpendicular to the traveling direction of the laser beam and in the direction parallel to a junction within said optical confinement region is made larger than that of said third semiconductor layer; a first electrode coupled to said substrate; and a second electrode coupled to said fourth semiconductor layer, wherein, in a section taken along a plane parallel to the traveling direction of the laser beam, end portions of said second semiconductor layer extend to corresponding reflecting end surfaces of said optical confinement region, while end portions of said first semiconductor layer do not extend to the corresponding reflecting surfaces.
Claim 22
Dependent Claim
248 words
A semiconductor laser device comprising: an optical confinement region comprising first, second, third and fourth semiconductor layers provided on the upper part of a predetermined semiconductor substrate in contact with each other successively, said first and fourth semiconductor layers being smaller in refractive index than said second and third semiconductor layers, said third semiconductor layer being larger in refractive index than said second semiconductor layer, said second and fourth semiconductor layers being larger in forbidden bandwidth than said third semiconductor layer, and at least said first and fourth semiconductor layers being opposite in conductivity type to each other, wherein said optical confinement region is formed into a mesa-stripe having a pair of side walls which are substantially parallel to the traveling direction of a laser beam, said side walls being embedded with a fifth semiconductor layer, and wherein the width of said second semiconductor layer in a section perpendicular to the traveling direction of the laser beam and in the direction parallel to a junction within said optical confinement region is made larger than that of said third semiconductor layer; a first electrode coupled to said substrate; and a second electrode coupled to said fourth semiconductor layer, wherein, in a section taken along a plane parallel to the traveling direction of the laser beam, end portions of said second semiconductor layer extend to corresponding reflecting end surfaces of said optical confinement region, while end portions of said first semiconductor layer do not extend to the corresponding reflecting surfaces.
Claim 23
Dependent Claim
247 words
A semiconductor laser device comprising: an optical confinement region comprising first, second, third and fourth semiconductor layers provided on the upper part of a predetermined semiconductor substrate in contact with each other successively, said first and fourth semiconductor layers being smaller in refractive index than said second and third semiconductor layers, said third semiconductor layer being larger in refractive index than said second semiconductor layer, said second and fourth semiconductor layers being larger in forbidden bandwidth than said third semiconductor layer, and at least said first and fourth semiconductor layers being opposite in conductivity type to each other, wherein said optical confinement region is formed into a mesa-stripe having a pair of side walls which are substantially parallel to the traveling direction of a laser beam, said side walls being embedded with a fifth semiconductor layer in a section perpendicular to the traveling direction of the laser beam and in the direction parallel to a junction within said optical confinement region is made larger than that of said third semiconductor layer; a first electrode coupled to said substrate; and a second electrode coupled to said fourth semiconductor layer, wherein, said third and fourth semiconductor layers are substantially equal in width to each other at the interface therebetween, and the width of said fourth semiconductor layer at the surface thereof in contact with said third semiconductor layer is smaller than the width of said fourth semiconductor layer at the surface thereof opposite to the surface at said interface.
Claim 24
Dependent Claim
247 words
A semiconductor laser device comprising: an optical confinement region comprising first, second, third and fourth semiconductor layers provided on the upper part of a predetermined semiconductor substrate in contact with each other successively, said first and fourth semiconductor layers being smaller in refractive index than said second and third semiconductor layers, said third semiconductor layer being larger in refractive index than said second semiconductor layer, said second and fourth semiconductor layers being larger in forbidden bandwidth than said third semiconductor layer, and at least said first and fourth semiconductor layers being opposite in conductivity type to each other, wherein said optical confinement region is formed into a mesa-stripe having a pair of side walls which are substantially parallel to the traveling direction of a laser beam, said side walls being embedded with a fifth semiconductor layer in a section perpendicular to the traveling direction of the laser beam and in the direction parallel to a junction within said optical confinement region is made larger than that of said third semiconductor layer; a first electrode coupled to said substrate; and a second electrode coupled to said fourth semiconductor layer, wherein, said third and fourth semiconductor layers are substantially equal in width to each other at the interface therebetween, and the width of said fourth semiconductor layer at the surface thereof in contact with said third semiconductor layer is smaller than the width of said fourth semiconductor layer at the surface thereof opposite to the surface at said interface.
Claim 25
Dependent Claim
48 words
A semiconductor laser device according to claim 21, wherein said second semiconductor layer extends to end surfaces of the laminated semiconductor layers, and at least one of end surfaces of said third semiconductor layer is on the inside of the corresponding end surface of said laminated semiconductor layers.
Claim 26
Dependent Claim
29 words
A semiconductor laser device according to claim 22, wherein a semiconductor layer is further laminated on said fourth semiconductor layer between said fourth semiconductor layer and said second electrode.
Claim 27
Dependent Claim
230 words
A semiconductor laser device comprising: an optical confinement region comprising first, second, third and fourth semiconductor layers provided on the upper part of a predetermined semiconductor substrate in contact with each other successively, said first and fourth semiconductor layers being smaller in refractive index than said second and third semiconductor layers, said third semiconductor layer being larger in refractive index than said second semiconductor layer, said second and fourth semiconductor layers being larger in forbidden bandwidth than said third semiconductor layer, and at least said first and fourth semiconductor layers being opposite in conductivity type to each other, wherein said optical confinement region is formed into a mesa-stripe having a pair of side walls which are substantially parallel to the traveling direction of a laser beam, said side walls being embedded with a fifth semiconductor layer in a section perpendicular to the traveling direction of the laser beam and in the direction parallel to a junction within said optical confinement region is made larger than that of said third semiconductor layer; a first electrode coupled to said substrate; and a second electrode coupled to said fourth semiconductor layer, wherein, the refractive index of said fourth semiconductor layer is greater than the refractive index of said first semiconductor layer, and wherein, a refractive index difference between said first and fourth semiconductor layers is in a range between 0.01 and 0.20 inclusive.
Claim 28
Dependent Claim
230 words
A semiconductor laser device comprising: an optical confinement region comprising first, second, third and fourth semiconductor layers provided on the upper part of a predetermined semiconductor substrate in contact with each other successively, said first and fourth semiconductor layers being smaller in refractive index than said second and third semiconductor layers, said third semiconductor layer being larger in refractive index than said second semiconductor layer, said second and fourth semiconductor layers being larger in forbidden bandwidth than said third semiconductor layer, and at least said first and fourth semiconductor layers being opposite in conductivity type to each other, wherein said optical confinement region is formed into a mesa-stripe having a pair of side walls which are substantially parallel to the traveling direction of a laser beam, said side walls being embedded with a fifth semiconductor layer in a section perpendicular to the traveling direction of the laser beam and in the direction parallel to a junction within said optical confinement region is made larger than that of said third semiconductor layer; a first electrode coupled to said substrate; and a second electrode coupled to said fourth semiconductor layer, wherein, the refractive index of said fourth semiconductor layer is greater than the refractive index of said first semiconductor layer, and wherein, a refractive index difference between said first and fourth semiconductor layers is in a range between 0.01 and 0.20 inclusive.
References Cited (Backward Citations)
US4315226A
Cited
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