Gate array with reduced isolation

Claim 1

An integrated circuit gate array comprising a semiconductor substrate, a set of active-area columns of active areas formed within said substrate comprising P and N-Channel active regions between conductive means for supplying power supply voltages at ground and at a predetermined voltage, the members of said set of active-area columns being separated by a set of inter-column routing channels extending along and between neighboring columns, a set of gate pairs positioned above said P and N-Channel regions of said active-area columns, the gates of said gate pairs being adapted to form with said active areas a plurality of field effect transistors; and means for interconnecting said plurality of field effect transistors to form an integrated circuit comprising a predetermined set of subcircuits separated from one another by selected subcircuit isolation means, which means for interconnecting comprises: a predetermined set of electrical substrate contacts extending, from selected contact positions within a set of permitted contact positions in said substrate, away from said substrate; a set of first-level interconnections formed from conductive material and being routed in predetermined routing paths to make electrical contact with at least some of said predetermined set of electrical substrate contacts, whereby electrical connections to said substrate are made by at least some of said first-level interconnections; a set of second-level interconnections disposed in predetermined routing paths for interconnecting selected components of said integrated circuit; and a set of vias for connecting selected points on selected ones of said second-level interconnections to selected points in a level below said second-level interconnections, said vias being located at selected via positions within a set of permitted via locations, in which integrated circuit; at least one pair of first and second neighboring subcircuits extending along one of said set of active-area columns are separated by subcircuit isolation means comprising a predetermined pair of isolation regions of one of said active-area columns, said pair of isolation regions being formed by connecting said predetermined isolation regions to respective power supply means, thereby rendering said isolation region insensitive to electrical signals at neighboring points in said active area, whereby that gate of said first neighboring subcircuit closest to each of said predetermined isolation regions is the gate of a transistor having one terminal at the fixed potential of said power supply means and those corresponding gates of said second neighboring subcircuit closest to said predetermined isolation regions are also a component of a transistor having one terminal at the fixed potential of said power supply means, both of said terminals of said closest transistors being formed in said predetermined isolation region, whereby said gates closest to said isolation region have no inactive blocking gates between them.