US4597085A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Double-channel planar heterostructure semiconductor laser
Assignee: NEC Corp
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Filing: 1983-09-15
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Granted: 1986-06-24
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Expires: 2003-09-15
Abstract
Abstract A double-channel planar buried-heterostructure semiconductor laser diode (DC-PBH LD) has improved high frequency response characteristics due to lower p-n junction capacitance resulting from the interposition of a low carrier concentration blocking layer between p-n-p-n blocking layers of the DC-PBH LD structure.
Inventors
- 👤 Ikuo Mito
- 👤 Kohroh Kobayashi
- 👤 Tetsuhiko Ikegami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:00
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/06; H01S5/062; H01S5/06209; H01S5/06213; H01S5/2275; H01S5/2277
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
294 words
A semiconductor laser having a buried double-heterostructure, comprising: a semiconductor substrate of a first conductivity type; a multi-layer double heterostructure including successively at least a first cladding semiconductor layer of said first conductivity type, an active semiconductor layer, and a second cladding semiconductor layer of a second conductivity type, said active semiconductor layer having a narrower bandgap than those of said first and second cladding semiconductor layers, said multi-layer double heterostructure having a stripe portion with channels which are formed along both sides of said strip portion and extedd through said second cladding semiconductor layer and active semiconductor layer to reach said first cladding layer, having remaining portions, outside said channels, including said first cladding, said active, and second cladding semiconductor layers; a current blocking layer formed on said channels and said remaining portions of said multi-layer double-heterostructure except for a top surface of said stripe portion, for blocking a current therethrough, said current blocking layer including a first blocking semiconductor layer of said second conductivity type and a second blocking semiconductor layer of said first conductivity type, said current blocking layer including a further semiconductor layer interposed between said first and second blocking semiconductor layers and extending along said first and second semiconductor layers over said channels and said remaining portions and having a smaller carrier concentration than that of each of the first and second blocking semiconductor layers; a burying semiconductor layer of said second conductivity type which is grown to bury said top surface of said stripe portion and said current blocking layer; resonant means for feeding light back in the opposite directions of the length of said stripe portion and parallel to said active semiconductor layer; and a pair of electrodes for supplying a voltage to bias said semiconductor laser.
Claim 2
Dependent Claim
294 words
A semiconductor laser having a buried double-heterostructure, comprising: a semiconductor substrate of a first conductivity type; a multi-layer double heterostructure including successively at least a first cladding semiconductor layer of said first conductivity type, an active semiconductor layer, and a second cladding semiconductor layer of a second conductivity type, said active semiconductor layer having a narrower bandgap than those of said first and second cladding semiconductor layers, said multi-layer double heterostructure having a stripe portion with channels which are formed along both sides of said strip portion and extedd through said second cladding semiconductor layer and active semiconductor layer to reach said first cladding layer, having remaining portions, outside said channels, including said first cladding, said active, and second cladding semiconductor layers; a current blocking layer formed on said channels and said remaining portions of said multi-layer double-heterostructure except for a top surface of said stripe portion, for blocking a current therethrough, said current blocking layer including a first blocking semiconductor layer of said second conductivity type and a second blocking semiconductor layer of said first conductivity type, said current blocking layer including a further semiconductor layer interposed between said first and second blocking semiconductor layers and extending along said first and second semiconductor layers over said channels and said remaining portions and having a smaller carrier concentration than that of each of the first and second blocking semiconductor layers; a burying semiconductor layer of said second conductivity type which is grown to bury said top surface of said stripe portion and said current blocking layer; resonant means for feeding light back in the opposite directions of the length of said stripe portion and parallel to said active semiconductor layer; and a pair of electrodes for supplying a voltage to bias said semiconductor laser.
Claim 3
Dependent Claim
26 words
The semiconductor laser as set forth in claim 1, wherein the carrier concentration of said further semiconductor layer is less than 5×10 17 cm -3 .
Claim 4
Dependent Claim
22 words
The semiconductor laser as set forth in claim 1, wherein said further semiconductor layer is a non-doped layer formed by epitaxial growth.
References Cited (Backward Citations)
US4425650A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-06-23 | 1989-12-23 | 1990-06-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-06-23 | 1993-12-23 | 1994-06-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-06-23 | 1997-12-23 | 1998-06-24 | $7700.00 | Window Closed / Lapsed |