US4596716A
Expired / Lapsed
US
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Porous silicon nitride semiconductor dopant carriers
Assignee: Stemcor Corp
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Filing: 1983-06-08
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Granted: 1986-06-24
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Expires: 2003-06-08
Abstract
Abstract New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapor phase transport of an n or p type dopants, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tellurium, tin and cadmium to the semiconductor host substrate; wherein the dopant source comprises a dopant containing porous, inert, rigid dimensionally stable and thermal shock resistant reaction sintered Si 3 N 4 carrier material.
Inventors
- 👤 Gabriel P. DeMunda
- 👤 Richard E. Tressler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:27
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/06; C30B31/16; C30B31/165; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
107 words
The method of forming a vapor deposition dopant source comprising providing a dopant carrier comprised of reaction sintered Si 3 N 4 and up to about 70% elemental Si, wherein the compound is formed by heating a wafer-shaped body comprising particulate elemental silicon and a binder to a sintering temperature between about 1000° and 1800° C. in a nitrogen atmosphere, said dopant carriers structurally characterized by a solid, porous refractory matrix having interparticulate Si 3 N 4 bonding, and applying to the dopant carrier a dopant containing an element selected from the group consisting of phosphorous, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tellurium, tin and cadmium.
Claim 2
Independent Claim
107 words
The method of forming a vapor deposition dopant source comprising providing a dopant carrier comprised of reaction sintered Si 3 N 4 and up to about 70% elemental Si, wherein the compound is formed by heating a wafer-shaped body comprising particulate elemental silicon and a binder to a sintering temperature between about 1000° and 1800° C. in a nitrogen atmosphere, said dopant carriers structurally characterized by a solid, porous refractory matrix having interparticulate Si 3 N 4 bonding, and applying to the dopant carrier a dopant containing an element selected from the group consisting of phosphorous, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tellurium, tin and cadmium.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein said dopant is present in the pores of said porous refractory matrix.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-06-23 | 1989-12-23 | 1990-06-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-06-23 | 1993-12-23 | 1994-06-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-06-23 | 1997-12-23 | 1998-06-24 | $7700.00 | Window Closed / Lapsed |