Photoelectric conversion device

Claim 1

A photoelectric conversion device which is provided with a plurality of series-connected semiconductor transducers U 1 , U 2 , . . . , comprising: (a) a substrate having an insulating surface; (b) a plurality of spaced apart first electrodes E l , E 2 , . . . , formed side by side on the substrate; (c) a non-single-crystal semiconductor laminate member formed on the substrate to cover the first electrodes E 1 , E 2 , . . . ; and (d) a plurality of second electrodes F 1 , F 2 , . . . formed on the non-single-crystal semiconductor laminate member in opposing relation to the first electrodes E 1 , E 2 , . . . , respectively; wherein: the semiconductor transducer U i (where i+1, 2, . . . ) is constituted by first electrode E i , a second electrode F i , and a region Q i of the non-single-crystal semiconductor laminate member which is sandwiched between the first and second electrodes E i and F i , the second electrode F i is connected to the first electrode E i+1 of an adjacent semiconductor transducer U i+1 through a contact portion K i (i+1) ; each of the plurality of first electrodes E 1 , E 2 , . . . is respectively isolated from adjacent ones by a plurality of first isolation grooves G 12 , G 23 , . . . sequentially arranged along the direction of arrangement of the first electrodes; the non-single-crystal laminate member extends into the plurality of first isolation grooves G 12 , G 23 , . . . each of the plurality of second electrodes F 1 , F 2 , . . . is respectively isolated from adjacent ones by a plurality of second isolation grooves H 12 , H 23 , . . . sequentially arranged along the direction of arrangement of the second electrodes; the second isolation groove H i (i+1) extends in opposing relation to a region of the first electrode E i+1 on the side of the isolation groove G i (i+1), and thereby, the second electrode F i is opposite a region of the first electrode E i+1 on the side of the isolation groove G i (i+1) ; in the region of the non-single-crystal semiconductor laminate member across from which the second electrode F i is opposite the first electrode E i+1 , there is cut a contact groove O i (i+1) which extends between the second electrode F 1 and the first electrode E i+1 ; the second electrode F i extends, as the contact portion K i (i+1), through the contact groove O i (i+1) to reach the first electrode E i+1 ; the side walls of at least the first electrode E i of the semiconductor transducer U i , which extends along the longitudinal direction of arrangement of the semiconductor transducers U i , U 2 , . . . lie at a distance inside the walls of the substrate; and the side walls of the semiconductor transducer U i , in said longitudinal direction, are substantially co-extensive with said side walls of the substrate.